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Method for obtaining a thin film in particular semiconductor, comprising a protected ion zone and involving an ion implantation

  • US 6,316,333 B1
  • Filed: 07/14/1999
  • Issued: 11/13/2001
  • Est. Priority Date: 01/27/1997
  • Status: Expired due to Term
First Claim
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1. Process for obtaining a thin film starting from a semiconducting substrate, this thin film being composed of a region of the substrate adjacent to one of its faces and separated from the rest of the substrate, at least one transistor being created from the said region, the process comprising the following steps:

  • generation of the said transistor until at least two superposed areas making up the transistor are obtained, the upper area including the transistor gate acting as a means of masking the lower area by defining a width of the masked area in the substrate not exceeding a determined limiting dimension for the material of the said substrate, ionic implantation of the substrate through the said surface of the substrate, capable of creating a layer of micro-cavities within the thickness of the substrate and at a depth close to the average ion penetration depth, delimiting the said region from the rest of the substrate except for an area corresponding to the masked area, heat treatment at a sufficiently high temperature to make a fracture line along this layer of micro-cavities, this fracture line being either continuous if the width of the masked area is sufficiently small compared with the said limiting dimension, or discontinuous if the width of the masked area is not sufficiently small with respect to the said delimiting dimension, cleavage of the thin film from the rest of the substrate, either by simple separation if the fracture line is continuous, or by the application of mechanical forces between the said region and the rest of the substrate if the fracture line is discontinuous.

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