Semiconductor device

• US 6,316,840 B1
• Filed: 07/25/2000
• Issued: 11/13/2001
• Est. Priority Date: 02/16/2000
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Otani, Hiroshi
• Primary Examiner(s): Clark, Sheila V.
• Application Number:
  US09/625,541
• Time in Patent Office: 476 Days
• Field of Search: 257/787, 257/790, 257/777, 257/414, 257/723, 257/724, 257/778
• US Class Current: 257/787
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01021 Scandium [Sc]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Abstract

A sensor substrate (2) is mounted on a signal processing substrate (1), and a sealing resin (3) is so provided as to extend from an edge portion of the sensor substrate (2) onto a main surface of the signal processing substrate (1). The sealing resin (3) is provided over the whole outer peripheral region of the sensor substrate (2), and the sealing resin (3), the sensor substrate (2) and the signal processing substrate (1) define the sealed space (SP). The sensor substrate (2) has a plurality of bumps (21) on its main surface and makes an electrical connection with the signal processing substrate (1) by bonding the bumps (21) to an electrode provided on the main surface of the signal processing substrate (1). With this structure, a semiconductor device which allows reduction in manufacturing cost by omitting a cap which protects moving part of the sensor substrate can be achieved.

Claims

1. A semiconductor device comprising:

a sensor substrate comprising a moving part on a first main surface thereof, for converting the displacement of said moving part into an electrical signal and outputting said electrical signal;

an opposed substrate opposed to said first main surface of said sensor substrate, for transmitting said electrical signal with said sensor substrate through a bump provided around said moving part; and

a sealing member provided at least in an edge portion of a gap defined by said sensor substrate and said opposed substrate,

wherein a sealed space is defined by said sensor substrate, said opposed substrate and said sealing member.

2. The semiconductor device according to claim 1, wherein

said opposed substrate is a signal processing substrate for performing a predetermined processing on said electrical signal from said sensor substrate, and

said sensor substrate is provided on said signal processing substrate.

3. The semiconductor device according to claim 2, wherein

said sealing member is made of resin and so provided as to cover only said edge portion of said gap defined by said sensor substrate and said opposed substrate.

4. The semiconductor device according to claim 2, wherein

said sealing member is made of resin and so provided as to entirely cover said sensor substrate.

5. The semiconductor device according to claim 4, wherein

said resin is silicone gel.

6. The semiconductor device according to claim 4, further comprising:

a barrier provided so as to surround at least said sensor substrate, having such a height as to reach a second main surface opposite to said first main surface of said sensor substrate,

wherein said resin is so provided as to fill the inside of said barrier.

7. The semiconductor device according to claim 2, wherein

said sealing member is made of glass and provided between an edge portion of said first main surface of said sensor substrate and a main surface of said opposed substrate.

8. The semiconductor device according to claim 7, wherein

said glass includes at least PbO.

9. The semiconductor device according to claim 2, wherein

said sealing member is made of eutectic alloy including at least silicon and provided between an edge portion of said first main surface of said sensor substrate and a main surface of said opposed substrate.

10. The semiconductor device according to claim 9, wherein

said opposed substrate comprises a concave portion provided in said main surface of said opposed substrate correspondingly to a region in which said moving part and said bump of said sensor substrate are provided, and

said moving part and said bump are partially contained in said concave portion.

11. The semiconductor device according to claim 1, further comprising

a signal processing substrate for performing a predetermined processing on said electrical signal from said sensor substrate,

wherein said opposed substrate is a wiring board having a wiring pattern to transmit said electrical signal from said sensor substrate to said signal processing substrate, and

said sensor substrate is provided on said wiring board.

12. The semiconductor device according to claim 11, wherein

said sealing member is made of resin and so provided as to cover only said edge portion of said gap defined by said sensor substrate and said opposed substrate.

13. The semiconductor device according to claim 11, wherein

said sealing member is made of resin and so provided as to entirely cover said sensor substrate.

14. The semiconductor device according to claim 13, wherein

said resin is silicone gel.

15. The semiconductor device according to claim 13, further comprising:

a barrier provided so as to surround at least said sensor substrate, having such a height as to reach a second main surface opposite to said first main surface of said sensor substrate,

wherein said resin is so provided as to fill the inside of said barrier.

16. The semiconductor device according to claim 11, wherein

said sealing member is made of glass and provided between an edge portion of said first main surface of said sensor substrate and a main surface of said opposed substrate.

17. The semiconductor device according to claim 16, wherein

said glass includes at least PbO.

18. The semiconductor device according to claim 11, wherein

said sealing member is made of eutectic alloy including at least silicon and provided between an edge portion of said first main surface of said sensor substrate and a main surface of said opposed substrate.

19. The semiconductor device according to claim 18, wherein

said opposed substrate comprises a concave portion provided in said main surface of said opposed substrate correspondingly to a region in which said moving part and said bump of said sensor substrate are provided, and

said moving part and said bump are partially contained in said concave portion.

20. A semiconductor device comprising:

a sensor substrate comprising a moving part on a first main surface thereof, for converting the displacement of said moving part into an electrical signal and outputting said electrical signal; and

an opposed substrate opposed to said first main surface of said sensor substrate, for transmitting said electrical signal with said sensor substrate through a bump provided around said moving part,

wherein a gap defined by said sensor substrate and said opposed substrate has a size not smaller than 2 μ

m and not larger than 10 μ

m.