Rapid thermal processing chamber for processing multiple wafers

• US 6,310,328 B1
• Filed: 12/10/1998
• Issued: 10/30/2001
• Est. Priority Date: 12/10/1998
• Status: Expired due to Fees

• Current Assignee: STEAG RTP Systems, Inc. (KSBG Kommunale Beteiligungsgesellschaft GmbH & Company KG)
• Original Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Inventors: Gat, Arnon
• Primary Examiner(s): Jeffery, John A.
• Application Number:
  US09/208,958
• Time in Patent Office: 1,055 Days
• Field of Search: 392/418, 392/416, 118/725, 118/715, 118/728, 118/50.1, 118/729, 118/724, 219/405, 219/411, 219/390, 250/492.2, 250/492.22, 362/297, 362/298, 362/301, 427/248.1
• US Class Current: 219/411
• CPC Class Codes: H01L 21/67115 mainly by radiation

Abstract

A system for heating a plurality of semiconductor wafers at the same time includes a thermal processing chamber containing a substrate holder designed to hold from about three to about ten wafers. The thermal processing chamber is surrounded by light energy sources which heat the wafers contained in the chamber. The light energy sources can heat the wafers directly or indirectly. In one embodiment, the thermal processing chamber includes a liner made from a heat conductive material. The light energy sources are used to heat the liner which, in turn, heats the wafers. In an alternative embodiment, energy dispersing plates are placed in between adjacent wafers. Light energy being emitted by the light energy sources enters the energy dispersing members and gets distributed across the surface of adjacent wafers for heating the wafers uniformly.

Claims

1. A multiwafer thermal processing system comprising:

a thermal processing chamber adapted to receive semiconductor wafers;

a substrate holder contained within said thermal processing chamber, said substrate holder being configured to hold a plurality of semiconductor wafers, said wafers being held in a stacked arrangement wherein adjacent wafers are spaced apart a determined distance;

a plurality of energy dispersing members positioned within said thermal processing chamber so as to be placed in between adjacent semiconductor wafers held on said substrate holder, said energy dispersing members being designed to refract light energy; and

a plurality of light energy sources surrounding said thermal processing chamber for heating semiconductor wafers held on said substrate holder, at least certain of said light energy sources being positioned to emit light energy directly into said energy dispersing members, wherein said energy dispersing members redirect said light energy onto adjacent wafers.

2. A system as defined in claim 1, further comprising:

at least one temperature sensing device for monitoring the temperature of said semiconductor wafers held on said substrate holder; and

a controller in communication with said at least one temperature sensing device and said light energy sources, said controller being configured to control the amount of light energy being emitted by said light energy sources in response to temperature information received from said at least one temperature sensing device.

3. A system as defined in claim 1, wherein said energy dispersing members are made from a material comprising quartz containing areas having a different index of refraction than said quartz.

4. A system as defined in claim 3, wherein said areas having a different index of refraction are made from a glass.

5. A system as defined in claim 1, wherein said energy dispersing members comprise quartz plates having a physical shape designed to refract light.

6. A system as defined in claim 1, wherein said light energy sources comprise lamps having an elongated housing, said lamps being positioned such that said elongated housing faces said thermal processing chamber.

7. A system as defined in claim 1, wherein said light energy sources positioned to emit light energy directly onto said energy dispersing members comprise light energy sources located along the periphery of said energy dispersing members.

8. A system as defined in claim 1, further comprising reflectors for reflecting light energy being emitted by said light energy sources, said reflectors being designed to direct light energy into said thermal processing chamber.

9. A system as defined in claim 1, wherein said substrate holder is configured to hold from about 3 to about 10 semiconductor wafers.

10. A system as defined in claim 1, wherein said energy dispersing members comprise plates spaced in between adjacent semiconductor wafers, each of said plates having a top surface, a bottom surface, and a side surface, wherein said light energy sources are positioned adjacent to said side surface for emitting light energy into said plate, said system further including reflectors being positioned next to said light energy sources for directing light energy into said energy dispersing members.

11. A system as defined in claim 1, further comprising a gas inlet and a gas outlet in communication with said thermal processing chamber for circulating gases therethrough.