Semiconductor device

• US 6,316,838 B1
• Filed: 03/20/2000
• Issued: 11/13/2001
• Est. Priority Date: 10/29/1999
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Harayama, Masahiko, Hiraoka, Tetsuya, Okada, Akira, Sato, Mitsutaka, Ozawa, Kaname, Okuda, Hayato, Akashi, Yuji
• Primary Examiner(s): Clark, Sheila V.
• Application Number:
  US09/531,231
• Time in Patent Office: 603 Days
• Field of Search: 257/686, 257/777, 257/782, 257/783, 257/666, 257/723, 257/724
• US Class Current: 257/778
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/4554 Coating
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48471 the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
• CPC Class Codes: H01L 2224/48479 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/48599 : Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/48699 : Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
• CPC Class Codes: H01L 2224/4903 : Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/4911 : the connectors being bonded to at least one common bonding area, e.g. daisy chain
• CPC Class Codes: H01L 2224/49175 : Parallel arrangements
• CPC Class Codes: H01L 2224/49429 : Wedge and ball bonds
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/78301 : Capillary
• CPC Class Codes: H01L 2224/85051 : Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
• CPC Class Codes: H01L 2224/85181 : connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/85951 : Forming additional members, e.g. for reinforcing
• CPC Class Codes: H01L 2225/06506 : Wire or wire-like electrical connections between devices
• CPC Class Codes: H01L 2225/0651 : Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06517 : Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06527 : Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 2225/06582 : Housing for the assembly, e.g. chip scale package [CSP]
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/78 : Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/10161 : with a rectangular active surface
• CPC Class Codes: H01L 2924/15183 : in a single layer of the multilayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/2075 : larger or equal to 1 micron less than 10 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/20754 : larger or equal to 40 microns less than 50 microns
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/20756 : larger or equal to 60 microns less than 70 microns
• CPC Class Codes: H01L 2924/20757 : larger or equal to 70 microns less than 80 microns
• CPC Class Codes: H01L 2924/20758 : larger or equal to 80 microns less than 90 microns
• CPC Class Codes: H01L 2924/20759 : larger or equal to 90 microns less than 100 microns
• CPC Class Codes: H01L 2924/2076 : equal to or larger than 100 microns
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

A semiconductor device includes a substrate provided with a plurality of leads, a face-down semiconductor element provided on one surface of the substrate, a first stacked semiconductor element and a second stacked semiconductor element provided on another surface of the substrate and connected to the substrate by wires, and an extended wiring mechanism for connecting electrodes of the face-down semiconductor element and electrodes of the first and second semiconductor elements. The connected electrodes are equi-electrodes whose electrical characteristics are equal.

Claims

1. A semiconductor device comprising:

a substrate having a plurality of flip-chip pads formed on a first surface thereof and a plurality of wire bonding pads formed on a second surface thereof;

a first semiconductor element provided on said first surface of said substrate via the flip-chip pads in a face-down state;

a second semiconductor element provided on said second surface, opposite to said first surface, of said substrate in a face-up state and electrically connected to said wire bonding pads by wires; and

an extended wiring mechanism formed on said substrate for connecting the flip-chip pads and the respective wire bonding pads to each other, the connected flip-chip pads and the wire bonding pads corresponding to equi-electrodes whose electrical characteristics are equal.

2. The semiconductor device as claimed in claim 1, further comprising a plurality of connecting terminals provided on said substrate, wherein said extended wiring mechanism includes:

a plurality of connecting terminals provided on said substrate;

a plurality of vias formed penetrating said substrate;

first extended wires laid on said first surface of said substrate and serving to electrically connect said first semiconductor element and said vias; and

second extended wires laid on said second surface of said substrate and serving to electrically connecting said semiconductor element, said connecting terminals and said vias.

3. The semiconductor device as claimed in claim 1, wherein said substrate is a flexible wiring substrate made of polyimide as a basic material.

4. The semiconductor device as claimed in claim 1, wherein said substrate is a printed wiring substrate made of glass epoxy as a basic material.

6. The semiconductor device as claimed in claim 2, wherein said connecting terminals are solder balls, said solder balls being formed to be in electrical connection with said extended wiring mechanism.

7. The semiconductor device as claimed in claim 1, further comprising a semiconductor element or a plurality of semiconductor elements stacked on and electrically connected to said second semiconductor element.

8. The semiconductor device as claimed in claim 2, wherein said first and second extended wires are formed by print-wiring metal leaf into a predetermined pattern.

5. The semiconductor device as claimed in 2, wherein said connecting terminals are solder balls, said solder balls being formed to be in electrical connection with said extended wiring mechanism.