Three-dimensional type inductor for mixed mode radio frequency device

• US 6,291,872 B1
• Filed: 11/04/1999
• Issued: 09/18/2001
• Est. Priority Date: 11/04/1999
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wu, Jun, Wang, Ying-Lang, Dun, Jowei, Lin, Hway-Chi
• Primary Examiner(s): CRANE, SARA W
• Application Number:
  US09/433,255
• Time in Patent Office: 684 Days
• Field of Search: 257/531, 257/752
• US Class Current: 257/531
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 28/10 Inductors

Abstract

Vertical type structures for integrated circuit inductors are disclosed. These vertical type inductors include the single-loop type, the parallel-loop type and the screw type, which form three different embodiments in the present invention. In the first embodiment, three-dimensional type structures, a single-loop type is utilized as an integrated circuit inductor. This inductor structure is formed on a substrate and the axis of the structure is upright to the substrate. In another embodiment according to the present invention, a parallel-loop type structure for radio frequency (RF) integrated circuit inductor is provided. A screw type structure according to this invention is the third embodiment. It features an axis that is parallel to the surface of the substrate and threads into the semiconductor device.

Claims

1. A single loop type inductor for mixed mode radio frequency (RF) devices comprising:

a rectangular spiral structure having an outer end and an inner end, said rectangular spiral structure further comprises a plurality of insulating layers, a plurality of vertical direction contacts and a plurality of horizontal direction contacts,

every horizontal direction contact is formed within different insulating layer by dual damascene process, and

every vertical direction contact is also formed by dual damascene process but through at least one insulating layer and connected to two horizontal direction contacts.

2. The inductor according to claim 1, wherein said plurality of vertical direction contacts have different lengths, the inner the shorter, and are placed at equal intervals.

3. The inductor according to claim 1, wherein said plurality of horizontal direction contacts have different lengths, the inner the shorter, and are placed at equal intervals.

4. The inductor according to claim 1, wherein said outer end is one of said plurality of vertical direction contacts, which is connected to one horizontal direction contact and to a source/drain region.

5. The inductor according to claim 1, wherein said inner end is one of said plurality of horizontal direction contacts, which is connected to one vertical direction contact only.

6. The inductor according to claim 1, wherein said inner end is one of said plurality of vertical direction contacts, which is connected to one horizontal direction contact only.

7. The inductor according to claim 1, wherein the material used for said contacts comprises copper metal.

8. The inductor according to claim 1, wherein the material used for said contacts comprises copper-aluminium metal.

9. The inductor according to claim 1, wherein said insulating layers are inter-metal dielectric layers and the material used for said insulating layers comprises silicon dioxide.

10. A parallel loop type inductor for mixed mode radio frequency (RF) devices comprising:

at least two single loop type inductors, each of said single loop type inductors including,

a rectangular spiral structure having an outer end and an inner end, said rectangular spiral structure further comprises a plurality of insulating layers, a plurality of vertical direction contacts and a plurality of horizontal direction contacts,

every horizontal direction contact is formed within different insulating layer by dual damascene process, and

every vertical direction contact is also formed by dual damascene process but through at least one insulating layer and connected to two horizontal direction contacts;

the outer end of a first single loop type inductor is connected to a source/drain region, and the inner end of said first single loop type inductor is connected to the inner end of a second single loop type inductor, thereafter the inner end connects to the inner end and the outer end connects to the outer end.

11. The inductor according to claim 10, wherein said plurality of vertical direction contacts have different lengths, the inner the shorter, and are placed at equal intervals.

12. The inductor according to claim 10, wherein said plurality of horizontal direction contacts have different lengths, the inner the shorter, and are placed at equal intervals.

13. The inductor according to claim 10, wherein said single loop type inductor s are placed side by side with equal intervals.

14. The inductor according to claim 10, wherein said outer end is one of said plurality of vertical direction contacts, which is connected to either said source/drain region or the outer end of another single loop type inductor.

15. The inductor according to claim 10, wherein said inner end is one of said plurality of horizontal direction contacts, which is connected to the inner end of another single loop type inductor.

16. The inductor according to claim 10, wherein said inner end is one of said plurality of vertical direction contacts, which is connected to the inner end of another single loop type inductor.

17. The inductor according to claim 10, wherein the material used for said contacts comprises copper metal.

18. The inductor according to claim 10, wherein the material used for said contacts comprises copper-aluminium metal.

19. The inductor according to claim 10, wherein said insulating layers are inter-metal dielectric layers and the material used for said insulating layers comprises silicon dioxide.