×

Semiconductor device and a method of manufacturing the same

  • US 6,313,481 B1
  • Filed: 07/19/1999
  • Issued: 11/06/2001
  • Est. Priority Date: 08/06/1998
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device comprising:

  • a plurality of pixel TFTs being arranged in a matrix;

    a storage capacitance being connected to each of the plurality of pixel TFTs;

    a first transparent conductive film having a first opening portion;

    a capacitance insulating film covering the first transparent conductive film and having a second opening portion which is formed at an inside deeper than the first opening portion;

    an interlayer insulating film covering the second opening portion and being formed over the pixel TFTs; and

    a second transparent conductive film being formed in contact with the interlayer insulating film and the capacitance insulating film, wherein the storage capacitance comprises the first transparent conductive film, the capacitance insulating film and the second transparent conductive film.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×