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Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses

  • US 6,291,298 B1
  • Filed: 05/25/1999
  • Issued: 09/18/2001
  • Est. Priority Date: 05/25/1999
  • Status: Expired due to Term
First Claim
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1. A process of manufacturing a trench gate semiconductor device comprising:

  • providing a semiconductor material;

    forming a trench at a surface of the semiconductor material;

    placing the semiconductor material in a reaction chamber;

    producing charged particles of a dielectric within the chamber;

    creating an electric field in the reaction chamber, the electric field causing the charged particles to move towards the semiconductor material such that the dielectric is deposited at a greater thickness on a bottom of the trench than on a sidewall of the trench;

    depositing a conductive material in the trench to form a gate electrode; and

    removing the dielectric from the sidewall of the trench.

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