Spin-valve type magnetoresistive thin film element comprising free magnetic layer having nife alloy layer

• US 6,301,089 B1
• Filed: 08/02/1999
• Issued: 10/09/2001
• Est. Priority Date: 08/04/1998
• Status: Expired due to Term

• Current Assignee: Alps Alpine Co., Ltd.
• Original Assignee: ALPS Electric Company Limited (Alps Alpine Co., Ltd.)
• Inventors: Hasegawa, Naoya, Saito, Masamichi
• Primary Examiner(s): EVANS, JEFFERSON A
• Application Number:
  US09/366,019
• Time in Patent Office: 799 Days
• Field of Search: 360/324.12, 360/314
• US Class Current: 360/324.12
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3932 Magnetic biasing films
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A spin-valve type magnetoresistive thin film element includes at least one antiferromagnetic layer, a pinned magnetic layer in contact with the antiferromagnetic layer, a nonmagnetic electrically conductive layer formed on the pinned magnetic layer, with a free magnetic layer formed thereon, a bias layer for orienting the magnetization of the free magnetic layer to a direction intersecting the magnetization direction of the pinned magnetic layer, and an electrically conductive layer for supplying a sensing current to the pinned magnetic layer, the nonmagnetic electrically conductive layer and the free magnetic layer. The free magnetic layer is composed of a NiFe alloy film and has a thickness in a range of 30 to 100 Å. When the composition of the NiFe alloy is properly determined, the magnetostriction constant of the free magnetic layer can be controlled to be −2×10⁻⁶to 1×10⁻⁶, and more preferably −0.5×10⁻⁶ to 0, resulting in reduced anisotropic dispersion due to height direction due to the magnetoelastic effect. The element has reduced Barkhausen noise and a high rate of change in resistance.

Claims

1. A spin-valve type magnetoresistive thin film element comprising:

a antiferromagnetic layer;

a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization direction of the pinned magnetic layer being fixed by an anisotropic exchange magnetic field exchanged with the antiferromagnetic layer;

a nonmagnetic electrically conductive layer formed between the pinned magnetic layer and a free magnetic layer;

a bias layer for orienting the magnetization of the free magnetic layer to a direction intersecting the magnetization direction of the pinned magnetic layer; and

an electrically conductive layer for supplying a sensing current to the pinned magnetic layer, the nonmagnetic electrically conductive layer and the free magnetic layer;

wherein the free magnetic layer comprises a NiFe alloy film and has a thickness in a range of 30 to 100 angstrom,

wherein said antiferromagnetic layer comprises two antiferromagnetic layers, one of said two antiferromagnetic layers being formed above and the other of said two antiferromagnetic layers being formed below the free magnetic layer, and

wherein the NiFe alloy film, as the constituent of the free magnetic layer, has a Ni content in a range of 81.7 to 84 atomic percent.

2. A spin-valve type magnetoresistive thin film element according to claim 1, wherein the NiFe alloy film, as the constituent of the free magnetic layer, has a Ni content in a range of 82.3 to 83 atomic percent.

3. A spin-valve type magnetoresistive thin film element according to claim 2, wherein the magnetostriction constant of the free magnetic layer is −

0.5×

10<sup>−

6</sup> to 0.

4. A spin-valve type magnetoresistive thin film element according to claim 1, wherein the antiferromagnetic layers each comprise a PtMn alloy film.

5. A spin-valve type magnetoresistive thin film element according to claim 1, wherein the antiferromagnetic layers each comprise an alloy selected from an X—

Mn alloy wherein X is at least one element selected from the group consisting of Pd, Ru, Ir, Os, and Rh, and a Pt—

Mn—

X′

alloy wherein X′

is at least one element selected from the group consisting of Ni, Pd, Rh, Ru, Ir, Os, Cr, and Co.

6. A spin-valve type magnetoresistive thin film element according to claim 1, wherein the magnetostriction constant of the free magnetic layer is −

2×

10<sup>−

6</sup> to 1×

10<sup>−

6</sup>.

7. A spin-valve type magnetoresistive thin film element according to claim 1, further comprising another nonmagnetic electrically conductive layer formed on the film plane of the free magnetic layer, which is not adjacent to the nonmagnetic electrically conductive layer, another pinned magnetic layer formed on the film plane of the other nonmagnetic electrically conductive layer, which is not adjacent to the free magnetic layer, and another antiferromagnetic layer formed on the film plane of the other pinned magnetic layer, which is not adjacent to the other nonmagnetic electrically conductive layer, the electrically conductive layer supplying a sensing current to the pinned magnetic layer, the nonmagnetic electrically conductive layer, the free magnetic layer, the other nonmagnetic electrically conductive layer, and the other pinned magnetic layer.

8. A spin-valve type magnetoresistive thin film element comprising:

a antiferromagnetic layer;

a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization direction of the pinned magnetic layer being fixed by an anisotropic exchange magnetic field exchanged with the antiferromagnetic layer;

a nonmagnetic electrically conductive layer formed between the pinned magnetic layer and a free magnetic layer;

a bias layer for orienting the magnetization of the free magnetic layer to a direction intersecting the magnetization direction of the pinned magnetic layer; and

an electrically conductive layer for supplying a sensing current to the pinned magnetic layer, the nonmagnetic electrically conductive layer and the free magnetic layer;

wherein the free magnetic layer comprises a layered structure of a NiFe alloy film and a metallic cobalt or cobalt alloy film and has a thickness in a range of 30 to 100 angstrom, the ratio of the thickness of said metallic cobalt or cobalt alloy film to the thickness of the free magnetic layer being in a range of 0 to 0.5,

wherein said antiferromagnetic layer comprises two antiferromagnetic layers, one of said two antiferromagnetic layers being formed above and the other of said two antiferromagnetic layers being formed below the free magnetic layer, and

wherein the NiFe alloy film, as the constituent of the free magnetic layer, has a Ni content in a range of 81 to 83.7 atomic percent.

9. A spin-valve type magnetoresistive thin film element according to claim 8, wherein the thickness of said metallic cobalt or cobalt alloy film is in a range of 0 to 40 Å

.

10. A spin-valve type magnetoresistive thin film element according to claim 8, wherein said metallic cobalt or cobalt alloy film is formed so as to come into contact with the nonmagnetic electrically conductive layer.

11. A spin-valve type magnetoresistive thin film element according to claim 8, wherein the NiFe alloy film, as the constituent of the free magnetic layer, has a Ni content in a range of 81.7 to 82.8 atomic percent.

12. A spin-valve type magnetoresistive thin film element according to claim 11, wherein the magnetostriction constant of the free magnetic layer is −

0.5×

10<sup>−

6</sup> to 0.

13. A spin-valve type magnetoresistive thin film element according to claim 8, wherein the antiferromagnetic layers each comprise a PtMn alloy film.

14. A spin-valve type magnetoresistive thin film element according to claim 8, wherein the antiferromagnetic layers each comprise an alloy selected from an X—

Mn alloy wherein X is at least one element selected from the group consisting of Pd, Ru, Ir, Os, and Rh, and a Pt—

Mn—

X′

alloy wherein X′

is at least one element selected from the group consisting of Ni, Pd, Rh, Ru, Ir, Os, Cr, and Co.

15. A spin-valve type magnetoresistive thin film element according to claim 8, wherein the Co alloy layer comprises a CoFe alloy.

16. A spin-valve type magnetoresistive thin film element according to claim 8, wherein the magnetostriction constant of the free magnetic layer is −

2×

10<sup>−

6</sup> to 1×

10<sup>−

6</sup>.

17. A spin-valve type magnetoresistive thin film element according to claim 8, further comprising another nonmagnetic electrically conductive layer formed on the film plane of the free magnetic layer, which is not adjacent to the nonmagnetic electrically conductive layer, another pinned magnetic layer formed on the film plane of the other nonmagnetic electrically conductive layer, which is not adjacent to the free magnetic layer, and another antiferromagnetic layer formed on the film plane of the other pinned magnetic layer, which is not adjacent to the other nonmagnetic electrically conductive layer, the electrically conductive layer supplying a sensing current to the pinned magnetic layer, the nonmagnetic electrically conductive layer, the free magnetic layer, the other nonmagnetic electrically conductive layer, and the other pinned magnetic layer.

18. A spin-valve type magnetoresistive thin film element according to claim 17, wherein the free magnetic layer comprises a NiFe layer and a pair o the Co or Co alloy layers formed above and below the NiFe alloy, the thickness of the Co or Co alloy layers being the total of the pair of the layers.

19. A spin-valve type magnetoresistive thin film element according to claim 18, wherein each of the Co alloy layers comprises a CoFe alloy.

20. A spin-valve type magnetoresistive thin film element according to claim 19, wherein each of the antiferromagnetic layers comprises a PtMn alloy film.

21. A spin-valve type magnetoresistive thin film element according to claim 19, wherein each of the antiferromagnetic layers comprises an alloy selected from an X—

Mn alloy wherein X is at least one element selected from the group consisting of Pd, Ru, Ir, Os, and Rh, and a Pt—

Mn—

X′

alloy wherein X′

is at least one element selected from the group consisting of Ni, Pd, Rh, Ru, Ir, Os, Cr, and Co.