Semiconductor device and method for production thereof

• US 6,297,537 B1
• Filed: 02/19/1999
• Issued: 10/02/2001
• Est. Priority Date: 04/15/1997
• Status: Expired due to Fees

• Current Assignee: Oki Semiconductor Company Limited (ROHM Co., Ltd.)
• Original Assignee: OKI Electric Industry Company Limited
• Inventors: Saito, Minoru
• Primary Examiner(s): Pham, Long
• Assistant Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US09/253,000
• Time in Patent Office: 956 Days
• Field of Search: 438/132, 438/278, 438/411, 438/130, 438/128, 438/592, 438/587, 438/391, 438/597, 438/598, 438/618, 438/622, 257/390, 257/758
• US Class Current: 257/390
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 23/53257 the principal metal being a refractory metal
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 20/00 Read-only memory [ROM] devices
• CPC Class Codes: H10B 20/38 Doping programmed, e.g. mask ROM

Abstract

A semiconductor device e.g. a gate array, a mask ROM or the like produced by supplementing one or more upper-layer interconnections to units selected out of those previously produced in a half-finished semiconductor device, wherein the upper-layer interconnections are connected exclusively with the selected ones of the foregoing units and are isolated from the unselected ones of the foregoing units, by a space or an insulator layer produced between the upper-layer interconnection and a layer in which conductive paths are produced for connecting the upper-layer interconnection and the foregoing units.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

a plurality of monolithic electronic components on said semiconductor substrate;

a first insulator layer extending over said semiconductor substrate and said electronic components;

a plurality of contact pads arranged on said first insulator layer and connected to electrodes of said electronic components through said first insulator layer;

a second insulator layer extending over said plurality of contact pads and said first insulator layer;

a plurality of plug-shaped conductive pieces which are spaced apart from one another and aligned in a first direction, said plug-shaped conductive pieces penetrating said second insulator layer so as to connect with respective ones of said contact pads;

an insulating medium extending over said plug-shaped conductive pieces and said second insulating layer, wherein the insulating medium is an atmosphere; and

an elongated electrode extending in the first direction over said plug-shaped conductive pieces such that said insulating medium is interposed between said elongated electrode and said plug-shaped conductive pieces, said elongated electrode connected to at least one of said plug-shaped conductive pieces, and said elongated electrode isolated from at least one remaining one of said plug-shaped conductive pieces by said insulating medium.

2. A semiconductor device comprising:

a semiconductor substrate;

a plurality of monolithic electronic components on said semiconductor substrate;

a first insulator layer extending over said semiconductor substrate and said electronic components;

a plurality of contact pads arranged on said first insulator layer and connected to electrodes of said electronic components through said first insulator layer;

a second insulator layer extending over said plurality of contact pads and said first insulator layer;

a plurality of plug-shaped conductive pieces which are spaced apart from one another and aligned in a first direction, said plug-shaped conductive pieces penetrating said second insulator layer so as to connect with respective ones of said contact pads;

an insulating medium extending over said plug-shaped conductive pieces and said second insulating layer, wherein the insulating medium is an atmosphere; and

an elongated electrode extending in the first direction over said plug-shaped conductive pieces such that said insulating medium is interposed between said elongated electrode and said plug-shaped conductive pieces, said elongated electrode connected to at least one of said plug-shaped conductive pieces, and said elongated electrode isolated from at least one remaining one of said plug-shaped conductive pieces by said insulating medium;

wherein said elongated electrode includes a plurality of spaced apart wide portions having widths which are wider than a remainder of said elongated electrode, and wherein said semiconductor device further includes a plurality of conductive support members connected below respective ones of said wide portions of said elongated electrode, wherein at least one of said conductive support members is connected to said at least one of said plug-shaped conductive pieces, and wherein at least one remaining one of said conductive support members is connected to said second insulating layer and isolated from all of said plug-shaped conductive pieces.

3. A semiconductor device comprising:

a semiconductor substrate;

a plurality of monolithic electronic components on said semiconductor substrate;

a first insulator layer extending over said semiconductor substrate and said electronic components;

a plurality of contact pads arranged on said first insulator layer and connected to electrodes of said electronic components through said first insulator layer;

a second insulator layer extending over said plurality of contact pads and said first insulator layer;

a plurality of plug-shaped conductive pieces which are spaced apart from one another and aligned in a first direction, said plug-shaped conductive pieces penetrating said second insulator layer so as to connect with respective ones of said contact pads;

an insulating medium extending over said plug-shaped conductive pieces and said second insulating layer, wherein the insulating medium is an atmosphere; and

an elongated electrode extending in the first direction over said plug-shaped conductive pieces such that said insulating medium is interposed between said elongated electrode and said plug-shaped conductive pieces, said elongated electrode connected to at least one of said plug-shaped conductive pieces, and said elongate electrode isolated from at least one remaining one of said plug-shaped conductive pieces by said insulating medium;

wherein said elongated electrode includes a plurality of spaced apart wide portions having widths which are wider than a remainder of said elongated electrode, and wherein said semiconductor device further includes a plurality of conductive support members connected below respective ones of said wide portions of said elongated electrode, wherein at least one of said conductive support members is connected to said at least one of said plug-shaped conductive pieces, and wherein at least one remaining one of said conductive support members is connected to said second insulating layer and isolated from all of said plug-shaped conductive pieces; and

wherein said elongate electrode and said conductive support members consist of a same continuous material.

4. A semiconductor device comprising:

a semiconductor substrate;

a plurality of monolithic electronic components on said semiconductor substrate;

a first insulator layer extending over said semiconductor substrate and said electronic components;

a plurality of contact pads arranged on said first insulator layer and connected to electrodes of said electronic components through said first insulator layer;

a second insulator layer extending over said plurality of contact pads and said first insulator layer;

a plurality of plug-shaped conductive pieces which are spaced apart from one another and aligned in a first direction, said plug-shaped conductive pieces penetrating said second insulator layer so as to connect with respective ones of said contact pads;

an insulating medium extending over said plug-shaped conductive pieces and said second insulating layer, wherein the insulating medium is a layer of insulating material; and

an elongated electrode extending in the first direction over said plug-shaped conductive pieces such that said insulating medium is interposed between said elongated electrode and said plug-shaped conductive pieces, said elongated electrode connected to at least one of said plug-shaped conductive pieces, and said elongated electrode isolated from at least one remaining one of said plug-shaped conductive pieces by said insulating medium;

wherein said elongated electrode includes a plurality of spaced apart wide portions having widths which are wider than a remainder of said elongated electrode, and wherein said semiconductor device further includes a plurality of conductive support members connected below respective ones of said wide portions of said elongated electrode, wherein at least one of said conductive support members is connected to said at least one of said plug-shaped conductive pieces, and wherein at least one remaining one of said conductive support members is connected to said second insulating layer and isolated from all of said plug-shaped conductive pieces; and

wherein said elongate electrode and said conductive support members consist of a same continuous material.