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Trench transistor with a self-aligned source

  • US 6,316,806 B1
  • Filed: 03/31/1999
  • Issued: 11/13/2001
  • Est. Priority Date: 03/31/1999
  • Status: Expired due to Term
First Claim
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1. A trench transistor comprising:

  • a substrate having a surface;

    a trench extending a selected depth into the substrate from the surface, the trench having a sidewall;

    a gate structure at least partially within the trench;

    a source contact region extending a selected distance into the substrate from the surface; and

    a source region self-aligned to the gate, wherein the source region forms a p-n junction in the substrate, a distance of the source p-n junction from the sidewall being approximately equal to the distance of the extension of the source contact region from the surface.

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