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Bonding pad structure to prevent inter-metal dielectric cracking and to improve bondability

  • US 6,306,750 B1
  • Filed: 01/18/2000
  • Issued: 10/23/2001
  • Est. Priority Date: 01/18/2000
  • Status: Expired due to Term
First Claim
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1. A method of creating a bond pad structure, on a semiconductor substrate, comprising the steps of:

  • providing an upper level, metal interconnect structure, overlying, and contacting, underlying conductive regions, on, or in, said semiconductor substrate;

    forming an inter-metal dielectric, (IMD), layer, on said upper level, metal interconnect structure;

    performing an etching procedure to create a mesh pattern opening, in said IMD layer, exposing regions of the top surface of said upper level, metal interconnect structure, and creating unetched, isolated islands of said IMD layer, depositing a metal layer, on the top surface of said isolated islands of said IMD layer, and partially filling said mesh pattern opening;

    removing portions of said metal layer from the top surface of said isolated islands of said IMD layer, creating a metal mesh structure, in said mesh pattern opening, with the metal mash structure featuring a notched, or indented top surface, resulting from the partial metal fill of said mesh pattern opening;

    forming said bond pad structure, featuring a roughened top surface topography, as a result of the underlying notched, or indented surface, of said metal mesh structure; and

    forming a wire bond on said bond pad structure.

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