High frequency switch

• US 6,310,508 B1
• Filed: 08/24/2000
• Issued: 10/30/2001
• Est. Priority Date: 08/24/2000
• Status: Expired due to Fees

• Current Assignee: Agilent Technologies Europe BV (Agilent Technologies, Inc.)
• Original Assignee: Agilent Technologies, Inc.
• Inventors: Westerman, Stephen J.
• Primary Examiner(s): Cunningham, Terry D.
• Assistant Examiner(s): NGUYEN, LONG T
• Application Number:
  US09/645,803
• Time in Patent Office: 432 Days
• Field of Search: 327/362, 327/379, 327/382, 327/389, 327/427, 327/419, 327/432, 327/433, 327/493, 327/308, 327/374, 327/376, 327/377, 333/81.R, 330/284, 330/145
• US Class Current: 327/374
• CPC Class Codes: H03K 17/041 without feedback from the output circuit to the control circuit H03K17/0403, H03K17/0406 take precedence
• CPC Class Codes: H03K 17/74 by the use, as active elements, of diodes by the use of more than one type of semiconductor device H03K17/567; by the use of tunnel diodes H03K17/58; by the use of negative resistance diodes H03K17/70

Abstract

A high-frequency switch for blocking or transmitting a high frequency input signal. The switch includes a common-base transistor having an emitter, base, and collector, the emitter being connected to an input node and the base being connected to a power rail that is preferably ground. The input node is coupled to the input signal. The present invention utilizes a shunt having a switching element with closed and open states to route the input signal either to the collector of the common-base transistor or to the power rail. The switching element connects the input node to the power rail in the closed state and isolates the input node from the power rail when the switching element is in the open state. The open and closed states are selected by the application of a control signal to the switching element. A bias circuit sets the input node to be at a first bias potential when the switching element is in the open state and a second bias potential when the switching element is in the closed state. The first bias potential causes the common-base transistor to be in a conducting state, and the second bias potential causing the common-base transistor to be in a non-conducting state. The switching element may be constructed from a wide variety of circuit elements including a diode, transistor, or mechanical switch.

Claims

1. A high-frequency switch for blocking or transmitting an input signal, said switch comprising:

a common-base transistor having an emitter, base, and collector, said emitter being connected to an input node, said base being connected to a power rail, wherein said input node is coupled to said input signal;

a shunt comprising a switching element having closed and open states, said switching element connecting said input node to said power rail in said closed state and isolating said input node from said power rail when said switching element is in said open state, said open and closed states being selected by the application of a control signal to said switching element; and

a bias circuit for causing said input node to be at a first bias potential when said switching element is in said open state and a second bias potential when said switching element is in said closed state, said first bias potential causing said common-base transistor to be in a conducting state, and said second bias potential causing said common-base transistor to be in a non-conducting state.

2. The switch of claim 1, wherein said shunt further comprises a capacitor in series between said switching element and said power rail, said capacitor providing a conducting path for said input signal.

3. The switch of claim 1, wherein said switching element comprises a mechanical switch.

4. The switch of claim 1, wherein said switching element comprises a diode.

5. The switch of claim 4, wherein said diode is a P-N diode.

6. The switch of claim 4, wherein said diode is PIN diode.

7. The switch of claim 4, wherein said diode is a Schottky diode.

8. The switch of claim 1, wherein said switching element comprises a transistor.

9. The switch of claim 8, wherein said transistor is a field effect transistor.

10. The switch of claim 9, wherein said transistor is a NPN transistor.

11. The switch of claim 10, wherein said transistor is a PNP transistor.