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Semiconductor integrated circuit and fabrication method thereof

  • US 6,316,787 B1
  • Filed: 05/23/1997
  • Issued: 11/13/2001
  • Est. Priority Date: 06/04/1996
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device having a driving circuit and an active matrix circuit, said driving circuit comprising:

  • a logic circuit having at least a first thin film transistor formed over a substrate, said first thin film transistor having a first gate insulating film and a first gate electrode;

    a buffer circuit having at least a second thin film transistor formed over said substrate, said second thin film transistor having a second gate insulating film and a second gate electrode; and

    a high withstand voltage switching circuit having at least a third thin film transistor formed over said substrate, said third thin film transistor having a third gate insulating film and a third gate electrode, wherein each width of said second and third gate electrodes is larger than the width of said first gate electrode, wherein a thickness of said first gate insulating film is 80% or less of each thickness of said second and third gate insulating films.

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