Semiconductor interconnect having laser machined contacts

• US 6,294,837 B1
• Filed: 08/30/1999
• Issued: 09/25/2001
• Est. Priority Date: 12/18/1997
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Farnworth, Warren M., Wood, Alan G., Akram, Salman
• Primary Examiner(s): Tran, Minh Loan
• Assistant Examiner(s): THAI, LUAN C
• Application Number:
  US09/385,606
• Time in Patent Office: 757 Days
• Field of Search: 257/774, 257/773, 257/772, 257/738, 257/698, 257/779, 257/780
• US Class Current: 257/774
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/16237 the bump connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 2224/8014 Guiding structures outside the body
• CPC Class Codes: H01L 2224/81136 involving guiding structures, e.g. spacers or supporting members
• CPC Class Codes: H01L 2224/8114 Guiding structures outside the body
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/82039 using a laser
• CPC Class Codes: H01L 2225/1023 the support being an insulating substrate
• CPC Class Codes: H01L 2225/1058 : Bump or bump-like electrical connections, e.g. balls, pillars, posts
• CPC Class Codes: H01L 23/13 : characterised by the shape
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/5389 : the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/10 : Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/90 : Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 25/105 : the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01009 : Fluorine [F]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15331 : being a ball array, e.g. BGA
• CPC Class Codes: H05K 1/0306 : Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 1/112 : directly combined with via connections
• CPC Class Codes: H05K 2201/09472 : Recessed pad for surface mounting; Recessed electrode of component
• CPC Class Codes: H05K 2201/0959 : Plated through-holes or plated blind vias filled with insulating material
• CPC Class Codes: H05K 2201/09827 : Tapered, e.g. tapered hole, via or groove
• CPC Class Codes: H05K 2201/09845 : Stepped hole, via, edge, bump or conductor
• CPC Class Codes: H05K 2201/10674 : Flip chip
• CPC Class Codes: H05K 2201/10734 : Ball grid array [BGA]; Bump grid array
• CPC Class Codes: H05K 3/0029 : of inorganic insulating material
• CPC Class Codes: H05K 3/0032 : of organic insulating material

Abstract

An interconnect for semiconductor components such as dice, wafers and chip scale packages is provided. The interconnect includes a substrate, and patterns of contacts formed on a face side of the substrate adapted to electrically engage external contacts (e.g., bond pads, solder bumps) on the components. The interconnect also includes insulated conductive members through the substrate, which provide direct electrical paths from the interconnect contacts to a backside of the substrate. The conductive members can be formed by laser machining openings in the substrate, and then filling the openings with a conductive material (e.g., metal, conductive polymer). The conductive members can also include pads with contact balls, configured for electrical interface with a test apparatus, such as test carrier or wafer handler. The interconnect can be used to construct test systems for testing semiconductor components, or to construct chip scale packages and multi chip modules.

Claims

1. An interconnect for a semiconductor component having an external contact comprising:

a substrate having a first side and an opposing second side;

a contact on the first side configured to make an electrical connection with the external contact, the contact comprising a recess configured to retain the external contact and a conductive layer on the recess configured to electrically engage the external contact; and

a conductive member in electrical communication with the contact, the conductive member comprising a laser machined opening through the conductive layer and through the substrate to the opposing second side, and a conductive material in the opening in contact with the conductive layer.

2. The interconnect of claim 1 wherein the conductive material comprises a material selected from the group consisting of metal and conductive polymer.

3. The interconnect of claim 1 wherein the conductive member and the contact have coincident center lines.

4. The interconnect of claim 1 wherein the conductive member and the contact have offset center lines.

5. The interconnect of claim 1 wherein the conductive member comprises a pad on the opposing second side in electrical communication with the conductive material.

6. The interconnect of claim 1 wherein the conductive member comprises a contact ball on the opposing second side in electrical communication with the conductive material.

7. An interconnect for a semiconductor component having an external contact comprising:

a substrate having a first side and an opposing second side;

a contact on the first side configured to make an electrical connection with the external contact, the contact comprising a penetrating member configured to penetrate the external contact, and a conductive layer on the penetrating member configured to electrically engage the external contact; and

a conductive member in electrical communication with the contact, the conductive member comprising a laser machined opening through the conductive layer and the substrate to the opposing second side, and a conductive material at least partially filling the opening.

8. The interconnect of claim 7 wherein the contact comprises a recess having the penetrating member therein at least partially covered by the conductive layer and configured to retain the external contact.

9. The interconnect of claim 7 wherein the contact comprises a projection having the penetrating member thereon at least partially covered by the conductive layer and configured to electrically engage the external contact.

10. The interconnect of claim 7 wherein the conductive member comprises a pad on the opposing second side in contact with the conductive material and a ball on the pad.

11. An interconnect for a semiconductor component having an external contact comprising:

a substrate having a first side and an opposing second side;

a contact on the first side configured to electrically engage the external contact, the contact comprising a recess configured to retain the external contact, and a conductive layer at least partially covering the recess configured to contact the external contact;

a laser machined opening through the conductive layer, the recess and the substrate to the opposing second side; and

a conductive material in the opening in contact with the conductive layer.

12. The interconnect of claim 11 wherein the conductive material comprises a metal at least partially filling the opening.

13. The interconnect of claim 11 wherein the conductive material comprises a metal layer on a surface of the opening.

14. The interconnect of claim 11 wherein the conductive material comprises a conductive polymer at least partially filling the opening.

15. The interconnect of claim 11 wherein the conductive material comprises a pad on the opposing second side and a contact ball on the pad.

16. The interconnect of claim 11 wherein the recess comprises a stepped surface configured to electrically engage external contacts on the component having different diameters.

17. An interconnect for a semiconductor component having an external contact comprising:

a substrate having a first side and an opposing second side;

a contact on the first side configured to electrically engage the external contact, the contact comprising a projection and a conductive layer on the projection;

a laser machined opening through the conductive layer and the substrate to the opposing second side;

an insulating layer on an inside surface of the opening; and

a conductive material in the opening in contact with the conductive layer.

18. The interconnect of claim 17 further comprising a penetrating member on the projection configured to penetrate the external contact.

19. The interconnect of claim 17 further comprising a contact ball on the opposing second side in electrical communication with the conductive material and the contact.

20. The interconnect of claim 17 further comprising a pad on the opposing second side in electrical communication with the conductive material and the contact.

21. The interconnect of claim 17 wherein the conductive material comprises a material selected from the group consisting of metal and conductive polymer.