Uncooled infrared focal plane imager and microelectromechanical infrared detector for use therein

• US 6,300,632 B1
• Filed: 10/14/1999
• Issued: 10/09/2001
• Est. Priority Date: 10/14/1999
• Status: Expired due to Fees

• Current Assignee: Board of Regents of the University of Michigan (University of Michigan)
• Original Assignee: Board of Regents of the University of Michigan (University of Michigan)
• Inventors: Liu, Chien-Chang, Mastrangelo, Carlos H.
• Primary Examiner(s): Dang, Hung Xuan
• Application Number:
  US09/418,391
• Time in Patent Office: 726 Days
• Field of Search: 250/338.4, 250/338.3, 250/338.2, 250/338.1, 250/336.1, 250/337, 250/330, 250/332, 250/333, 250/370.01, 250/370.14, 250/370.15, 250/352
• US Class Current: 250/338.4
• CPC Class Codes: G01J 5/06 Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity for adjusting of solid angle of collected radiation G01J5/07; means for wavelength selection G01J5/0801
• CPC Class Codes: H01L 27/14649 Infrared imagers

Abstract

An uncooled infrared imager and associated microelectromechanical infrared detectors based on an active pixel heat balancing technique are disclosed. The imager is fabricated using a commercial CMOS process plus a simple electrochemical etch stop releasing step. The basic active pixel detector structure consists of a simple cascode CMOS amplifier in which the PMOS devices are built inside a thermally-isolated floating n-well. The intrinsic coupling of the cascode currents with the self-heating of the well forms an electrothermal feedback loop that tends to maintain the well temperature constant. By employing the heat balance between incoming infrared radiation and the PMOS device power dissipation, the responsivity of the detector is controlled by the cascode biasing current.

Claims

1. An uncooled infrared focal plane imager comprising:

a plurality of microelectromechanical infrared detectors disposed in a plane wherein each of the infrared detectors includes;

a substrate;

a sensor positioned in an area thermally isolated from the substrate for sensing temperature and to provide a corresponding temperature signal representing incident power of infrared energy; and

a heater for controllably hearing the sensor based on the temperature signal, wherein a change in incident power of the infrared energy is substantially balanced by a corresponding change in heat generated by the heater to heat the sensor; and

a signal processor for processing the temperature signals from the infrared detectors to obtain an infrared image.

2. The imager as claimed in claim 1 wherein the heater is a circuit element.

3. The imager as claimed in claim 2 wherein the circuit element is a MOSFET.

4. The imager as claimed in claim 1 wherein the substrate is a semiconductor substrate.

5. The imager as claimed in claim 1 wherein the sensor is a thermistor element.

6. The imager as claimed in claim 5 wherein the thermistor element is a MOSFET.

7. The imager as claimed in claim 1 further comprising a comparator for comparing the temperature signal with a reference temperature signal and providing an output signal based on the comparison wherein the heat generated by the heater is based on the output signal.

8. The imager as claimed in claim 1 further comprising a support structure for supporting the sensor and the heater in spaced relationship from the substrate.

9. The imager as claimed in claim 1 wherein the sensor and the heater are PMOS devices.

10. The imager as claimed in claim 1 wherein the sensor and the heater comprise stages of a cascade amplifier.

11. A microelectromechanical infrared detector comprising:

a substrate;

a sensor positioned in an area thermally isolated from the substrate for sensing temperature and to provide a corresponding temperature signal representing incident power of infrared energy; and

a heater for controllably heating the sensor based on the temperature signal, wherein a change in incident power of infrared energy is substantially balanced by a corresponding change in heat generated by the heater to heat the sensor.

12. The detector as claimed in claim 11 wherein the heater is a circuit element.

13. The detector as claimed in claim 12 wherein the circuit element is a MOSFET.

14. The detector as claimed in claim 11 wherein the substrate is a semiconductor substrate.

15. The detector as claimed in claim 11 wherein the sensor is a thermistor element.

16. The detector as claimed in claim 15 wherein the thermistor element is a MOSFET.

17. The detector as claimed in claim 11 further comprising a comparator for comparing the temperature signal with a reference temperature signal and providing an output signal based on the comparison wherein the heat generated by the heater is based on the output signal.

18. The detector as claimed in claim 11 further comprising a support structure for supporting the sensor and the heater in spaced relationship from the substrate.

19. The detector as claimed in claim 11 wherein the sensor and the heater are PMOS devices.

20. The detector as claimed in claim 11 wherein the sensor and the heater comprise stages of a cascade amplifier.