Semiconductor integrated circuit and fabrication method thereof
First Claim
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1. A semiconductor device having a driving circuit and an active matrix circuit, said driving circuit comprising:
- a logic circuit having at least a first thin film transistor formed over a substrate, said first thin film transistor having a first gate insulating film and a first gate electrode;
a buffer circuit having at least a second thin film transistor formed over said substrate, said second thin film transistor having a second gate insulating film and a second gate electrode; and
a high withstand voltage switching circuit having at least a third thin film transistor formed over said substrate, said third thin film transistor having a third gate insulating film and a third gate electrode, wherein each width of said second and third gate electrodes is larger than the width of said first gate electrode, wherein a thickness of said first gate insulating film is 80% or less of each thickness of said second and third gate insulating films.
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Abstract
A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals).
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Citations
94 Claims
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1. A semiconductor device having a driving circuit and an active matrix circuit, said driving circuit comprising:
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a logic circuit having at least a first thin film transistor formed over a substrate, said first thin film transistor having a first gate insulating film and a first gate electrode;
a buffer circuit having at least a second thin film transistor formed over said substrate, said second thin film transistor having a second gate insulating film and a second gate electrode; and
a high withstand voltage switching circuit having at least a third thin film transistor formed over said substrate, said third thin film transistor having a third gate insulating film and a third gate electrode, wherein each width of said second and third gate electrodes is larger than the width of said first gate electrode, wherein a thickness of said first gate insulating film is 80% or less of each thickness of said second and third gate insulating films. - View Dependent Claims (9, 12, 29, 33, 41, 48, 56, 63, 71, 79, 87)
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2. A semiconductor device having a driving circuit and an active matrix circuit, said driving circuit comprising:
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a logic circuit having at least a first thin film transistor over a substrate;
a buffer circuit having at least a second thin film transistor over said substrate;
a high withstand voltage switching circuit having at least a third thin film transistor formed over said substrate;
said first thin film transistor having a first gate insulating film, a first gate electrode and a first channel region;
said second thin film transistor having a second gate insulating film, a second gate electrode and a second channel region; and
said third thin film transistor having a third gate insulating film, a third gate electrode and a third channel region, wherein each width of said second and third gate electrodes is larger than the width of said first gate electrode, wherein a thickness of said first gate insulating film is 80% or less of each thickness of said second and third gate insulating films, and wherein a length of said first channel region is 80% or less of each length of said second and third channel regions. - View Dependent Claims (10, 13, 30, 34, 42, 49, 57, 64, 72, 80, 88)
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3. A semiconductor device, having a driving circuit and an active matrix circuit, said driving circuit compromising:
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a logic circuit having a least a first thin film transistor formed over a substrate, said first thin film transistor having a first gate insulating film and a first gate electrode; and
a high withstand voltage switching circuit having at least a second thin film transistor formed over said substrate, said second thin film transistor having a second gate insulating film and a second gate electrode, wherein a thickness of said first gate insulating film is 80% or less of a thickness or said second gate insulating film. - View Dependent Claims (31, 35, 50, 58, 65, 73, 81, 89)
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4. A semiconductor device, said semiconductor device having a driving circuit and an active matrix circuit, said driving circuit comprising:
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a logic circuit having at least a first thin film transistor formed over a substrate, said first thin film transistor having a first gate insulating film and a first channel region; and
a high withstand voltage switching circuit having at least a second thin film transistor formed over said substrate, said second thin film transistor having a second gate insulating film and a second channel region, wherein a first thickness of said first gate insulating film is 80% or less of a second thickness of said second gate insulating film, and wherein a first length of said first channel region is 80% or less of a second length of said second channel region. - View Dependent Claims (11, 14, 32, 36, 43, 51, 59, 66, 74, 82, 90)
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5. A semiconductor device having a driving circuit and an active matrix circuit, said driving circuit comprising:
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a logic circuit having at least a first thin film transistor formed over a substrate, said first thin film transistor having a first gate insulating film and a first gate electrode; and
a high withstand voltage switching circuit having at least a second thin film transistor formed over said substrate, said second thin film transistor having a second gate insulating film and a second gate electrode, wherein a thickness of said first gate insulating film is 80% or less of a thickness of said second gate insulating film, wherein a width of said second gate electrode is larger than the width of said first gate electrode. - View Dependent Claims (16, 17, 18, 37, 44, 52, 60, 67, 75, 83, 91)
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6. A semiconductor device having a driving circuit and an active matrix circuit, said driving circuit comprising:
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a logic circuit having at least a first thin film transistor formed over a substrate, said first thin film transistor having a first gate insulating film, a first gate electrode and a first channel region; and
a high withstand voltage circuit having at least a second thin film transistor formed over said substrate, said second thin film transistor having a second gate insulating film, a second gate electrode, and a second channel region, wherein a first thickness of said first gate insulating film is 80% or less of a second thickness of said second gate insulating film, wherein a first length of said first channel region is 80% or less of a second length of said second channel region, wherein a width of said second gate electrode is larger than the width of said first gate electrode. - View Dependent Claims (19, 20, 21, 38, 45, 53, 61, 68, 76, 84, 92)
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7. A semiconductor device having a driving circuit and an active matrix circuit, said driving circuit comprising:
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a logic circuit having at least a first thin film transistor formed over a substrate, said first thin film transistor having a first gate insulating film and a first gate electrode;
a buffer circuit having at least a second thin film transistor formed over said substrate, said second thin film transistor having a second gate insulating film and a second gate electrode; and
a high withstand voltage switching circuit having at least a third thin film transistor formed over said substrate, said third thin film transistor having a third gate insulating film and a third gate electrode, wherein a thickness of said first gate insulating film is 80% or less of each thickness of said second and third gate insulating films. - View Dependent Claims (15, 22, 23, 24, 39, 46, 54, 69, 77, 85, 93)
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8. A semiconductor device having a driving circuit and an active matrix circuit, said driving circuit comprising:
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a logic circuit having at least a first thin film transistor formed over a substrate, said first thin film transistor having a first gate insulating film, a first gate electrode and a first channel region;
a buffer circuit having at least a second thin film transistor formed over said substrate, said second thin film transistor having a second gate insulating film, a second gate electrode and a second channel region; and
a high withstand voltage switching circuit having at least a third thin film transistor formed over said substrate, said third thin film transistor having a third gate insulating film and a third channel region, wherein a thickness of said first gate insulating film is 80% or less of each thickness of said second and third gate insulating films, wherein a length of said first channel region is 80% or less of each length of said second and third channel regions. - View Dependent Claims (25, 26, 27, 28, 40, 47, 55, 62, 70, 78, 86, 94)
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Specification