Structures for temperature sensors and infrared detectors
First Claim
1. A temperature sensing structure comprising:
- a. a substrate;
b. a thermistor layer carried by the substrate and having a resistance that is inversely related to temperature, the thermistor layer including a monocrystalline quantum well structure that includes alternating quantum well layers and barrier layers;
c. a first electric contact layer on a first face of the thermistor layer; and
d. a second electric contact layer on a second face of the thermistor layer, wherein the thermistor layer has a resistance that is measured between the fast and second electric contact layers, and wherein a parameter selected from the group consisting of barrier layer band-edge energy, doping level of the quantum well layers, quantum well leyer thickness, barrier layer thickness, and combinations thereof is selected to obtain a temperature coefficient for the structure that is at least 4.0% at room temperature.
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Abstract
A structure for temperature sensors and infrared detectors. The structure is built-up on a substrate that includes a thermistor layer, wherein the resistance of the thermistor layer is temperature dependent. The substrate also includes an electric contact layer on both sides of the thermistor layer, and the resistance of the thermistor layer is measured between the contact layers. The thermistor layer includes a monocrystalline quantum well structure that includes alternating quantum well layers and barrier layers. One or more of the bandedge energy of the barrier layers, the quantum well layer doping level, the quantum well layer thickness, and the barrier layer thickness is adapted to obtain a temperature coefficient predetermined for the structure.
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Citations
12 Claims
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1. A temperature sensing structure comprising:
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a. a substrate;
b. a thermistor layer carried by the substrate and having a resistance that is inversely related to temperature, the thermistor layer including a monocrystalline quantum well structure that includes alternating quantum well layers and barrier layers;
c. a first electric contact layer on a first face of the thermistor layer; and
d. a second electric contact layer on a second face of the thermistor layer, wherein the thermistor layer has a resistance that is measured between the fast and second electric contact layers, and wherein a parameter selected from the group consisting of barrier layer band-edge energy, doping level of the quantum well layers, quantum well leyer thickness, barrier layer thickness, and combinations thereof is selected to obtain a temperature coefficient for the structure that is at least 4.0% at room temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification