Fabrication process for a semiconductor substrate
First Claim
1. A fabrication process for a semiconductor film comprising:
- a step of preparing a first substrate having at least one layer of non-porous thin film on a porous Si layer;
a step of forming a bonding substrate by bonding said first substrate to a second substrate such that said non-porous thin film is located in an inside of a laminate comprised of these substrates;
a step of exposing said porous Si layer in a side surface of said bonding substrate comprised of said first substrate and said second substrate;
a step of dividing said bonding substrate in said porous Si layer by oxidizing said bonding substrate; and
a step of removing a porous Si and oxidized porous Si layer on said second substrate separated by the division of said bonding substrate in said porous Si layer.
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Accused Products
Abstract
SOI substrates are fabricated with sufficient quality and with good reproducibility. At the same time, conservation of resources and reduction of cost are realized by reuse of the wafer and the like.
Carried out to achieve the above are a step of bonding a principal surface of a first substrate to a principal surface of a second substrate, the first substrate being Si substrate in which at least one layer of non-porous thin film is formed through a porous Si layer, a step of exposing the porous Si layer in a side surface of a bonding substrate comprised of the first substrate and the second substrate, a step of dividing the porous Si layer by oxidizing the bonding substrate, and a step of removing the porous Si and oxidized porous Si layer on the second substrate separated by the division of the porous Si layer.
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Citations
57 Claims
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1. A fabrication process for a semiconductor film comprising:
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a step of preparing a first substrate having at least one layer of non-porous thin film on a porous Si layer;
a step of forming a bonding substrate by bonding said first substrate to a second substrate such that said non-porous thin film is located in an inside of a laminate comprised of these substrates;
a step of exposing said porous Si layer in a side surface of said bonding substrate comprised of said first substrate and said second substrate;
a step of dividing said bonding substrate in said porous Si layer by oxidizing said bonding substrate; and
a step of removing a porous Si and oxidized porous Si layer on said second substrate separated by the division of said bonding substrate in said porous Si layer. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 35, 36, 37, 38, 43, 44)
a step of forming a porous Si layer by anodizing a silicon substrate;
a step of forming an oxidized film on a pore wall of the porous Si layer;
a step of forming said non-porous thin film on said silicon substrate.
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36. The fabrication process for a semiconductor film according to claims 1, 2, 3, 4 or 5, wherein said step of forming the bonding substrate is a step of bonding said substrates through an insulating layer.
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37. The fabrication process for a semiconductor film according to claims 1, 2, 3, 4 or 5, wherein said step of dividing the bonding substrate in said porous Si layer is carried out by oxidizing said porous Si layer.
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38. The fabrication process for a semiconductor film according to claims 1, 2, 3, 4 or 5, wherein said oxidizing is carried out by pyro-oxidizing.
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43. A fabrication process for a semiconductor film according to claims 1, 2 or 32, wherein after said removing step, said non-porous thin film is heat-treated under an atmosphere containing hydrogen.
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44. A fabrication process for a semiconductor film according to claims 26, 33 or 34, wherein after said separating step, said non-porous thin film is heat-treated under an atmosphere containing hydrogen.
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2. A fabrication process for a semiconductor film comprising:
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a step of preparing a first substrate having at least one layer of non-porous thin film on a porous Si layer;
a step of forming a bonding substrate by bonding said first substrate to a second substrate such that said non-porous thin film is located in an inside of a laminate comprised of these substrates in which said porous Si layer is exposed in a side surface thereof;
a step of dividing said bonding substrate in said porous Si layer by oxidizing a bonding substrate comprised of said first substrate and said second substrate; and
a step of removing a porous Si and oxidized porous Si layer on said second substrate separated by the division of said bonding substrate in said porous Si layer.
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3. A fabrication process for a semiconductor film comprising:
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a step of preparing a first substrate having at least one layer of non-porous thin film on a separating layer;
a step of forming a bonding substrate by bonding said first substrate to a second substrate such that said non-porous thin film is located in an inside of a laminate comprised of these substrates;
a step of separating said non-porous thin film from said bonding substrate by oxidizing said bonding substrate; and
a step of removing the separating and oxidized separating layer on said second substrate separated by the division of said bonding substrate in said separating layer.
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4. A fabrication process for a semiconductor film comprising:
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a step of preparing a first substrate having at least one layer of non-porous thin film on a separating layer;
a step of forming a bonding substrate by bonding said first substrate to a second substrate such that said non-porous thin film is located in an inside of a laminate comprised of these substrates;
a step of exposing said separating layer in a side surface of said bonding substrate comprised of said first substrate and said second substrate; and
a step of separating said non-porous thin film from said bonding substrate by oxidizing said bonding substrate.
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5. A fabrication process for a semiconductor film comprising:
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a step of preparing a first substrate having at least one layer of non-porous thin film on a separating layer;
a step of forming a bonding substrate by bonding said first substrate to a second substrate such that said non-porous thin film is located in an inside of a laminate comprised of these substrates; and
a step of separating said non-porous thin film from said bonding substrate comprising oxidizing said bonding substrate.
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29. A fabrication process for a semiconductor film comprising:
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anodizing a surface of a single-crystal silicon substrate by changing a current density to form a porous region comprised of three porous layers, forming at least one layer of non-porous thin film on the porous region, and separating the non-porous thin film from the single-crystal silicon substrate. - View Dependent Claims (30, 31, 39, 40, 41, 42)
anodizing the surface of the single-crystal silicon substrate at a first current density, then anodizing the surface at a second current density higher than the first current density, and thereafter anodizing the surface at a third current density lower than the second current density.
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31. A fabrication process for a semiconductor film according to claim 29, wherein an inner surface of each pore of the porous region is coated with a thermally oxidized film prior to the step of forming the non-porous thin film on the porous region.
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39. A fabrication process for a semiconductor film according to claim 29, wherein a structure resulting from forming said non-porous thin film is bonded to a second substrate to permit said non-porous thin film to be located inside before separating said non-porous thin film from said single-crystal silicon substrate.
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40. A fabrication process for a semiconductor film according to claim 39, wherein said structure is bonded to permit an insulating layer to be interposed between said structure and said second substrate.
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41. A fabrication process for a semiconductor film according to claim 29, wherein an anodization solution for forming each of said three porous layers, comprises identical components in identical proportion.
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42. A fabrication process for a semiconductor film according to claim 29, wherein the anodizing step comprises:
anodizing the surface of the single-crystal silicon substrate at a first current density, then anodizing the surface at a second current density higher than the first current density.
- 32. A semiconductor substrate having a non-porous thin film and a single-crystal region with a porous region comprised of three porous layers sandwiched therebetween, wherein a porosity of an intermediate porous layer among the three porous layers of the porous region is higher than a porosity of either of the other porous layers contiguous to the intermediate porous layer and a thickness of the intermediate porous layer is larger than a thickness of either of the other contiguous porous layers.
- 33. A bonding substrate comprised of a first substrate and a second substrate, the first substrate comprising a non-porous thin film, a single-crystal region and a porous region comprised of three porous layers sandwiched between the non-porous thin film and the single-crystal region, wherein the second substrate is bonded to the first substrate such that the non-porous thin film is sandwiched between the second substrate and the porous region, wherein a porosity of an intermediate porous layer among the three porous layers of the porous region is higher than a porosity of either of the other porous layers contiguous to the intermediate porous layer and a thickness of the intermediate porous layer is larger than a thickness of either of the other contiguous porous layers.
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47. A fabrication process for a semiconductor film comprising:
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a step of preparing a first substrate having at least one layer of non-porous thin film on a separating layer;
a step of forming a bonding substrate by bonding said first substrate to a second substrate such that said nonporous thin film is located in an inside of a laminate comprised of these substrates; and
a step of separating said non-porous thin film from said bonding substrate comprising heating said bonding substrate in an oxidizing atmosphere. - View Dependent Claims (48, 49, 50, 51)
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- 52. A fabrication process for a semiconductor film containing a step of separating a bonding substrate formed by bonding a first substrate having an ion-implanted layer in a certain region thereof to a second substrate at the ion-implanted layer, wherein said separating step is comprised of allowing the separation in the bonding substrate to proceed from a side face of the bonding substrate toward the center of the bonding substrate and then heat-treating a part of the first substrate transferred on the second substrate in an atmosphere containing hydrogen.
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56. A fabrication process for a semiconductor film comprising:
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anodizing a surface of a single-crystal silicon substrate by changing a current density to form a porous region comprised of at least two porous layers;
forming at least one layer of non-porous thin film on the porous region;
separating the non-porous thin film from the single crystal silicon substrate; and
heating the non-porous thin film under an atmosphere containing hydrogen. - View Dependent Claims (57)
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Specification