Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method

• US 6,307,194 B1
• Filed: 06/07/1999
• Issued: 10/23/2001
• Est. Priority Date: 06/07/1999
• Status: Expired due to Term

• Current Assignee: DRS Network & Imaging Systems, LLC (Leonardo S.p.A.)
• Original Assignee: The Boeing Co.
• Inventors: Fitzgibbons, Eugene T., Han, Chien-Jih
• Primary Examiner(s): LE, QUE TAN
• Application Number:
  US09/326,937
• Time in Patent Office: 869 Days
• Field of Search: 250/208.1, 250/216, 250/238, 250/214.1, 250/332, 250/338.1, 250/339.03, 250/339.04
• US Class Current: 250/208.1
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Abstract

A pixel structure is provided that has a substrate and a bolometer disposed upon the substrate that includes a transducer and an absorber that have been spaced apart from each other and from the substrate so as to permit the transducer and the absorber to be separately optimized. For example, the absorption characteristics of the bolometer can be maximized, while concurrently minimizing the thermal loss to the substrate. While the absorber is spaced from the transducer, the absorber is in thermal contact with the transducer such that radiation absorbed by the absorber also heats the transducer. In this regard, the bolometer also includes a thermally conductive post extending from the transducer to the absorber. Since the transducer has an electrical resistance that varies in response to changes in the temperature of the transducer, heating of the transducer in response to the absorption of radiation by the absorber causes the electrical resistance of the transducer to correspondingly vary in a predetermined manner. By measuring the change in electrical resistance of the transducer, such as by passing a known current therethrough, a precise measurement of the radiation absorbed by the absorber can be determined. In addition to the pixel structure, a method is provided for fabricating a pixel structure having a bolometer in which the transducer and absorber are spaced apart so as to likewise facilitate the independent optimization of the characteristics of both the absorber and the transducer.

Claims

1. A pixel structure of a bolometer-based focal plane array for preferentially detecting radiation of a predetermined wavelength comprising:

a substrate; and

a bolometer comprising;

a transducer supported in a spaced apart relationship with respect to said substrate to define a first there between, said transducer having an electrical resistance that varies in response to changes in the temperature of said transducer; and

an absorber supported in a spaced apart relationship with respect to both said substrate and said transducer to thereby define a second gap between said absorber and said transducer, said absorber being in thermal contact with said transducer, thereby permitting radiation absorbed by said absorber to heat said transducer and cause the electrical resistance of said transducer to correspondingly vary,

wherein a combined thickness of the first and second gaps has a predefined relationship to the predetermined wavelength of radiation that the pixel structure preferentially detects.

2. A pixel structure according to claim 1 wherein said bolometer further comprises a post extending between said transducer and said absorber for supporting said absorber in a spaced apart relationship with respect to said transducer, said post being thermally conductive to thereby establish thermal contact between said absorber and said transducer.

3. A pixel structure according to claim 1 wherein said absorber and said transducer have respective surface areas, and wherein the surface area of said absorber is greater than the surface area of said transducer.

4. A pixel structure according to claim 3 wherein said absorber covers said transducer in an umbrella-like configuration.

5. A pixel structure according to claim 1 wherein the combined thickness of the first and second gaps is a quarter of the predetermined wavelength of radiation that the pixel structure preferentially detects.

6. A pixel structure according to claim 1 wherein said bolometer further comprises a reflector disposed upon said substrate underlying said transducer.

7. A pixel structure according to claim 6 wherein said reflector and said absorber define an optical cavity having a length that is selected so as to tune said bolometer to detect radiation of a predetermined wavelength.

8. A pixel structure according to claim 1 wherein said bolometer further comprises at least one leg extending between said transducer and said substrate to support said transducer in the spaced apart relationship with respect to said substrate.

9. A pixel structure according to claim 8 wherein said absorber covers both said transducer and said at least one leg in an umbrella-like configuration.

10. A pixel structure comprising:

a substrate; and

a bolometer comprising;

a transducer supported in a spaced apart relationship with respect to said substrate, said transducer having an electrical resistance that varies in response to changes in the temperature of said transducer;

a post extending outwardly from said transducer in a direction away from said substrate, said post being thermally conductive;

an absorber supported upon said post over said transducer, said absorber adapted to absorb radiation and to transfer thermal energy via said post to said transducer in response to the absorbed radiation, thereby causing the electrical resistance of said transducer to correspondingly vary; and

an absorption enhancement layer disposed on said absorber in a facing relationship with said transducer, said absorption enhancement layer having an impedance that matches an impedance of free space.

11. A pixel structure according to claim 10 wherein said absorber and said transducer have respective surface areas, wherein the surface area of said absorber is greater than the surface area of said transducer, and wherein said absorber covers said transducer in an umbrella-like configuration.

12. A pixel structure according to claim 10 wherein said absorber and said transducer are disposed in respective planes and are separated by a gap.

13. A pixel structure according to claim 10 wherein said bolometer further comprises a reflector upon said substrate underlying said transducer.

14. A pixel structure according to claim 13 wherein said reflector and said absorber define an optical cavity having a length that is selected so as to tune said bolometer to detect radiation of a predetermined wavelength.

15. A pixel structure according to claim 10 wherein said bolometer further comprises at least one leg extending between said transducer and said substrate to support said transducer in a spaced apart relationship with respect to said substrate.

16. A pixel structure according to claim 15 wherein said absorber covers both said transducer and said at least one leg in an umbrella-like configuration.

17. A method of fabricating a pixel structure for preferentially detecting radiation having a predetermined wavelength comprising:

depositing a first sacrificial layer upon a substrate having a first thickness;

depositing a transducer material upon said first sacrificial layer, wherein the transducer material has an electrical resistance that varies in response to changes in the temperature of the transducer material;

depositing a second sacrificial layer upon the transducer material having a second thickness;

depositing an absorber material upon the second sacrificial layer, wherein the absorber material is adapted to absorb radiation and to correspondingly increase in temperature; and

removing the first and second sacrificial layers to thereby space the transducer material and the absorber material apart from one another,

wherein depositing the first and second sacrificial layers is preceded by selecting the first and second thicknesses such that the combined thickness has a predefined relationship to the predetermined wavelength of radiation that the pixel structure preferentially detects.

18. A method according to claim 17 further comprising:

defining an opening through the second sacrificial layer, prior to depositing the absorber material; and

filling the opening with a thermally conductive material to thereby form a post for supporting the absorber material in a spaced apart relationship with respect to the transducer material.

19. A method of fabricating a pixel structure comprising:

depositing a first sacrificial layer upon a substrate;

depositing a transducer material upon said first sacrificial layer, wherein the transducer material has an electrical resistance that varies in response to changes in the temperature of the transducer material;

depositing a second sacrificial layer upon the transducer material;

depositing an absorption enhancement layer upon the second sacrificial layer that has an impedance that matches an impedance of free space;

depositing an absorber material upon the absorption enhancement layer, wherein the absorber material is adapted to absorb radiation and to correspondingly increase in temperature; and

removing the first and second sacrificial layers such that the transducer material and the absorber material are spaced apart from one another.