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Method for production of semiconductor device

  • US 6,306,756 B1
  • Filed: 05/26/2000
  • Issued: 10/23/2001
  • Est. Priority Date: 06/21/1994
  • Status: Expired due to Term
First Claim
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1. A method for manufacturing a semiconductor device having an electrode line formed on a semiconducting substrate, comprising:

  • forming at least either of a trench and a contact hole in a region destined to form said electrode line on said semiconducting substrate, heating said semiconducting substrate having at least either of said trench and said contact hole formed thereon and supplying at least an oxidizing gas and, at the same time, depositing a conductive film selected from the group consisting of Cu, Ag, and Au, causing at least one member selected from the group consisting of Cu, Ag, and Au to flow into said trench and/or said contact hole thereby forming said conductive film comprising at least one member selected from the group consisting of Cu, Ag, and Au, and removing by polishing the part of said conductive film falling outside the region destined to form said electrode line thereby completing said electrode line.

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