Tilt-angle ion implant to improve junction breakdown in flash memory application
First Claim
1. An optimum implant angle method of forming a DDD (Doubly Doped Drain) in a stacked flash memory cell comprising the steps of:
- providing a silicon substrate having a plurality of active and field regions defined;
forming a gate oxide layer over said substrate;
forming a floating gate over said thick gate oxide layer;
forming an inter-gate oxide layer over said floating gate;
forming a stacked control gate over said inter-gate oxide;
forming oxide spacers on sidewalls of said stacked gate;
performing a first lightly doped implantation with an optimum tilt-angle between about 40 to 50 degrees once from the right and once from the left with respect to the sidewalls of said stacked gate; and
then performing a second heavily doped implantation with said optimum tilt-angle once from the right and once from the left with respect to the sidewalls of said stacked gate.
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Abstract
A method is disclosed for forming LDDs (Lightly Doped Drains) in high voltage devices employed in non-volatile memories and DDDs (Doubly Doped Drains) in flash memory applications. The high voltage device is formed by using two successive ion implantations at a tilted angle which provides an improved gradation of doped profile near the junction and the attendant improvement in junction breakdown at higher voltages. The doubly doped drain in a stacked flash memory cell is also formed by two implantations, but at an optimum tilt-angle, where the first implantation is lightly doped, and the second, heavily doped. The resulting DDD provides faster program speed, reduced program current, increase read current and reduced drain disturb in the flash memory cell.
44 Citations
14 Claims
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1. An optimum implant angle method of forming a DDD (Doubly Doped Drain) in a stacked flash memory cell comprising the steps of:
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providing a silicon substrate having a plurality of active and field regions defined;
forming a gate oxide layer over said substrate;
forming a floating gate over said thick gate oxide layer;
forming an inter-gate oxide layer over said floating gate;
forming a stacked control gate over said inter-gate oxide;
forming oxide spacers on sidewalls of said stacked gate;
performing a first lightly doped implantation with an optimum tilt-angle between about 40 to 50 degrees once from the right and once from the left with respect to the sidewalls of said stacked gate; and
thenperforming a second heavily doped implantation with said optimum tilt-angle once from the right and once from the left with respect to the sidewalls of said stacked gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An optimum implant angle method of forming a DDD (Doubly Doped Drain) in a flash memory cell comprising the steps of:
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providing a substrate having active and passive regions defined;
forming a plurality of gates over said substrate;
performing a first lightly doped implantation with an optimum tilt-angle to form a junction of said DDD in said flash memory cell, wherein said first lightly doped implantation is performed twice, once from the right and once from the left with an optimum tilt-angle between about 40 to 50 degrees with respect to the sidewalls of said flash memory cell;
thenperforming a second heavily doped implantation with said optimum tilt-angle to form a surface region of said DDD in said flash memory cell, wherein said second heavily doped implantation is performed twice, once from the right and once from the left with said optimum tilt-angle with respect to the sidewalls of said flash memory cell;
or, alternativelyrotating said substrate at said optimum tilt-angle while performing said first lightly doped implantation, and then said second heavily implantation; and
performing a drive-in diffusion of said doubly doped drain, DDD. - View Dependent Claims (11, 12, 13, 14)
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Specification