Metal complexes with chelating C-,N-donor ligands for forming metal-containing films

• US 6,306,217 B1
• Filed: 08/30/2000
• Issued: 10/23/2001
• Est. Priority Date: 09/01/1998
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Vaartstra, Brian A., Uhlenbrock, Stefan
• Primary Examiner(s): BUEKER, RICHARD R
• Application Number:
  US09/650,601
• Time in Patent Office: 419 Days
• Field of Search: 118/715, 118/726
• US Class Current: 118/726
• CPC Class Codes: C23C 16/18 from metallo-organic compounds

Abstract

A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Claims

1. A chemical vapor deposition system comprising:

a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;

a vessel containing a precursor composition comprising one or more complexes of the formula;

 

wherein;

M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals;

each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R³ and R⁴ are both methyl and optionally tie R groups are replaced by multiple bonds between backbone atoms in the structure;

each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide;

x=1 to 3;

n=0 to 4; and

y=0 to 4.

2. The chemical vapor deposition systemn of claim 1 wherein the system is adapted to form a metal-containing fim by vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a vaporization technique.

3. The chemical vapor deposition system of claim 2 wherein the vaporization technique comprises flash vaporization, bubbling, micro-droplet formation, or combinations thereof.

4. The chemical vapor deposition system of claim 2 wherein the metal-containing film is a single transition metal or a transition metal alloy film.

5. The chemical vapor deposition system of claim 2 wherein the precursor composition is vaporized in the presence of a reaction gas, an inert carrier gas, or a combination thereof.

6. The chemical vapor deposition system of claim 5 wherein the reaction gas is SiH₄, Si₂H₆, NH₃, N₂H₄, PH₃, AsH₃, GeH₄, t-BuSbMe₂, H₂S, H₂Se, CO, CH₄, or Te(allyl)₂.

7. The chemical vapor deposition system of claim 1 wherein the semiconductor substrate is a silicon wafer.

8. The chemical vapor deposition system of claim 1 wherein M is selected from the group consisting of Co, Rh, Ir, Fe, Ru, Os, Ni, Pd, and Pt.

9. The chemical vapor deposition system of claim 1 wherein each R¹, R², R⁵, and R⁶ is hydrogen and each R⁷ and R⁸ is a methyl group.

10. The chemical vapor deposition system of claim 1 wherein each R¹and R² is SiMe₃, each R⁵ and R⁶ is hydrogen, and each R⁷ and R⁸ is a methyl group.

11. The chemical vapor deposition system of claim 1 wherein the precursor composition is a liquid.

12. The chemical vapor deposition system of claim 1 further comprising a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.

13. A chemical vapor deposition system comprising:

a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;

a vessel containing a precursor composition comprising one or more organic solvents and one or more complexes of the formula;

 

wherein;

M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals;

each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R³ and R⁴ are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure;

each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide;

x=1 to 3;

n=0 to 4; and

y=0 to 4.

14. The chemical vapor deposition system of claim 13 wherein each R¹, R², R⁵, and R⁶ is hydrogen and each R⁷ and R⁸ is a methyl group.

15. The chemical vapor deposition system of claim 13 wherein each R¹ and R² is SiMe₃, each R⁵ and R⁶ is hydrogen, and each R⁷ and R⁸ is a methyl group.

16. The chemical vapor deposition system of claim 13 further comprising a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.

17. A chemical vapor deposition system comprising:

a deposition chamber having a substrate positioned therein;

a vessel containing a precursor composition comprising one or more complexes of the formula;

 

wherein;

M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals;

each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R³ and R⁴ are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure;

each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide;

x=1 to 3;

n=0 to 4; and

y=0 to 4.

18. The chemical vapor deposition system of claim 17 wherein the system is adapted to form a metal-containing film by vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique.

19. The chemical vapor deposition system of claim 17 wherein the precursor composition is a liquid.

20. The chemical vapor deposition system of claim 17 wherein each R¹, R², R⁵, and R⁶ is hydrogen and each R⁷ and R⁸ is a methyl group.

21. The chemical vapor deposition system of claim 17 wherein each R¹ and R² is SiMe₃, each R⁵ and R⁶ is hydrogen, and each R⁷ and R⁸ is a methyl group.

22. The chemical vapor deposition system of claim 17 further comprising a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.

23. A chemical vapor deposition system comprising;

a deposition chamber having a substrate positioned therein;

a vessel containing a precursor composition comprising one or more organic solvents and one or more complexes of the formula;

 

wherein;

M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals;

each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R³ and R⁴ are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure;

each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide;

x=1 to 3;

n=0 to 4; and

y=0 to 4.

24. The chemical vapor deposition system of claim 23 wherein each R¹, R², R⁵, and R⁶ is hydrogen and each R⁷ and R⁸ is a methyl group.

25. The chemical vapor deposition system of claim 23 wherein each R¹ and R² is SiMe₃, each R⁵ and R⁶ is hydrogen, and each R⁷ and R⁸ is a methyl group.

26. The chemical vapor deposition system of claim 23 further comprising a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.

27. A chemical vapor deposition system comprising:

a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;

a vessel containing a precursor composition comprising one or more complexes of the formula;

 

wherein;

M is a transition metal selected from the group consisting of IB, IIB, IIIB, IB, IVB, VB, VIB, VIIB, and VIIIB metals; and

each R¹ and R² group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group.

28. The chemical vapor deposition system of claim 27 further comprising a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.

29. A chemical vapor deposition system comprising:

a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;

a vessel containing a precursor composition comprising one or more organic solvents and one or more complexes of the formula;

 

wherein;

M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; and

each R¹ and R² group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group.

30. The chemical vapor deposition system of claim 29 further comprising a source of an inert carrier gas for the transferring the precursor composition to the chemical vapor deposition chamber.

31. A chemical vapor deposition system comprising:

a deposition chamber having a substrate positioned therein;

a vessel containing a precursor composition comprising one or more complexes of the formula;

 

wherein;

M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; and

each R¹ and R² group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group.

32. The chemical vapor deposition system of claim 31 further comprising a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.

33. A chemical vapor deposition system comprising:

a deposition chamber having a substrate positioned therein;

a vessel containing a precursor composition comprising one or more organic solvents and one or more complexes of the formula;

 

wherein;

M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; and

each R¹ and R² group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group.

34. The chemical vapor deposition system of claim 33 further comprising a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.