Microlens array with improved fill factor

• US 6,307,243 B1
• Filed: 07/19/1999
• Issued: 10/23/2001
• Est. Priority Date: 07/19/1999
• Status: Expired due to Term

• Current Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Original Assignee: Micron Technology, Inc.
• Inventors: Rhodes, Howard E.
• Primary Examiner(s): Ng&ocirc ; , Ng&acirc ;n V.
• Application Number:
  US09/357,168
• Time in Patent Office: 827 Days
• Field of Search: 257/232, 257/233, 257/432
• US Class Current: 257/432
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

A microlens array for use in a solid-state imager having an improved fill factor. The microlens array includes a plurality of microlenses, each consisting of two layers: a lower refractive layer, and an upper insulation layer. The refractive layer is formed of transparent material with a suitable refractive index which may be optical thermoplastic, polyimide, thermoset resin, photosensitive gelatin, or radiation curable resin. The insulation layer is formed of transparent insulating material such as silicon oxide, silicon nitride, or silicon oxynitride. Due to the refraction of light through the insulation layer, more light at the pixel edges is captured by each microlens, thereby improving the fill factor of the microlens array. Also disclosed are methods for forming the microlens array.

Claims

1. A microlens array for use in an imaging device comprising:

an imaging array containing photosensitive elements;

a light condensing layer provided on said imaging array, said light condensing layer having a plurality of microlenses each corresponding to one or more pixels of said array, and wherein said microlenses have convex surfaces facing away from said imaging array; and

a transparent insulation layer for increasing the proportion of radiation incident on said photosensitive elements of said imaging array, said transparent insulation layer being formed on said light condensing layer by a low temperature process, and wherein said transparent insulation layer has convex surfaces facing away from said microlenses, and wherein said transparent insulation layer includes silicon insulator material.

2. The microlens array of claim 1, wherein said light condensing layer is a layer of optical thermoplastic.

3. The microlens array of claim 2, wherein the optical thermoplastic is selected from the group consisting of polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, and polystyrene.

4. The microlens array of claim 1, wherein said light condensing layer is a layer of polyimide.

5. The microlens array of claim 1, wherein said light condensing layer is a layer of thermoset resin.

6. The microlens array of claim 5, wherein the thermoset resin is an epoxy resin.

7. The microlens array of claim 1, wherein said light condensing layer is a layer of photosensitive gelatin.

8. The microlens array of claim 1, wherein said light condensing layer is a layer of radiation curable resin.

9. The microlens array of claim 8, wherein the radiation curable resin is selected from the group consisting of acrylate, methacrylate, urethane acrylate, epoxy acrylate, and polyester acrylate.

10. The microlens array of claim 1, wherein said transparent insulation layer is formed by a low temperature plasma deposition process.

11. The microlens array of claim 10, wherein the low temperature plasma deposition process is performed at temperatures within the range of approximately 200 to 400 degrees Celsius.

12. The microlens array of claim 1, wherein said transparent insulation layer is a layer of silicon oxide.

13. The microlens array of claim 1, wherein said transparent insulation layer is a layer of silicon nitride.

14. The microlens array of claim 1, wherein said transparent insulation layer is a layer of silicon oxynitride.

15. The microlens array of claim 1, wherein the microlenses are circular lenses.

16. The microlens array of claim 1, wherein the microlenses are lenticular lenses.

17. The microlens array of claim 1, wherein the microlenses are ovoid lenses.

18. The microlens array of claim 1, wherein the microlenses are rectangular lenses.

19. The microlens array of claim 1, wherein the microlenses are hexagonal lenses.

20. The microlens array of claim 1, wherein said microlens has a thickness of from about 0.3 μ

m to about 5.0 μ

m.

21. The microlens array of claim 1, further comprising a spacer layer under said light condensing layer.

22. The microlens array of claim 21, wherein said spacer layer has a thickness of from about 1 μ

m to about 20 μ

m.

23. A microlens array for use in an imaging device comprising:

an array of piano-convex microlenses for converging light onto photosensitive elements, said array of plano-convex microlenses comprising refractive portions having convex surfaces, and a transparent insulation layer for increasing the proportion of radiation incident on said photosensitive elements, said transparent insulation layer being located on said convex surfaces of said refractive portions, and wherein said transparent insulation layer is formed on said convex surfaces by a low temperature process, and wherein said transparent insulation layer has convex surfaces facing away from said refractive portions of said microlenses, and wherein said transparent insulation layer includes silicon insulator material.

24. The microlens array of claim 23 wherein the refractive layer is a layer of optical thermoplastic.

25. The microlens array of claim 24 wherein the optical thermoplastic is selected from the group consisting of polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, and polystyrene.

26. The microlens array of claim 23 wherein the refractive layer is a layer of polyimide.

27. The microlens array of claim 23 wherein the refractive layer is a layer of thermoset resin.

28. The microlens array of claim 23 wherein the refractive layer is a layer of photosensitive gelatin.

29. The microlens array of claim 23 wherein the refractive layer is a layer of radiation curable resin.

30. The microlens array of claim 29 wherein the radiation curable resin is selected from the group consisting of acrylate, methacrylate, urethane acrylate, epoxy acrylate, and polyester acrylate.

31. The microlens array of claim 23 wherein the transparent insulation layer is formed by a low temperature plasma deposition process.

32. The microlens array of claim 31 wherein the low temperature plasma deposition process is performed at temperatures within the range of approximately 200 to 400 degrees Celsius.

33. The microlens array of claim 23 wherein the transparent insulation layer is a layer of silicon oxide.

34. The microlens array of claim 23 wherein the transparent insulation layer is a layer of silicon nitride.

35. The microlens array of claim 23 wherein the transparent insulation layer is a layer of silicon oxynitride.

36. The microlens array of claim 23 wherein the microlenses are circular lenses.

37. The microlens array of claim 23 wherein the microlenses are lenticular lenses.

38. The microlens array of claim 23 wherein the microlenses are ovoid lenses.

39. The microlens array of claim 23 wherein the microlenses are rectangular lenses.

40. The microlens array of claim 23 wherein the microlenses are hexagonal lenses.

41. The microlens array of claim 23 wherein said microlens has a thickness of from about 0.3 μ

m to about 5.0 μ

m.

42. The microlens array of claim 23 further comprising a spacer layer under said light condensing layer.

43. The microlens array of claim 42 wherein said spacer layer has a thickness of from about 1 μ

m to about 20 μ

m.

44. A solid-state imager comprising:

an array of pixel sensor cells formed at an upper surface of a substrate;

a protective layer formed over said array; and

an array of microlenses formed on said protective layer for converging light on said pixel sensor cells, each microlens comprising a transparent insulation layer formed over a refractive layer, and wherein said transparent insulation layer is formed on said microlenses by a low temperature process, and wherein said transparent insulation layer has curved surfaces, and wherein said refractive layer is located between pixel sensor cells and said transparent insulation layer, such that said light is incident on said curved surfaces of said transparent insulation layer, and wherein said microlenses are arranged such that said insulation layer captures light at the edges of said pixel sensor cells, and wherein said transparent insulation layer includes silicon insulator material.

45. The imager of claim 44, wherein the imager is a CMOS imager.

46. The imager of claim 44, wherein the imager is a CCD imager.

47. The imager of claim 44, wherein said array of microlenses is formed so that each pixel of said array of pixel sensor cells has a corresponding microlens formed above it.

48. The imager of claim 44, further comprising a color filter layer formed over said protective layer and under said array of microlenses.

49. The imager of claim 44, wherein the refractive layer is a layer of material selected from the group consisting of optical thermoplastic, polyimide, thermoset resin, photosensitive gelatin, and radiation curable resin.

50. The imager of claim 49, wherein the optical thermoplastic is selected from the group consisting of polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, and polystyrene.

51. The imager of claim 49, wherein the radiation curable resin is selected from the group consisting of acrylate, methacrylate, urethane acrylate, epoxy acrylate, and polyester acrylate.

52. The imager of claim 44, wherein the transparent insulation layer is formed by a low temperature plasma deposition process.

53. The imager of claim 52, wherein the low temperature plasma deposition process is performed at temperatures within the range of approximately 200 to 400 degrees Celsius.

54. The imager of claim 44, wherein the transparent insulation layer is a layer of silicon oxide.

55. The imager of claim 44, wherein the transparent insulation layer is a layer of silicon nitride.

56. The imager of claim 44, wherein the transparent insulation layer is a layer of silicon oxynitride.

57. An imager comprising:

an imaging array having a plurality of pixel sensor cells formed at an upper surface of a substrate and providing output data representing an image;

an array of microlenses formed on the imaging array, wherein each microlens has a transparent insulation layer vapor deposited by a low temperature process on a convex surface of a refractive layer, and wherein said transparent insulation layer includes silicon insulator material, and wherein said transparent insulation layer has a concave surface and a convex surface, with said concave surface of said transparent insulation layer being located between said convex surface of said refractive layer and said convex surface of said transparent insulation layer, such that said transparent insulation layer increases the proportion of radiation incident on said pixel sensor cells; and

a processor for receiving and processing data representing the image.

58. The imager of claim 57, wherein said arrays and said processor are formed on a single substrate.

59. The imager of claim 57, wherein said arrays are formed on a first substrate and said processor is formed on a second substrate.