Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage

• US 6,307,322 B1
• Filed: 12/28/1999
• Issued: 10/23/2001
• Est. Priority Date: 12/28/1999
• Status: Expired due to Term

• Current Assignee: Transpacific Infinity LLC
• Original Assignee: Sarnoff Corporation (SRI International, Inc.)
• Inventors: Shen, Zilan, Stewart, Roger Green, Kane, Michael Gillis, Dawson, Robin Mark Adrian, Ipri, Alfred Charles
• Primary Examiner(s): VU, DAVID HUNG
• Application Number:
  US09/473,504
• Time in Patent Office: 665 Days
• Field of Search: 315/169.1, 315/169.3, 345/76, 345/77
• US Class Current: 315/169.1
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01S 5/042 Electrical excitation ; Circuits therefor monolithically integrated laser drive components H01S5/0261

Abstract

A circuit design technique polysilicon thin-film transistor (TFT) circuitry produces circuits that are relatively less sensitive to threshold variations among the TFT'"'"'s than circuits designed using conventional techniques. The circuit is designed such that thin-film transistors that are sensitive to threshold variations are made larger than other thin-film transistors in the circuitry to minimize threshold variations among similar transistors implemented in the circuit. In one embodiment, a pixel structure for an active matrix display device implemented in polysilicon includes two transistors, a select transistor and a drive transistor. The drive transistor in the pixel structure is a thin film metal oxide silicon (MOS) transistor that includes a gate to source capacitance sufficient to hold an electrical potential which keeps the transistor in a conducting state for an image field interval. One embodiment of the pixel structure includes only the select transistor and the drive transistor. The pixel storage capacitance is entirely realized by the gate to source capacitance of the drive transistor. Another embodiment of the pixel structure includes a capacitor which is much smaller than the capacitor of a conventional active matrix pixel structure. This capacitor holds the pixel in a non-illuminated state when the drive transistor is turned off. This pixel structure may be used with any display technology that uses an active matrix and stores image data on a capacitance in the pixel, including without limitation, organic light emitting diodes, electroluminescent devices, and inorganic light emitting diodes.

Claims

1. A method for implementing circuitry including polysilicon thin-film transistors (TFT'"'"'s) according to a semiconductor process including the steps of:

analyzing the circuitry to identify TFT'"'"'s that are sensitive to variations in gate to source threshold potential;

preparing a layout for the circuitry using design rules associated with the semiconductor process; and

increasing each of the identified TFT'"'"'s in size relative to other TFT'"'"'s in the circuitry.

2. A method according to claim 1, wherein each of the TFT'"'"'s in the layout has a length to width ratio and the step of increasing the identified TFT'"'"'s in size preserves the length to width ratio of the identified TFT'"'"'s.

3. A method according to claim 1, wherein the circuitry is the pixel structure of an active matrix display and the identified TFT'"'"'s are the drive transistors of the pixel structure.

4. A pixel structure for an active matrix display comprising:

a drive transistor having a principal conduction path coupled between a source of operational power and an active pixel element, the drive transistor having a control electrode;

a select transistor having a principal conductive path between a data line and the control electrode of the drive transistor, and having a further control electrode coupled to a select line;

wherein the control electrode of the drive transistor has a size such that the control electrode exhibits sufficient capacitance to store a control value received from the data line via the select transistor, the stored control value causing the drive transistor to activate the active pixel element at a predetermined level of illumination for one image field interval.

5. A pixel structure according to claim 4, further including a capacitor, coupled between the control electrode of the drive transistor and the source of operational potential for storing the control value, wherein the stored control value is sufficient to hold the drive transistor in an inactive state for the image field interval.

6. A pixel structure according to claim 4 wherein the pixel structure is used in an active matrix organic light emitting diode (AMOLED) display and the charge value stored on the gate to source capacitance of the drive transistor controls the level of current that is applied to the organic light emitting diode (OLED) device.

7. A pixel structure according to claim 6 wherein the width to length ratio of the drive transistor is selected to provide a predetermined current level to the OLED device.

8. A pixel structure according to claim 7 wherein the control electrode of the drive transistor forms a capacitance with the principal conductive path of the drive transistor when the drive transistor conducts current and forms a capacitance with a further electrode coupled to a predetermined electric potential when the drive transistor is not conducting current.

9. A pixel structure according to claim 8 wherein the drive transistor is a thin film transistor and the further electrode is a ground plane.

10. A pixel structure according to claim 8, wherein the drive transistor is a metal oxide semiconductor (MOS) transistor formed on a substrate and the further electrode is the substrate.

11. A pixel structure for an active matrix display having thin-film transistors (TFT'"'"'s) implemented in polysilicon comprising:

an active pixel element,

a drive TFT having a source electrode coupled to a source of operational power and a drain electrode coupled to the active pixel element, the drive TFT having a control electrode and exhibiting a gate to source threshold potential;

a select TFT having a principal conductive path between a data line and the control electrode of the drive TFT, and having a further control electrode coupled to a select line; and

a capacitor, coupled between the control electrode of the drive transistor and the source of operational power;

wherein the drive TFT occupies an area in the pixel structure that is sufficient to produce a variability in the gate to source threshold potential, among other pixels in the display, of less than 0.2 v.

12. A pixel structure according to claim 11, wherein the drive TFT is designed with a length to width ratio which produces a predetermined current response characteristic.

13. A pixel structure according to claim 12, wherein the active pixel element is an organic light emitting diode (OLED) device.