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Methods of forming integrated circuit capacitors having composite titanium oxide and tantalum pentoxide dielectric layers therein

  • US 6,300,215 B1
  • Filed: 10/14/1999
  • Issued: 10/09/2001
  • Est. Priority Date: 10/19/1998
  • Status: Expired due to Term
First Claim
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1. A method of forming an integrated circuit device, comprising the steps of:

  • forming a first conductive layer on a substrate;

    forming a nitride compound layer on the first conductive layer;

    forming a dielectric layer on the nitride compound layer, opposite the first conductive layer;

    converting the nitride compound layer into an oxygen compound layer.

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