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Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein

  • US 6,313,482 B1
  • Filed: 05/17/1999
  • Issued: 11/06/2001
  • Est. Priority Date: 05/17/1999
  • Status: Expired due to Term
First Claim
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1. A silicon carbide Schottky rectifier, comprising:

  • a silicon carbide substrate having a uniformly doped silicon carbide drift region of first conductivity type therein;

    first and second trenches having widths WT1, and WT2, respectively, in said uniformly doped silicon carbide drift region, said first and second trenches defining a silicon carbide drift region mesa therebetween having a width WM and a first conductivity type doping concentration NDM therein;

    first and second uniformly doped silicon carbide charge coupling regions of second conductivity type in said first and second trenches, respectively, said first uniformly doped silicon carbide charge coupling region forming a first P-N rectifying junction with said silicon carbide drift region mesa along a sidewall of said first trench and said second uniformly doped silicon carbide charge coupling region forming a second P-N rectifying function with said silicon carbide drift region mesa along a sidewall of said second trench; and

    a Schottky rectifying contact on said silicon carbide drift region mesa;

    wherein the second conductivity type doping concentrations in said first and second silicon carbide charge coupling regions equal NCC1 and NCC2, respectively;

    wherein 0.5×

    1013 cm

    2


    (NDM)(WM)≦

    5.0×

    1013 cm

    2
    ; and

    wherein (NDM)(WM)=½

    (NCC1)(WT1)+½

    (NCC2)(WT2).

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