Optical device including carbon-doped contact layers
First Claim
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1. An optical device comprising:
- a semiconductor waveguide region including an active region a cladding region including a dopant comprising Zn formed adjacent to the waveguide region; and
adapted to provide waveguiding of light in the active region; and
a semiconductor contact region selected from InGaAs and InGaAsP formed over the waveguide region, the contact region including a p-type dopant comprising carbon to provide sufficient conductivity to make low resistance contact with the waveguide region.
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Abstract
The invention is an optical device and method of fabrication which mitigates the problem of Zn migration in the cladding and waveguide regions. The contact region includes carbon, which acts as a p-type dopant in ternary semiconductor material. The contact layer is made of InGaAs or InGaAsP, and the invention is most advantageously used in an electroabsorption modulated laser or capped mesa buried heterostructure laser.
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Citations
8 Claims
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1. An optical device comprising:
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a semiconductor waveguide region including an active region a cladding region including a dopant comprising Zn formed adjacent to the waveguide region; and
adapted to provide waveguiding of light in the active region; and
a semiconductor contact region selected from InGaAs and InGaAsP formed over the waveguide region, the contact region including a p-type dopant comprising carbon to provide sufficient conductivity to make low resistance contact with the waveguide region. - View Dependent Claims (2, 3, 4, 5)
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6. A method for fabricating an optical device comprising the steps of:
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epitaxially forming a semiconductor waveguide region over a substrate;
forming a cladding region adjacent to said waveguide region, the cladding region including a dopant comprising Zn; and
epitaxially forming a contact region selected from InGaAs and InGaAsP over the waveguide region, the contact region including a p-type dopant comprising carbon to provide a sufficient conductivity to make low resistance contact to the waveguide region. - View Dependent Claims (7, 8)
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Specification
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Current AssigneeAvago Technologies International Sales Pte Limited (Broadcom, Inc.)
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Original AssigneeAgere Systems Incorporated (Broadcom, Inc.)
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InventorsSeiler, Joseph Brian, Hamm, Robert Alan, Chakrabarti, Utpal Kumar, Shtengel, Gleb E., Smith, Lawrence Edwin
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Primary Examiner(s)LEUNG, QUYEN PHAN
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Application NumberUS09/097,205Publication NumberTime in Patent Office1,250 DaysField of Search385/131, 385/132, 385/142, 385/144, 372/45, 372/46, 372/50, 257/101-102US Class Current372/45.01CPC Class CodesH01L 33/343 characterised by the doping...H01S 5/0265 Intensity modulators intra-...H01S 5/0421 characterised by the semico...H01S 5/227 Buried mesa structure ; Str...H01S 5/3054 p-dopingH01S 5/32391 based on In(Ga)(As)P
