Method and device for controlled cleaving process
First Claim
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1. A process for forming a film of material from substrates, said process comprising:
- forming a stressed region at a selected depth underneath a surface of a substrate, said stressed region at said selected depth to define a substrate material to be removed above said selected depth; and
providing energy using a fluid to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.
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Abstract
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
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Citations
27 Claims
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1. A process for forming a film of material from substrates, said process comprising:
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forming a stressed region at a selected depth underneath a surface of a substrate, said stressed region at said selected depth to define a substrate material to be removed above said selected depth; and
providing energy using a fluid to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A process for forming a multilayered substrate, said process comprising.
providing a multilayered substrate, said substrate comprising a substrate portion having a stressed region at a selected depth to define a substrate material to be removed above said selected depth; - and
providing a fluid to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate. - View Dependent Claims (18, 19, 20)
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21. A process for forming a film of material from substrates, said process comprising:
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providing a bulk substrate comprising an upper surface;
forming a first compressive layer overlying the upper surface;
forming a tensile layer overlying the first compressive layer;
forming a second compressive layer overlying the tensile layer;
forming a material layer overlying the second compressive layer; and
providing energy to a selected region of the tensile layer to initiate a controlled cleaving action at the tensile layer, whereupon the cleaving action is made using a propagating cleave front to free the material layer from the bulk substrate. - View Dependent Claims (22, 23, 24, 25)
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26. A process for forming a film of material from substrates, said process comprising:
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providing a bulk substrate comprising an upper surface;
forming a cleaving layer overlying the upper surface;
forming a material layer overlying the cleaving layer; and
providing energy to a selected region of the cleaving layer to initiate a controlled cleaving action at the cleaving layer, whereupon the cleaving action is made using a propagating cleave front to free the material layer from the bulk substrate. - View Dependent Claims (27)
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Specification