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Applications for non-volatile memory cells

  • US 6,297,989 B1
  • Filed: 02/26/1999
  • Issued: 10/02/2001
  • Est. Priority Date: 02/26/1999
  • Status: Expired due to Fees
First Claim
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1. A circuit switch, comprising:

  • a non-volatile memory cell, wherein the non-volatile memory cell includes;

    a metal oxide semiconductor field effect transistor (MOSFET) formed in a semiconductor substrate;

    a capacitor, wherein the capacitor includes a stacked capacitor formed in a subsequent layer above the MOSFET according to a dynamic random access memory (DRAM) process flow, and wherein a bottom plate of the stacked capacitor is cup shaped having interior walls and exterior walls and is separated by a capacitor dielectric from a top plate; and

    a vertical electrical via coupling a bottom plate of the capacitor through an insulator layer to a gate of the MOSFET;

    a wordline coupled to a top plate of the capacitor in the non-volatile memory cell;

    a sourceline coupled to a source region of the MOSFET in the non-volatile memory cell; and

    a bit line coupled to a drain region of the MOSFET in the non-volatile memory cell and coupled to logic/select circuit.

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