Procedure for the calibration of a measuring device

• US 6,300,757 B1
• Filed: 04/21/1999
• Issued: 10/09/2001
• Est. Priority Date: 04/21/1998
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments Deutschland Gesellschaft Mit Beschrã¤Nkter Haftung (Texas Instruments, Inc.)
• Inventors: Janssen, Michael
• Primary Examiner(s): Brown, Glenn W.
• Assistant Examiner(s): Nguyen, Jimmy
• Application Number:
  US09/296,035
• Time in Patent Office: 902 Days
• Field of Search: 324/601, 324/602, 324/158.1, 324/756, 324/74, 324/404, 438/14, 438/15, 438/16, 364/571.02, 702/85, 702/118, 702/121
• US Class Current: 324/750.02
• CPC Class Codes: G01R 35/007 Standards or reference devices, e.g. voltage or resistance standards, "golden references"

Abstract

A method for the calibration of a measuring device for the measurement of RF parameters of integrated circuits on semiconductor wafers on which there are a large number of such integrated circuits, which is to be carried out as follows: A calibration semiconductor wafer is produced, containing integrated comparison circuit units which correspond to a plurality of characteristic circuit types, and which may be contacted via measuring points on the surface of the calibration semiconductor wafer. The S two-port parameters of each circuit unit on the calibration semiconductor wafer corresponding to any one circuit type are measured with precision. The measured S two-port parameters are stored. The calibration semiconductor wafer is inserted into the measuring device. The measuring device is then calibrated in such a way as to achieve an optimum impedance match at the measuring probe tips which will be brought into contact with the measuring points of the calibration semiconductor wafer.

Claims

1. Method for the calibration of a measuring device for the measurement of RF parameters of integrated circuits on semiconductor wafers on which there are a large number of such integrated circuits comprising the steps of:

a) a calibration semiconductor wafer is produced, containing integrated comparison circuit units which correspond to a plurality of characteristic circuit types, and which may be contacted via measuring points on the surface of the calibration semiconductor wafer;

b) four-pole parameters of each circuit unit on the calibration semiconductor wafer corresponding to any one circuit type are measured with precision;

c) measured four-pole parameters are stored;

d) the calibration semiconductor wafer is inserted into the measuring device;

e) the measuring devices are then calibrated to achieve an impedance match at the measuring probe tips which will be brought into contact with the measuring points of the calibration semiconductor wafer.

2. Method according to claim 1, wherein a plurality of comparison circuit units for each circuit type are produced on the calibration semiconductor wafer, and that the four-pole parameters of these comparison circuit units are determined after the calibration of the measuring device with the aid of circuit units whose four-pole parameters have been precisely measured, that these are then stored together with their position on the calibration semiconductor wafer, and that the measuring device is then calibrated by using one of the several comparison circuits provided.

3. Method for the calibration of a measuring device for the measurement of RF parameters of integrated circuits on semiconductor wafers on which there are a large number of such integrated circuits comprising the steps of:

a) a calibration semiconductor wafer is produced, containing integrated comparison circuit units which correspond to a plurality of characteristic circuit types, and which may be contacted via measuring points on the surface of the calibration semiconductor wafer;

b) S parameters of each circuit unit on the calibration semiconductor wafer corresponding to any one circuit type are measured with precision;

c) measured S parameters are stored;

d) the calibration semiconductor wafer is inserted into the measuring device;

e) the measuring devices are then calibrated to achieve an impedance match at the measuring probe tips which will be brought into contact with the measuring points of the calibration semiconductor wafer.

4. Method according to claim 3, wherein a plurality of comparison circuit units for each circuit type are produced on the calibration semiconductor wafer, and that the S parameters of these comparison circuit units are determined after the calibration of the measuring device with the aid of circuit units whose S parameters have been precisely measured, that these are then stored together with their position on the calibration semiconductor wafer, and that the measuring device is then calibrated by using one of the several comparison circuits provided.

5. Method for the calibration of a measuring device for the measurement of RF parameters of integrated circuits on semiconductor wafers on which there are a large number of such integrated circuits comprising the steps of:

a) a calibration semiconductor wafer is produced, containing integrated comparison circuit units which correspond to a plurality of characteristic circuit types, and which may be contacted via measuring points on the surface of the calibration semiconductor wafer;

b) two port parameters of each circuit unit on the calibration semiconductor wafer corresponding to any one circuit type are measured with precision;

c) measured two port parameters are stored;

d) the calibration semiconductor wafer is inserted into the measuring device;

e) the measuring devices are then calibrated to achieve an impedance match at the measuring probe tips which will be brought into contact with the measuring points of the calibration semiconductor wafer.

6. Method according to claim 5, wherein a plurality of comparison circuit units for each circuit type are produced on the calibration semiconductor wafer, and that the two port parameters of these comparison circuit units are determined after the calibration of the measuring device with the aid of circuit units whose two port parameters have been precisely measured, that these are then stored together with their position on the calibration semiconductor wafer, and that the measuring device is then calibrated by using one of the several comparison circuits provided.