Structures for temperature sensors and infrared detectors

• US 6,292,089 B1
• Filed: 07/10/1998
• Issued: 09/18/2001
• Est. Priority Date: 01/11/1996
• Status: Expired due to Term

• Current Assignee: Acreo AB
• Original Assignee: IMC Industriellt Mikroelektronikcentrum AB
• Inventors: Andersson, Jan
• Primary Examiner(s): Easthom, Karl D.
• Application Number:
  US09/101,597
• Time in Patent Office: 1,166 Days
• Field of Search: 338/15, 338/18, 338/17, 338/25, 338/225.D, 374/32, 257/9, 257/14, 257/15, 257/21, 257/22, 257/184, 250/338.4
• US Class Current: 338/25
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence
• CPC Class Codes: G01K 7/22 the element being a non-linear resistance, e.g. thermistor G01K7/26 takes precedence
• CPC Class Codes: H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Abstract

A structure for temperature sensors and infrared detectors. The structure is built-up on a substrate that includes a thermistor layer, wherein the resistance of the thermistor layer is temperature dependent. The substrate also includes an electric contact layer on both sides of the thermistor layer, and the resistance of the thermistor layer is measured between the contact layers. The thermistor layer includes a monocrystalline quantum well structure that includes alternating quantum well layers and barrier layers. One or more of the bandedge energy of the barrier layers, the quantum well layer doping level, the quantum well layer thickness, and the barrier layer thickness is adapted to obtain a temperature coefficient predetermined for the structure.

Claims

1. A temperature sensing structure comprising:

a. a substrate;

b. a thermistor layer carried by the substrate and having a resistance that is inversely related to temperature, the thermistor layer including a monocrystalline quantum well structure that includes alternating quantum well layers and barrier layers;

c. a first electric contact layer on a first face of the thermistor layer; and

d. a second electric contact layer on a second face of the thermistor layer, wherein the thermistor layer has a resistance that is measured between the fast and second electric contact layers, and wherein a parameter selected from the group consisting of barrier layer band-edge energy, doping level of the quantum well layers, quantum well leyer thickness, barrier layer thickness, and combinations thereof is selected to obtain a temperature coefficient for the structure that is at least 4.0% at room temperature.

2. A structure according to claim 1, wherein the substrate includes a sheet of gallium arsenide;

and wherein the quantum well layers include n-doped gallium arsenide and the barrier layers include undoped aluminum gallium arsenide.

3. A structure according to claim 1, wherein the substrate includes a silicon sheet;

and wherein the quantum well layers include p-doped silicon-germanium and the barrier layers include undoped silicon.

4. A structure according to claim 1, wherein the substrate includes a sheet of gallium arsenide;

and wherein the quantum well layers include n-doped indium gallium arsenide and the barrier layers include undoped aluminum gallium arsenide.

5. A structure according to claim 1, wherein the substrate includes a sheet of monocrystalline aluminum oxide, and wherein the quantum well layers include n-doped gallium nitride and the barrier layers include undoped aluminum gallium nitride.

6. A structure according to claim 1 for measuring the temperature of a material with which the substrate is intended to be in heat-conductive contact, wherein the first electric contact layer is provided on top of the substrate, and a quantum layer structure is provided on top of at least a part of said first contact layer, and the second electric contact layer is provided on top of the quantum well structure;

and a first metallic contact is provided on a portion of an upper surface of the first electric contact layer to one side of the quantum well structure, and a second metallic contact is provided on a portion of an upper surface of the second electric contact layer.

7. A structure according to claim 6, including at least two quantum well structures, each of which includes quantum well layers and intermediate barrier layers, wherein the quantum well structures have mutually different activation energies and are carried on one and the same substrate.

8. A structure according to claim 7, wherein the first electric contact layer is provided on a surface of the substrate and a first quantum well structure having a first activation energy is provided on top of the first contact layer;

at least one successive second quantum well structure overlies the first quantum well structure, each quantum well structure having an individual activation energy, wherein each quantum well structure is separated from an adjacent quantum well structure by an electric contact layer; and

an upper electric contact layer is provided on the uppermost surface of the uppermost quantum well structure; and

wherein the structure is etched so as to expose portions of said intermediate contact layers, said pair of contact layers being connected to respective electric contacts.

9. A structure according to claim 1 for measuring incident IR-radiation, wherein the structure includes a support member adjacent to the substrate and the quantum well structure is positioned on top of said support member, wherein the first electric contact layer is provided beneath the quantum well structure and the second electric contact layer is provided on top of the quantum well structure;

and legs positioned between the support member and the substrate to support the support member in substantially parallel and spaced relationship with a surface of the substrate.

10. A structure according to claim 9, including at least two quantum well structures, each of which includes quantum well layers and intermediate barrier layers, wherein the quantum well structures have mutually different activation energies and are carried on one and the same substrate.

11. A structure according to claim 1 for measuring incident IR-radiation, wherein a support member is positioned between the substrate and the quantum well structure;

the first electric contact layer is positioned below the quantum well structure and the second electric contact layer is positioned above the quantum well structure;

wherein the support member is substantially parallel with a surface of the substrate and is connected mechanically with the substrate by legs extending between the support member and the substrate, said legs being parallel with the substrate surface; and

a cavity formed in the substrate and which extends between said legs and below the quantum well structure.

12. A structure according to claim 11, including at least two quantum well structures, each of which includes quantum well layers and intermediate barrier layers, wherein the quantum well structures have mutually different activation energies and are carried on one and the same substrate.