Method for reducing damage to wafer cutting blades during wafer dicing

• US 6,295,978 B1
• Filed: 07/20/2000
• Issued: 10/02/2001
• Est. Priority Date: 11/26/1996
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Wark, James M., Akram, Salman
• Primary Examiner(s): BANKS, DERRIS HOLT
• Application Number:
  US09/619,944
• Time in Patent Office: 439 Days
• Field of Search: 451/388, 451/390, 451/283, 451/285, 451/289, 451/290, 451/397, 451/402, 451/364, 451/28, 451/41, 451/54, 451/31, 451/57, 451/63, 451/44, 437/226, 437/227, 437/209, 437/212, 148/DIG.28, 269/21, 125/35, 125/12, 125/13.01, 125/20
• US Class Current: 125/35
• CPC Class Codes: B28D 5/0094 the supporting or holding device being of the vacuum type

Abstract

A method of forming a support for supporting the underside of a semiconductor wafer having a circuit side, an underside, and a street index that defines dice on the semiconductor wafer, at least during dicing of the semiconductor wafer, is provided. The method includes providing a support having a surface for supporting the underside of the semiconductor wafer and forming at least one recess in the surface corresponding to the street index of the semiconductor wafer.

Claims

1. A method of forming a support for a semiconductor wafer at least during dicing of the semiconductor wafer, wherein the semiconductor wafer has a circuit side, an underside, and a street index that defines dice on the semiconductor wafer, comprising:

providing a support having a surface for supporting the underside of the semiconductor wafer; and

forming at least one recess in the surface corresponding to the street index of the semiconductor wafer.

2. The method of claim 1, wherein the support has an endless edge and said forming includes forming at least one recess extending from a first portion of the endless edge to a second portion of the endless edge.

3. The method of claim 1, wherein said forming includes forming at least one recess having a width at least as wide as a cutting blade utilized for dicing the wafer.

4. The method of claim 1, further comprising placing an adhesive intermediate the support and the semiconductor wafer.

5. The method of claim 4, further comprising displacing the adhesive from the wafer at the at least one recess.

6. The method of claim 5, wherein said displacing includes applying a negative pressure intermediate the adhesive and the support.

7. The method of claim 5, further comprising forming a port through the support in fluid communication with the recess.

8. The method of claim 7, further comprising applying a negative pressure to the port.

9. The method of claim 1, wherein said forming includes cutting the support.

10. The method of claim 1, wherein said forming includes etching the support.

11. The method of claim 1, wherein said forming includes forming a recess having a V-shaped cross-section.

12. The method of claim 1, wherein said forming includes forming a recess having a semi-circular cross-section.

13. The method of claim 1, wherein said forming includes forming a recess having a semi-elliptical cross-section.

14. The method of claim 1, wherein said forming includes forming a recess having a semi-trapezoidal cross-section.

15. The method of claim 1, further comprising forming at least one second recess on the support.

16. The method of claim 15, further comprising aligning a street index of a second semiconductor wafer with the at least one second recess.

17. The method of claim 1, further comprising forming at least one port in fluid communication with the surface of the support.

18. The method of claim 17, further comprising applying a negative pressure to the port for securing the underside of the semiconductor wafer to the support.

19. The method of claim 17, further comprising:

securing the semiconductor wafer to a wafer frame; and

applying a negative pressure to the port to secure the wafer frame to the support.

20. A method of forming a support for supporting the underside of a semiconductor wafer during dicing of the semiconductor wafer, wherein the semiconductor wafer has a circuit side, an underside, and a street index that defines dice on the semiconductor wafer, comprising:

providing a support having a surface for supporting the underside of the semiconductor wafer;

forming a plurality of recesses, having a width at least as wide as a cutting blade utilized for dicing the wafer, in the surface, wherein the recesses correspond to the street index of the semiconductor wafer;

placing an adhesive intermediate the support and the semiconductor wafer;

forming a port through the support in fluid communication with the recess; and

applying a negative pressure to the port.