Please download the dossier by clicking on the dossier button x
×

Bias network for high efficiency RF linear power amplifier

  • US 6,313,705 B1
  • Filed: 12/20/1999
  • Issued: 11/06/2001
  • Est. Priority Date: 12/20/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A linear amplifier bias network comprising:

  • a radio frequency bipolar junction transistor having a base, collector and emitter;

    a capacitor having one end coupled to the base of the radio frequency bipolar junction transistor and having an opposite end configured to receive a radio frequency input signal;

    a buffered passive bias network having a first bipolar junction transistor and further having an emitter resistor associated with the first bipolar junction transistor; and

    a current mirror bias network coupled to the buffered passive bias network, the current mirror bias network having a second bipolar junction transistor and further having a collector resistor and a base resistor associated with the second bipolar junction transistor;

    wherein a combination of resistance values for the emitter, base and collector resistors are capable of adjusting a bias impedance associated with the bias network such that the bias network can achieve a desired temperature compensation characteristic and further such that the bias network can achieve a desired level of quiescent current and minimize gain expansion associated with the radio frequency bipolar junction transistor.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×