Phosphors for white light generation from UV emitting diodes
First Claim
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1. A composition of matter comprising Ca8Mg(SiO4)4Cl2:
- Eu2+,Mn2+.
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Abstract
Ca8Mg(SiO4)4Cl2:Eu2+,Mn2+ and Y2O3:Eu3+,Bi3+ are phosphors which have been sensitized to absorb ultraviolet radiation, such as from a light emitting diode, and to convert the radiation into visible light. A phosphor conversion material blend comprises Ca8Mg(SiO4)4Cl2:Eu2+,Mn2+; Y2O3:Eu3+,Bi3+, and known blue phosphors that absorb ultraviolet radiation from a LED and convert the radiation into visible bright white light. Also, a light emitting assembly comprises at least one of a red, green and blue phosphor for absorbing and converting ultraviolet radiation into visible light. A laser diode can be used to activate the phosphors to provide improved efficiency and brightness.
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Citations
33 Claims
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1. A composition of matter comprising Ca8Mg(SiO4)4Cl2:
- Eu2+,Mn2+.
- View Dependent Claims (2, 3, 4, 5)
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6. A phosphor conversion material blend composition that is capable of converting ultraviolet radiation to visible light, the phosphor conversion material blend composition comprising:
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at least one red light emitting phosphor;
at least one green light emitting phosphor; and
at least one blue light emitting phosphor;
wherein the green light emitting phosphor comprises Ca8Mg(SiO4)4Cl2;
Eu2+,Mn2+;
the red light emitting phosphor comprises Y2O3;
Eu3+,Bi3+; and
the blue light emitting phosphor comprises at least one material selected from the group consisting of (Sr,Ba,Ca)5(PO4)3Cl;
Eu2+ and BaMg2Al16O27;
Eu2+.
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7. A phosphor conversion material blend composition that is capable of converting ultraviolet radiation to visible light, the phosphor conversion material blend composition comprising:
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at least one red light emitting phosphor;
at least one green light emitting phosphor; and
at least one blue light emitting phosphor, wherein the green light emitting phosphor comprises Ca8Mg(SiO4)4Cl2;
Eu2+,Mn2+;
the red light emitting phosphor comprises Y2O3;
Eu3+,Bi3+, and the blue light emitting phosphor comprises at least one material selected from the group consisting of (Sr,Ba,Ca)5(PO4)Cl;
Eu2+ and BaMg2Al16O27;
Eu2+, andwherein the Y2O3;
Eu3+,Bi3+ is provided in a range between about 40% to about 80% by weight;the Ca8Mg(SiO4)4Cl2;
Eu2+,Mn2+ is provided in a range between about 20% to about 50% by weight; and
the at least one material selected from the group consisting of (Sr,Ba,Ca)5(PO4)3Cl;
Eu2+ and BaMg2Al16O27;
Eu2+ is provided in a range between 5% and about 25% by weight.
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8. A light emitting diode comprising:
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a semiconductor ultraviolet radiation source; and
a phosphor comprising Ca8Mg(SiO4)4Cl2;
Eu2+,Mn2+ radiationally coupled to the semiconductor ultraviolet radiation source;
wherein the Ca8Mg(SiO4)4Cl2;
Eu2+,Mn2+ is capable of absorbing ultraviolet radiation emitted by the semiconductor ultraviolet radiation source and converting the ultraviolet radiation into a green visible light.- View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
a phosphor comprising Y2O3: - Eu3+,Bi3+ radiationally coupled to the semiconductor to the semiconductor ultraviolet radiation source;
wherein the Y2O3;
Eu3+,Bi3+ is capable of absorbing ultraviolet radiation emitted by the semiconductor ultraviolet radiation source and converting the ultraviolet radiation into a red visible light.
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10. The light emitting diode according to claim 8 further comprising
a phosphor comprising at least one material selected from the group consisting of (Sr,Ba,Ca)5(PO4)3Cl: - Eu2+ and BaMg2Al16O27;
Eu2+ radiationally coupled to the semiconductor to the semiconductor ultraviolet radiation source;
wherein the at least one material selected from the group consisting of (Sr,Ba,Ca)5(PO4)3Cl;
Eu2+ and BaMg2Al16O27;
Eu2+ is capable of absorbing ultraviolet radiation emitted by the semiconductor ultraviolet radiation source and converting the ultraviolet radiation into a blue visible light.
- Eu2+ and BaMg2Al16O27;
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11. The light emitting diode according to claim 8 further comprising
a phosphor conversion material blend composition comprising: -
a phosphor which is capable of absorbing ultraviolet radiation emitted by the semiconductor ultraviolet radiation source and converting the ultraviolet radiation into a red visible light; and
a phosphor which is capable of absorbing ultraviolet radiation emitted by the semiconductor ultraviolet radiation source and converting the ultraviolet radiation into a blue visible light.
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12. The light emitting diode according to claim 11 wherein the phosphor which is capable of absorbing ultraviolet radiation emitted by the semiconductor ultraviolet radiation source and converting the ultraviolet radiation into a red visible light comprises Y2O3:
- Eu3+,Bi3+.
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13. The light emitting diode according to claim 11 wherein the phosphor which is capable of absorbing ultraviolet radiation emitted by the semiconductor ultraviolet radiation source and converting the ultraviolet radiation into a blue visible light comprises at least one material selected from the group consisting of (Sr,Ba,Ca)5(PO4)3Cl:
- Eu2+ and BaMg2Al16O27;
Eu2+.
- Eu2+ and BaMg2Al16O27;
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14. The light emitting diode according to claim 11 wherein the phosphor conversion material blend composition absorbs ultraviolet radiation emitted by the semiconductor ultraviolet radiation source and converts the ultraviolet radiation into white visible light to provide a light source having a light output of at least 20 lumens per watt.
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15. The light emitting diode according to claim 11 wherein the phosphor conversion material blend composition absorbs ultraviolet radiation emitted by the semiconductor ultraviolet radiation source and converts the ultraviolet radiation into white visible light to provide a light source having a color rendering index of at least 84.
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16. A light emitting diode comprising:
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a semiconductor ultraviolet radiation source; and
a phosphor conversion material blend composition, wherein the phosphor conversion material composition absorbs ultraviolet radiation emitted by the semiconductor ultraviolet radiation source and converts the ultraviolet radiation into white visible light, and wherein the composition comprises;
Ca8Mg(SiO4)4Cl2;
Eu2+,Mn2+ radiationally coupled to the semiconductor ultraviolet radiation source;
Y2O3;
Eu3+,Bi3+ radiationally coupled to the semiconductor ultraviolet radiation source; and
at least one of (Sr,Ba,Ca)5(PO4)3Cl;
Eu2+ and BaMg2Al16O27;
Eu2+ radiationally coupled to the semiconductor ultraviolet radiation source;
wherein the composition is capable of absorbing ultraviolet source and converting the ultraviolet radiation into visible light.
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17. A light emitting diode comprising:
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a semiconductor ultraviolet radiation source; and
a phosphor conversion material blend composition, wherein the phosphor conversion material composition absorbs ultraviolet radiation emitted by the semiconductor ultraviolet radiation source and converts the ultraviolet radiation into white visible light, and wherein the composition comprises;
Ca8Mg(SiO4)4Cl2;
Eu2+,Mn2+ radiationally coupled to the semiconductor ultraviolet radiation source;
Y2O3;
Eu3+,Bi3+ radiationally coupled to the semiconductor ultraviolet radiation source; and
at least one of (Sr,Ba,Ca)5(PO4)3Cl;
Eu2+ and BaMg2Al16O27;
Eu2+ radiationally coupled to the semiconductor ultraviolet radiation source;
wherein the composition is capable of absorbing ultraviolet source and converting the ultraviolet radiation into visible light;
and wherein the Y2O3;
Eu3+, Bi3+ is provided in a range between about 40% to about 80% by weight;
the Ca8Mg(SiO4)4Cl;
Eu2+,Mn2+ is provided in a range between about 20% to about 50% by weight; and
the at least one of (Sr,Ba,Ca)5(PO4)3C1;
Eu2+ and BaMg2Al16O27;
Eu2+ is provided in a range between about 5% to about 25% by weight.
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18. A light source comprising:
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a semiconductor radiation source which emits radiation;
a transmissive body which contains a plurality of scattering particles, which scatter the radiation, formed adjacent to the semiconductor radiation source through which the radiation from the semiconductor radiation source propagates;
at least one luminescent material formed adjacent to the transmissive body, the at least one luminescent material converting the radiation emitted from the semiconductor radiation source to radiation of a different wavelength. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
Y2O3;
Eu3+, Bi3+;
at least one of;
Ca8Mg(SiO4)4Cl;
Eu2+,Mn2+;
Ba2SiO4;
Eu2+; and
(Ba,Sr)Al2O4;
Eu2+; and
at least one of;
(Ba,Sr,Ca)5(PO4)3Cl;
Eu3+;
BaMg2Al16O27;
Eu2+; and
BaMgAl10O17;
Eu2+.
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23. The light source of claim 19, wherein the transmissive body comprises at least one of a glass material, a plastic material, and a silicone material which encapsulates the laser diode.
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24. The light source of claim 20, wherein the at least one luminescent material comprises at least one phosphor formed on a surface of the transmissive body.
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25. The light source of claim 20, wherein the at least one phosphor comprises Y2O3:
- Eu3+,Bi3+.
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26. The light source of claim 20, wherein the at least one phosphor comprises Ca8Mg(SiO4)4Cl2:
- Eu2+,Mn2+.
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27. The light source of claim 20, wherein the at least one phosphor comprises Ba2SiO4:
- Eu2+.
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28. The light source of claim 20, wherein the at least one phosphor comprises (Ba,Sr)Al2O4:
- Eu2+.
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29. The light source of claim 20, wherein the at least one phosphor comprises (Ba,Sr,Ca)5(PO4)3Cl:
- Eu2+.
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30. The light source of claim 20, wherein the at least one phosphor comprises BaMgAl10O17:
- Eu2+.
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31. The light source of claim 20, wherein the at least one phosphor comprises BaMg2Al16O27:
- Eu2+.
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32. A method of producing light comprising the steps of:
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generating radiation having a wavelength in a range of about 350-400 nm with a laser diode;
scattering the radiation with a plurality of scattering particles disposed around the laser diode; and
converting at least a portion of the scattered radiation to a different wavelength with at least one phosphor. - View Dependent Claims (33)
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Specification