Semiconductor device and a method of manufacturing the same

• US 6,313,481 B1
• Filed: 07/19/1999
• Issued: 11/06/2001
• Est. Priority Date: 08/06/1998
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohtani, Hisashi, Nakazawa, Misako
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US09/356,377
• Time in Patent Office: 841 Days
• Field of Search: 257/59, 257/72, 257/376
• US Class Current: 257/59
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer

Abstract

In a liquid crystal display device, an improved storage capacitance that uses a pair of transparent conductive films for electrodes is provided. On a flattening film made of a resin, a first transparent conductive film and an insulating film for capacitance are formed into a lamination to form in this laminated film an opening portion. An insulating film covering near the opening portion is formed. A transparent conductive film is formed and patterned to form a pixel electrode. Thus is formed a storage capacitance having the structure where the insulating film for capacitance is sandwiched between the first transparent conductive film and the pixel electrode.

Claims

1. A semiconductor device comprising:

a plurality of pixel TFTs being arranged in a matrix;

a storage capacitance being connected to each of the plurality of pixel TFTs;

a first transparent conductive film having a first opening portion;

a capacitance insulating film covering the first transparent conductive film and having a second opening portion which is formed at an inside deeper than the first opening portion;

an interlayer insulating film covering the second opening portion and being formed over the pixel TFTs; and

a second transparent conductive film being formed in contact with the interlayer insulating film and the capacitance insulating film,

wherein the storage capacitance comprises the first transparent conductive film, the capacitance insulating film and the second transparent conductive film.

3. A device according to claim 1, wherein the interlayer insulating film includes a resin material.

4. A device according to claim 1, wherein the interlayer insulating film comprises a resin material having a light shielding property or a lamination of a resin material having a light shielding property and a transparent resin material.

7. A device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL (electroluminescence) display device and an EC (elelctrochromic) display device.

8. A device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a rear type projector, a front type projector, a head mount display (a goggle type display), a vehicle navigation system, a personal computer and a portable information terminal such as a mobile computer, a cellular phone and an electronic book.

2. A semiconductor device comprising:

a plurality of pixel TFTs being arranged in a matrix; and

a storage capacitance being connected to each of the plurality of pixel TFTs;

a first transparent conductive film having a first opening portion;

a capacitance insulating film covering the first transparent conductive film and having a second opening portion which is formed at an inside deeper than the first opening portion;

an interlayer insulating film covering the second opening portion and being formed over the pixel TFTs;

a second transparent conductive film being formed in contact with the interlayer insulating film and the capacitance insulating film; and

a pad electrode including the second transparent conductive film,

wherein the storage capacitance comprising the first transparent conductive film, the capacitance insulating film and the second transparent conductive film,

wherein the first transparent conductive film is grounded through the pad electrode.

5. A device according to claim 2, wherein the interlayer insulating film includes a resin material.

6. A device according to claim 2, wherein the interlayer insulating film comprises a resin material having a light shielding property or a lamination of a resin material having a light shielding property and a transparent resin material.

9. A device according to claim 2, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL (electroluminescence) display device and an EC (electrochromic) display device.

10. A device according to claim 2, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a rear type projector, a front type projector, a head mount display (a goggle type display), a vehicle navigation system, a personal computer and a portable information terminal such as a mobile computer, a cellular phone and an electronic book.