Device for performing microelectrode recordings through the central channel of a deep-brain stimulation electrode

• US 6,301,492 B1
• Filed: 01/20/2000
• Issued: 10/09/2001
• Est. Priority Date: 01/20/2000
• Status: Expired due to Term

• Current Assignee: Electrocore Technologies LLC
• Original Assignee: Electrocore Technologies LLC
• Inventors: Zonenshayn, Martin
• Primary Examiner(s): Kamm, William E.
• Application Number:
  US09/489,001
• Time in Patent Office: 628 Days
• Field of Search: 600/372, 600/373, 600/378, 600/544
• US Class Current: 600/378
• CPC Class Codes: A61B 5/24 Detecting, measuring or recording bioelectric or biomagnetic signals of the body or parts thereof
• CPC Class Codes: A61B 5/287 Holders for multiple electrodes, e.g. electrode catheters for electrophysiological study [EPS]

Abstract

A combined deep brain stimulation electrode and microelectrode recording probe are provided to reduce the tedium and difficulty associated with the localization of electrical stimulation leads, thereby promoting neurosurgeons to use the most sophisticated methods of electrode placement. The invention includes a deep brain stimulator having an elongate elastomeric sheath which encases a series of individually wound wires extending from one end of the electrode to the other, and terminating in a corresponding series of electrically isolated contact pads. The interior of the elongate sheath is a central channel which is open at both ends. The microelectrode probe is advanced through the central channel and provides one pole of an electrical stimulator tip. One of the deep brain stimulator contact pads serves as the other pole for the microelectrode recording process. Once the proper position is determined, the deep brain stimulator maybe advanced into position, and the microelectrode recording probe may be removed.

Claims

1. A combination microelectrode recording device and deep brain stimulation implant for use in function neurosurgery, comprising:

a deep brain stimulation implant which comprises an elongate tubular structure having a first proximal end and a second distal end and an inner channel defined by an elongate cylindrical sidewall which extends the entire length of the tubular structure, said inner channel terminating at openings at both the proximal and distal ends of the elongate structure, said elongate tubular structure further comprising an insulating material;

said deep brain stimulation implant including at least one electrically conducting wire lead extending within the elongate cylindrical sidewall such that the inner channel surface is electrically insulated from said at least one wire lead, said at least one wire lead terminating at two exterior surface conduction pads, one of which is disposed on the exterior surface of the elongate tubular structure adjacent to the proximal end, and the other conduction pad being disposed disposed on the exterior surface of the elongate tubular structure adjacent to the distal end;

a microelectrode recording lead selectively axially translateably disposed within said inner channel of said deep brain stimulation implant such that said microelectrode recording lead may be selectively advanced or retracted through said inner channel; and

said microelectrode recording lead having an elongate structure with a first proximal end and a second distal end, comprising an electrically conductive material and having a high frequency high impedence material disposed at the distal tip thereof.

2. The combination microelectrode recording device and deep brain stimulation implant as set forth in claim 1, wherein the insulating material of the deep brain stimulation implant comprises an elastomeric material.

3. The combination microelectrode recording device and deep brain stimulation implant as set forth in claim 1, wherein the at least one wire lead disposed in the deep brain stimulation implant is helically wound within said elongate sidewall, extending around the inner channel.

4. The combination microelectrode recording device and deep brain stimulation implant as set forth in claim 1, wherein said microelectrode recording lead includes an insulating sheath surrounding at least a portion thereof.

5. The combination microelectrode recording device and deep brain stimulation implant as set forth in claim 1, wherein said high frequency high impedence material of said tip of said microelectrode recording lead is tungsten.