Method of and apparatus for sealing an hermetic lid to a semiconductor die

• US 6,303,986 B1
• Filed: 07/29/1998
• Issued: 10/16/2001
• Est. Priority Date: 07/29/1998
• Status: Expired due to Term

• Current Assignee: Silicon Light Machines Corporation (SCREEN Holdings Co., Ltd.)
• Original Assignee: Silicon Light Machines Corporation (SCREEN Holdings Co., Ltd.)
• Inventors: Shook, James Gill
• Primary Examiner(s): Whitehead, Jr., Carl
• Assistant Examiner(s): VOCKRODT, JEFF B
• Application Number:
  US09/124,710
• Time in Patent Office: 1,175 Days
• Field of Search: 257/81, 257/98, 257/99, 257/680-681, 257/729-730
• US Class Current: 257/680
• CPC Class Codes: B81B 7/0077 Other packages not provided for in groups B81B7/0035 - B81B7/0074
• CPC Class Codes: H01L 21/50 Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
• CPC Class Codes: H01L 21/67126 Apparatus for sealing, encapsulating, glassing, decapsulating or the like processes H01L23/02, H01L23/28
• CPC Class Codes: H01L 2224/02335 Free-standing redistribution layers
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/81191 wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]

Abstract

A method and apparatus of hermetically passivating a semiconductor device includes sealing a lid directly onto a semiconductor substrate. An active device is formed on the surface of the substrate and is surrounded by a substantially planar lid sealing region, which in turn is surrounded by bonding pads. A first layer of solderable material is formed on the lid scaling region. A lid is provided which has a second layer of solderable material in a configuration corresponding to the first layer. A solder is provided between the first layer and second layer of solderable materials. In the preferred embodiment, the solder is formed over the second layer. Heat is provided to hermetically join the lid to the semiconductor device without requiring a conventional package. Preferably the first and second layers are sandwiches of conventionally known solderable materials which can be processed using conventional semiconductor techniques. An angle between the lid and the semiconductor device can be controlled by adjusting relative widths of one or both the layers of solderable materials.

Claims

1. A microelectronic machine (MEM) having an hermetic seal comprising:

a. a substrate on which is formed an active MEM device;

b. a lid sealing region surrounding the active MEM device and having a passivation layer formed thereon;

c. a first layer of solderable material formed over the lid sealing region;

d. a layer of solder formed over the first layer of solderable material;

e. a second layer of solderable material formed over the solder; and

f. a lid formed over the second layer of solderable material forming an hermetic seal thereby, wherein the passivation layer is configured to position the lid a finite distance from the active MEM device.

2. The MEM according to claim 1 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder and chrome adjacent the lid.

3. The MEM according to claim 1 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder, nickel adjacent the gold and chrome between the nickel and the lid.

4. A microelectronic machine (MEM) having an hermetic seal comprising:

a. a substrate on which is formed an active MEM device;

b. a lid sealing region surrounding the active MEM device;

c. a first layer of solderable material formed over the lid sealing region wherein the first layer of solderable material is a sandwich comprising chrome adjacent the lid sealing region and palladium adjacent the solder;

d. a layer of solder formed over the first layer of solderable material;

e. a second layer of solderable material formed over the solder; and

f. a lid formed over the second layer of solderable material forming an hermetic seal thereby.

5. The MEM according to claim 4 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder and chrome adjacent the lid.

6. The MEM according to claim 4 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder, nickel adjacent the gold and chrome between the nickel and the lid.

7. A microelectronic machine (MEM) having an hermetic seal comprising:

a. a substrate on which is formed an active MEM device;

b. a lid sealing region surrounding the active MEM device;

c. a first layer of solderable material formed over the lid sealing region wherein the first layer of solderable material is a sandwich comprising titanium adjacent the lid sealing region, nickel adjacent the titanium and platinum between the nickel and the solder;

d. a layer of solder formed over the first layer of solderable material;

e. a second layer of solderable material formed over the solder; and

f. a lid formed over the second layer of solderable material forming an hermetic seal thereby.

8. The MEM according to claim 7 where-in the second layer of solderable material is a sandwich comprising gold adjacent the solder and chrome adjacent the lid.

9. The MEM according to claim 7 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder, nickel adjacent the gold and chrome between the nickel and the lid.

10. A display device comprising:

a. a light modulator formed on a semiconductor substrate;

b. a lid sealing region surrounding the light modulator and having a passivation layer formed thereon;

c. a plurality of bond pads positioned adjacent the lid sealing region and away from the light modulator;

d. a first layer of solderable material formed over the lid sealing region;

e. a layer of solder formed over the first layer of solderable material;

f. a second layer of solderable material formed over the solder; and

g. a transparent lid formed over the second layer of solderable material forming an hermetic seal thereby, wherein the passivation layer is configured to position the lid a finite distance from the light modulator.

11. The display device according to claim 10 wherein the light modulator is a diffraction grating light valve.

12. The display device according to claim 10 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder and chrome adjacent the lid.

13. The display device according to claim 10 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder, nickel adjacent the gold and chrome between the nickel and the lid.

14. A display device comprising:

a. light modulator formed on a semiconductor substrate;

b. a lid sealing region surrounding the light modulator;

c. a plurality of bond pads positioned adjacent the lid sealing region and away from the light modulator;

d. a first layer of solderable material formed over the lid sealing region wherein the first layer of solderable material is a sandwich comprising chrome adjacent the lid sealing region and palladium adjacent the solder;

e. a layer of solder formed over the first layer of solderable material;

f. a second layer of solderable material formed over the solder; and

g. a transparent lid formed over the second layer of solderable material forming an hermetic seal thereby.

15. The MEM according to claim 14 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder and chrome adjacent the lid.

16. The MEM according to claim 14 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder, nickel adjacent the gold and chrome between the nickel and the lid.

17. A display device comprising:

a. a light modulator formed on a semiconductor substrate;

b. a lid sealing region surrounding the light modulator;

c. a plurality of bond pads positioned adjacent the lid sealing region and away from the light modulator;

d. a first layer of solderable material formed over the lid sealing region wherein the first layer of solderable material is a sandwich comprising titanium adjacent the lid scaling region, nickel adjacent the titanium and platinum between the nickel and the solder;

e. layer of solder formed over the first layer of solderable material;

f. a second layer of solderable material formed over the solder; and

g. a transparent lid formed over the second layer of solderable material forming an hermetic seal thereby.

18. The MEM according to claim 17 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder and chrome adjacent the lid.

19. The MEM according to claim 17 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder, nickel adjacent the gold and chrome between the nickel and the lid.

20. A microelectronic machine (MEM) having an hermetic seal comprising:

a. a substrate on which is formed an active MEM device;

b. a lid sealing region surrounding the active MEM device and having a passivation layer formed thereon;

c. a layer glass frit formed over the lid sealing region; and

d. a lid formed over the layer of glass frit forming an hermetic seal thereby, wherein the passivation layer is configured to position the lid a finite distance from the active MEM device.

21. A display device comprising:

a. a light modulator formed on a semiconductor substrate;

b. a lid sealing region surrounding the light modulator and having a passivation layer formed thereon;

c. a plurality of bond pads positioned adjacent the lid sealing region and away from the light modulator;

d. a layer of glass frit formed over the lid sealing region; and

e. a transparent lid formed over the layer of glass frit forming an hermetic seal thereby, wherein the passivation layer is configured to position the lid a finite distance from the light modulator.

22. The display device according to claim 21 wherein the light modulator is a diffraction grating light valve.

23. An optical device comprising:

a. a MEM formed on a semiconductor substrate;

b. a lid sealing region surrounding the MEM and having a passivation layer formed thereon;

c. a plurality of bond pads positioned adjacent the lid scaling region and away from the MEM;

d. a first layer of solderable material formed over the lid sealing region;

e. a layer of solder formed over the first layer of solderable material;

f. a second layer of solderable material formed over the solder; and

g. a transparent lid formed over the second layer of solderable material forming an hermetic seal thereby, wherein the passivation layer is configured to position the lid a finite distance from the MEM.

24. The optical device according to claim 23 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder and chrome adjacent the lid.

25. The optical device according to claim 23 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder, nickel adjacent the gold and chrome between the nickel and the lid.

26. An optical device comprising:

a. a MEM formed on a semiconductor substrate;

b. a lid sealing region surrounding the MEM;

c. a plurality of bond pads positioned adjacent the lid sealing region and away from the MEM;

d. a first layer of solderable material formed over the lid sealing region wherein the first layer of solderable material is a sandwich comprising chrome adjacent the lid sealing region and palladium adjacent the solder;

e. a layer of solder formed over the first layer of solderable material;

f. a second layer of solderable material formed over the solder; and

g. a transparent lid formed over the second layer of solderable material forming an hermetic seal thereby.

27. The MEM according to claim 26 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder and chrome adjacent the lid.

28. The MEM according to claim 26 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder, nickel adjacent the gold and chrome between the nickel and the lid.

29. An optical device comprising:

a. a MEM formed on a semiconductor substrate;

b. a lid sealing region surrounding the MEM;

c. a plurality of bond pads positioned adjacent the lid sealing region and away from the MEM;

d. a first layer of solderable material formed over the lid sealing region wherein the first layer of solderable material is a sandwich comprising titanium adjacent the lid sealing region, nickel adjacent the titanium and platinum between the nickel and the solder;

e. a layer of solder formed over the first layer of solderable material;

f. a second layer of solderable material formed over the solder; and

g. a transparent lid formed over the second layer of solderable material forming an hermetic seal thereby.

30. The MEM according to claim 29 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder and chrome adjacent the lid.

31. The MEM according to claim 29 wherein the second layer of solderable material is a sandwich comprising gold adjacent the solder, nickel adjacent the gold and chrome between the nickel and the lid.

32. An optical device comprising:

a. a MEM formed on a semiconductor substrate;

b. a lid sealing region surrounding the MEM and having a passivation layer formed thereon;

c. a plurality of bond pads positioned adjacent the lid sealing region and away from the MEM;

d. a layer of glass frit formed over the lid sealing region; and

e. a transparent lid formed over the layer of glass frit forming an hermetic seal thereby wherein the passivation layer is configured to position the lid a finite distance from the MEM.