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Fabrication process for a semiconductor substrate

  • US 6,294,478 B1
  • Filed: 02/27/1997
  • Issued: 09/25/2001
  • Est. Priority Date: 02/28/1996
  • Status: Expired due to Term
First Claim
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1. A fabrication process for a semiconductor film comprising:

  • a step of preparing a first substrate having at least one layer of non-porous thin film on a porous Si layer;

    a step of forming a bonding substrate by bonding said first substrate to a second substrate such that said non-porous thin film is located in an inside of a laminate comprised of these substrates;

    a step of exposing said porous Si layer in a side surface of said bonding substrate comprised of said first substrate and said second substrate;

    a step of dividing said bonding substrate in said porous Si layer by oxidizing said bonding substrate; and

    a step of removing a porous Si and oxidized porous Si layer on said second substrate separated by the division of said bonding substrate in said porous Si layer.

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