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Method for endpoint detection during dry etch of submicron features in a semiconductor device

  • US 6,306,755 B1
  • Filed: 05/14/1999
  • Issued: 10/23/2001
  • Est. Priority Date: 05/14/1999
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device comprising:

  • forming a conductive underlayer;

    forming a selective layer over the conductive underlayer;

    dry etching at least one sub-micron path;

    concurrently dry etching at least one dummy path;

    detecting the endpoint of the etching process; and

    stopping the etching process responsive to the optical detection of the endpoint.

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