Method for manufacturing a panel for a liquid crystal display with a plasma-treated organic insulating layer
First Claim
1. A method for manufacturing a liquid crystal display panel, comprising the steps of:
- forming an organic insulating layer on an insulating substrate;
treating the organic insulating layer with a first plasma;
depositing a transparent conducting layer on the organic insulating layer treated with the first plasma; and
patterning the transparent conducting layer, wherein the organic insulating layer is treated with a second plasma before treating with the first plasma.
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Accused Products
Abstract
Disclosed is an organic insulating layer that is formed on an insulating substrate for an LCD having a gate electrode, a semiconductor layer, and a source and drain electrode, and that is patterned to form a contact hole exposing the drain electrode. The organic insulating layer is treated with argon plasma to remove residues of the organic insulating layer and to increase its surface roughness. Next, a transparent insulating layer, such as an ITO layer, is deposited and patterned to form a pixel electrode connected to the drain electrode through the contact hole. By this method, contact resistance between the pixel electrode and the drain electrode is reduced. The transparent electrode pattern is prevented from being over-etched and undercut during wet etch patterning because the adhesion between the organic insulating layer and the transparent conducting layer is strengthened. As a result, the width uniformity of the transparent electrode pattern is increased.
124 Citations
29 Claims
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1. A method for manufacturing a liquid crystal display panel, comprising the steps of:
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forming an organic insulating layer on an insulating substrate;
treating the organic insulating layer with a first plasma;
depositing a transparent conducting layer on the organic insulating layer treated with the first plasma; and
patterning the transparent conducting layer, wherein the organic insulating layer is treated with a second plasma before treating with the first plasma. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
forming color filter patterns and a black matrix layer on the insulating substrate; and
patterning the transparent conducting layer to form an aperture pattern in the transparent conducting layer.
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6. The method of claim 1, further comprising the steps of:
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forming a gate wire including a plurality of gate lines and gate electrodes on the insulating substrate;
forming a semiconductor layer overlapping and insulated from the gate electrodes;
depositing a metal layer for a data wire on the gate wire, the semiconductor layer, and the insulating substrate, patterning the metal layer to form the data wire including a plurality of data lines crossing and insulated from the gate lines, source electrodes connected to the data lines and overlapping a boundary of the semiconductor layer, and drain electrodes overlapping a boundary of the semiconductor layer at an opposite side from the source electrodes;
forming a plurality of first contact holes exposing the drain electrodes by removing portions of the organic insulating layer; and
patterning the transparent conducting layer to form a plurality of pixel electrodes connected to the drain electrodes through the first contact holes, located in a pixel area defined by the gate lines and the data lines, and overlapping the gate lines and the data lines.
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7. The method of claim 6, wherein the metal layer for the data wire is formed of chromium.
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8. The method of claim 6, wherein the semiconductor layer is amorphous silicon.
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9. The method of claim 6, further comprising the step of sputtering the surface of the drain electrodes exposed through the first contact holes after forming the first contact holes.
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10. The method of claim 9, wherein the step of sputtering uses argon gas.
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11. The method of claim 9, further comprising the steps of:
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patterning the metal layer for the data wire to form a plurality of data pads connected to each end of the data lines; and
patterning the organic insulating layer to form second contact holes exposing the data pads, wherein the data pads exposed through the second contact holes are also sputtered in the step of sputtering the surface of the drain electrodes.
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12. The method of claim 11, further comprising the step of patterning the transparent conducting layer to form a plurality of redundant data pads connected to the data pads through the second contact holes.
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13. The method of claim 1, further comprising the steps of:
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forming a gate wire including a plurality of gate lines and gate electrodes on the insulating substrate;
forming a semiconductor layer overlapping and insulated from the gate electrodes;
depositing a metal layer for a data wire on the gate wire, the semiconductor layer, and the insulating substrate;
patterning the metal layer to form the data wire including a plurality of data lines crossing and insulated from the gate lines, source electrodes connected to the data lines and overlapping a boundary of the semiconductor layer and drain electrodes overlapping a boundary of the semiconductor layer at an opposite side from the source electrodes;
forming a plurality of first contact holes exposing the drain electrodes by removing portions of the organic insulating layer; and
patterning the transparent conducting layer to form a plurality of pixel electrodes connected to the drain electrodes through the first contact holes, located in a pixel area defined by crossing of the gate lines and the data lines, and overlapping the gate lines and the data lines.
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14. The method of claim 13, wherein the metal layer for the data wire is formed of chromium.
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15. The method of claim 13, wherein the semiconductor layer is amorphous silicon.
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16. The method of claim 13, further comprising the step of sputtering the surface of the drain electrodes exposed through the first contact holes after forming the first contact holes.
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17. The method of claim 16, wherein the step of sputtering uses argon gas.
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18. The method of claim 16, further comprising the steps of:
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patterning the metal layer for the data wire to form a plurality of data pads connected to each end of the data lines; and
patterning the organic insulating layer to form second contact holes exposing the data pads, wherein the data pads exposed through the second contact holes are also sputtered in the step of sputtering the drain electrodes.
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19. The method of claim 18, further comprising the step of patterning the transparent conducting layer to form a plurality of redundant data pads connected to the data pads through the second contact holes.
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20. A method for manufacturing a liquid crystal display panel, comprising the steps of:
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forming a gate wire including a plurality of gate lines and gate electrodes on an insulating substrate;
sequentially depositing a first insulating layer, a semiconductor layer, and an ohmic contact layer on the gate wire;
patterning the ohmic contact layer and the semiconductor layer to form an ohmic contact layer pattern and a semiconductor layer pattern;
forming a data wire including a plurality of data lines and source electrodes and drain electrodes contacting the ohmic contact layer pattern;
forming color filters on the data wire, the gate wire, and the first insulating layer;
patterning the color filters to form a plurality of first contact holes exposing the drain electrodes;
treating the color filters with a first plasma;
depositing a transparent conducting layer on the treated color filters; and
patterning the transparent conducting layer to form a plurality of pixel electrodes connected to the drain electrodes through the first contact holes. - View Dependent Claims (21, 22, 23, 24)
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25. A method for manufacturing a panel for a liquid crystal display, comprising the steps of:
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forming a gate wire including a plurality of gate lines and gate electrodes on an insulating substrate;
sequentially depositing a first insulating layer, a semiconductor layer, and an ohmic contact layer on the gate wire;
patterning the ohmic contact layer and the semiconductor layer to form an ohmic contact layer pattern and a semiconductor layer pattern;
forming a data wire including a plurality of data lines and source electrodes and drain electrodes contacting the ohmic contact layer pattern;
forming color filters on the data wire, the gate wire, and the first insulating layer;
forming an organic insulating layer covering the color filters;
patterning the organic insulating layer and the color filters to form a plurality of first contact holes exposing the drain electrodes;
treating the organic insulating layer with a first plasma;
depositing a transparent conducting layer on the treated organic insulating layer; and
patterning the transparent conducting layer to form a plurality of pixel electrodes connected to the drain electrodes through the first contact holes. - View Dependent Claims (26, 27, 28, 29)
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Specification