Bump bonding and sealing a semiconductor device with solder

• US 6,313,529 B1
• Filed: 08/07/1998
• Issued: 11/06/2001
• Est. Priority Date: 08/08/1997
• Status: Expired due to Term

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Akita, Shigeyuki, Yoshihara, Shinji
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Doan, Theresa T.
• Application Number:
  US09/131,169
• Time in Patent Office: 1,187 Days
• Field of Search: 257/415, 257/419, 257/692, 257/698, 257/701, 257/724, 257/778, 257/787, 257/780, 257/416, 257/417, 438/50, 438/51, 438/52, 438/108, 438/127, 438/48
• US Class Current: 257/724
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/1147 using a lift-off mask
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 23/10 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance

Abstract

On a circuit chip on which a processing circuit for sensor outputs is formed, bump electrodes and a sealing bump, which has a shape of rectangular frame and is arranged to surround the bump electrodes, are formed by Sn—Pb solder. On a sensor chip provided with a sensing portion, electrode pads to be bonded to the bump electrode and a joining pad to be bonded to the sealing bump are formed. When the sensor chip is connected onto the circuit chip, an air-tight space containing the sensing portion is formed by the sealing bump and the joining pad.

Claims

1. A semiconductor device comprising:

a sensor chip including a semiconductor substrate having a main surface on which is formed a sensing portion that is movable in a direction approximately parallel to said main surface of said semiconductor substrate;

a circuit chip made of semiconductor material, in which a processing circuit for an output from said sensing portion is formed;

a first bump electrode electrically connected to said sensing portion and said processing circuit, wherein said sensor chip is connected onto said circuit chip with said first bump electrode being interposed therebetween;

a second bump electrode disposed on said circuit chip at an outside of said sensor chip, said second bump electrode being for wire-bonding; and

a sealing member interposed between said main surface of said semiconductor substrate and said circuit chip so that said sensing portion is contained in an air tight space formed by said sealing member,

wherein said first bump electrode and said second bump electrode are made of an identical material.

2. A semiconductor device according to claim 1, wherein said first bump electrode and said sealing member are formed on said circuit chip, and electrode pad and a joining pad to be bonded to said first bump electrode and said sealing member are respectively formed on said sensor chip.

3. A semiconductor device according to claim 2, wherein said electrode pad and said joining pad are formed by same material.

4. A semiconductor device according to claim 2, wherein:

each of said first bump electrode and said sealing member is composed of a bump part and a solder part made of a solder material; and

said electrode pad and said joining pad are made of a metallic material which forms a metallic compound with said solder material.

5. A semiconductor device according to claim 1, wherein said first bump electrode, said second bump electrode, and said sealing member are made of the identical material.

6. A semiconductor device according to claim 1, wherein said first bump electrode is composed of a bump part, and a solder part made of a solder material and interposed between said bump part and said sensor chip, said bump part being made of the identical material with said second bump electrode.

7. A semiconductor device according to claim 6, wherein said bump part of said first bump electrode has a height from said circuit chip equal to that of said second bump electrode.

8. A semiconductor device according to claim 6, wherein said sealing member is composed of a bump part, and a solder part made of the solder material, said bump part being made of the identical material with said bump part of said first bump electrode and said second bump electrode.

9. A semiconductor device according to claim 8, wherein said bump part of said first bump electrode, said bump part of said sealing member and said second bump electrode are formed simultaneously on the circuit chip.

10. A semiconductor device according to claim 6, wherein said bump electrode, said sealing member, and said wire-bonding electrode are formed simultaneously on said circuit board.

11. A semiconductor device comprising:

a sensor chip comprising;

a substrate;

an insulating film disposed on said substrate;

a sensing portion disposed on said insulating film, said sensing portion comprising a first semiconductor region, said first semiconductor region comprising a moveable structure and a fixed structure wherein a force applied to said moveable structure results in displacement of said moveable structure relative to said fixed structure;

a sealing portion disposed on said insulating film, said sealing portion comprising a second semiconductor region surrounding and separated from said sensing portion;

a groove separating said sensing portion and said sealing portion, said groove providing electrical isolation between said sensing portion and said sealing portion;

a circuit chip comprising a processing circuit, said circuit chip being constructed and arranged to face said sensor chip;

a bump electrode interposed between said fixed structure of said sensing portion and said circuit chip, said bump electrode forming an electrical connection between said sensing portion and said processing circuit; and

a sealing member positioned between said sealing portion and said circuit chip to form a seal between said sensor chip and said circuit chip and thereby define an enclosed space containing said sensing portion.

12. A semiconductor device according to claim 11, wherein:

said bump electrode and said sealing member are formed on a circuit chip side; and

an electrode pad and a joining pad to be bonded to said bump electrode and said sealing member are respectively formed on a sensor chip side.

13. A semiconductor device according to claim 12, wherein said electrode pad and said joining pad are made of same material.

14. A semiconductor device according to claim 12, wherein:

said bump electrode and said sealing member are made of solder material; and

said electrode pad and said joining pad are made of metallic material which forms a metallic compound with said solder material.

15. A semiconductor device according to claim 11, wherein:

said bump electrode and said sealing member are made of same material.

16. A semiconductor device according to claim 11, further comprising a wire-bonding electrode provided on said circuit chip at an outside region other than a region facing the sensor chip, for being wire-bonded to a wire, wherein:

said wire-bonding electrode and said bump electrode are made of an identical material with each other.

17. A semiconductor device according to claim 16, wherein said bump electrode is composed of a bump part, and a solder part made of a solder material and interposed between said bump part and said sensor chip, said bump part being made of the identical material with said wire-bonding electrode.

18. A semiconductor device according to claim 17, wherein said bump part of said first bump electrode has a height from said circuit chip equal to that of said wire-bonding electrode.

19. A semiconductor device according to claim 17, wherein said sealing member is composed of a bump part, and a solder part made of said solder material and interposed between said bump part and said sensor chip, said bump part being made of the identical material with said bump part of said bump electrode and said wire-bonding electrode.

20. A semiconductor device according to claim 19, wherein said bump part of said bump electrode, said bump part of said sealing member, and said wire-bonding electrode are formed simultaneously on said circuit chip.