Integrated circuit configuration and ignition unit

• US 6,318,267 B1
• Filed: 06/19/2000
• Issued: 11/20/2001
• Est. Priority Date: 12/18/1997
• Status: Expired due to Fees

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Rothleitner, Hubert, Swart, Marten
• Primary Examiner(s): Jordan, Charles T.
• Assistant Examiner(s): Semunegus, Lulit
• Application Number:
  US09/596,424
• Time in Patent Office: 519 Days
• Field of Search: 102/202.5, 102/202.6, 102/202.7, 102/202.4, 102/202.8, 361/502, 361/433
• US Class Current: 102/202.5
• CPC Class Codes: B60R 2021/01006 Mounting of electrical components in vehicles
• CPC Class Codes: B60R 2021/26029 Ignitors
• CPC Class Codes: B60R 21/017 including arrangements for providing electric power to safety arrangements or their actuating means, e.g. to pyrotechnic fuses or electro-mechanic valves
• CPC Class Codes: F42B 3/13 with semiconductive bridge
• CPC Class Codes: H01L 27/0682 comprising combinations of capacitors and resistors

Abstract

An integrated circuit configuration, in particular for igniting a restraint device of a motor vehicle, has a capacitor and an ignition element. In this case, a porous region of a semiconductor layer forms a capacitor electrode, which is isolated from a further semiconductor layer by a dielectric layer. The further semiconductor layer being configured as a further capacitor electrode. The further semiconductor layer has a region that is tapered in its cross-section and serves as an ignition element electrically connected to the capacitor.

Claims

1. An integrated circuit configuration, comprising:

a semiconductor layer functioning as a first capacitor electrode, said semiconductor layer having a porous region formed therein;

a dielectric layer disposed on said semiconductor layer; and

a further semiconductor layer functioning as a second capacitor electrode disposed on said dielectric layer, said first capacitor electrode, said dielectric layer and said second capacitor electrode forming a capacitor in said porous region of said semiconductor layer, said further semiconductor layer having a region tapered in its cross-section serving as an ignition element connected to said capacitor.

2. The integrated circuit configuration according to claim 1, wherein said further semiconductor layer is a polysilicon layer.

3. The integrated circuit configuration according to claim 1, wherein said semiconductor layer has a nonporous region, and said region of said further semiconductor layer being a tapered region extending over said nonporous region of said semiconductor layer.

4. The integrated circuit configuration according to claim 1, including a contact area disposed on an area of said semiconductor layer that is free of said dielectric layer and said further semiconductor layer.

5. The integrated circuit configuration according to claim 4, wherein said semiconductor layer has a nonporous region, and including a further contact area disposed on said further semiconductor layer above said nonporous region of said semiconductor layer.

6. The integrated circuit configuration according to claim 1, wherein said ignition element has a resistance in a range of from 0.5 to 20 ohms.

7. The integrated circuit configuration according to claim 1, wherein said capacitor has a capacitance greater than 0.8 μ

F.

8. The integrated circuit configuration according to claim 1, wherein said capacitor has a capacitance of less than 0.8 μ

F.

9. The integrated circuit configuration according to claim 1, wherein said semiconductor layer has a nonporous region, and including a insulating layer disposed between and isolating said semiconductor layer from said further semiconductor layer, and said insulating layer is a partial layer of said dielectric layer.

10. In an occupant protection device of a motor vehicle, an ignition unit for igniting the occupant protection device, the ignition unit comprising:

a semiconductor layer functioning as a first capacitor electrode, said semiconductor layer having a porous region formed therein;

a dielectric layer disposed on said semiconductor layer;

a further semiconductor layer functioning as a second capacitor electrode disposed on said dielectric layer, said first capacitor electrode, said dielectric layer and said second capacitor electrode forming a capacitor in said porous region of said semiconductor layer;

an ignition material; and

said further semiconductor layer having a region tapered in its cross-section and serves as an ignition element connected to said capacitor, said capacitor storing electrical energy for heating said ignition element, said ignition element, in an event of current throughflow, igniting said ignition material thermally coupled to said ignition element.

11. The ignition unit according to claim 10, wherein said capacitor has a capacitance dimensioned such that energy stored in said capacitor is less than a quantity of energy which is required for igniting said ignition material.

12. The ignition unit according to claim 10, wherein said capacitor has a capacitance dimensioned such that energy stored in said capacitor suffices for igniting said ignition material.