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Method of operating a programmable, non-volatile memory device

  • US 6,291,836 B1
  • Filed: 05/30/1997
  • Issued: 09/18/2001
  • Est. Priority Date: 06/05/1996
  • Status: Expired due to Term
First Claim
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1. A method of operating a programmable, non-volatile memory device (PROM) comprising a system of programmable non-volatile memory cells arranged in a matrix of rows and columns and provided with a first set of selection lines parallel to the columns and with a second set of selection lines parallel to the rows, a memory cell being associated with each point of intersection between the selection lines, wherein each memory cell consists of only a single-element cell exclusively formed by a diode whose anode and cathode are each conductively connected to a selection line of a different set, at least one of the anode and cathode regions comprising a layer of hydrogenated, silicon-containing amorphous semiconductor material, each memory cell being operated by repeatably bringing said memory cell to a resettable lower conductivity state in response to a current pulse and repeatably bringing said memory cell to a resettable higher conductivity state in response to a heat application.

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