Trench transistor with a self-aligned source

• US 6,316,806 B1
• Filed: 03/31/1999
• Issued: 11/13/2001
• Est. Priority Date: 03/31/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairfield Semiconductor Corporation
• Inventors: Mo, Brian Sze-Ki
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Hu, Shouxiang
• Application Number:
  US09/282,274
• Time in Patent Office: 958 Days
• Field of Search: 257/330, 257/329, 257/331, 257/341, 257/332, 257/328, 438/270, 438/271, 438/272, 438/273, 438/274, 438/277, 438/212, 438/268, 438/259
• US Class Current: 257/330
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/0856 Source regions
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trench field-effect transistor with a self-aligned source. At least a portion of the source implantation dose (604) is implanted underneath the gate (610) of a trench transistor by implanting an a non-orthogonal angle to the sidewall (608) of the trench. In one embodiment, a slow diffuser, such as arsenic, is implanted to minimize the post-implant diffusion. The resulting structure ensures gate-source overlap, and a consistent, small, gate-source capacitance with a lower thermal budget for the resultant device. The narrow depth of the source, in conjunction with its unique L-shape, improves device ruggedness because the source doping does not compensate the heavy body doping as much as with conventional devices. In one embodiment, the substrate is rotated 180 degrees within the implanter to implant both sidewalls of a trench.

Claims

1. A trench transistor comprising:

a substrate having a surface;

a trench extending a selected depth into the substrate from the surface, the trench having a sidewall;

a gate structure at least partially within the trench;

a source contact region extending a selected distance into the substrate from the surface; and

a source region self-aligned to the gate,

wherein the source region forms a p-n junction in the substrate, a distance of the source p-n junction from the sidewall being approximately equal to the distance of the extension of the source contact region from the surface.

2. The trench transistor of claim 1 wherein the source region overlaps a portion of the gate structure.

3. The trench transistor of claim 2 wherein the degree of overlap is controlled during the manufacture of the transistor so as to provide a predetermined gate-to-source capacitance.

4. The trench transistor of claim 1 wherein both the distance of the source p-n junction from the sidewall and the distance of the extension of the source contact region from the surface is less than or equal to about 0.15 microns.

5. The trench transistor of claim 1 wherein the gate structure is recessed from the surface.

6. The trench transistor of claim 1 further comprising a heavy body, the heavy body extending into the inner corner formed by the source region and the source contact region.

7. A trench transistor comprising:

a substrate having a surface;

a trench extending a selected distance into the substrate from the surface, the trench having a sidewall;

a gate structure at least partially within the trench, the gate structure being recessed from the surface;

a source region self-aligned to the gate structure, the source region overlapping a portion of the gate structure and forming a p-n junction at a selected distance of less than or equal to about 0.15 microns from the sidewall, at least a portion of the p-n junction being parallel to the sidewall;

a source contact region extending less than or equal to about 0.15 microns from the surface, the source contact region forming an inner corner with the source region; and

a heavy body extending into the inner corner.