Zirconium and/or hafnium silicon-oxynitride gate dielectric
First Claim
1. An integrated circuit having a field effect device fabricated thereon, the field effect device comprising:
- a single-crystal silicon semiconducting channel region;
a metal silicon-oxynitride gate dielectric overlying the channel region where the metal is selected from the group of hafnium, zirconium, and mixtures thereof; and
a conductive gate overlying the gate dielectric.
0 Assignments
0 Petitions
Accused Products
Abstract
A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium silicon-oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium silicon-oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide. However, the zirconium silicon-oxynitride gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability.
-
Citations
16 Claims
-
1. An integrated circuit having a field effect device fabricated thereon, the field effect device comprising:
-
a single-crystal silicon semiconducting channel region;
a metal silicon-oxynitride gate dielectric overlying the channel region where the metal is selected from the group of hafnium, zirconium, and mixtures thereof; and
a conductive gate overlying the gate dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
-
Specification