Modification of 193 nm sensitive photoresist materials by electron beam exposure
First Claim
Patent Images
1. A process for producing an etch resistant image which comprises:
- (a) coating and drying a photosensitive composition onto a substrate, which photosensitive composition comprises (i) at least one water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet radiation at a wavelength of about 193 nm, wherein said polymer is present in the photosensitive composition in an amount sufficient to form a uniform film of the composition components when it is coated on a substrate and dried;
(ii) at least one photosensitive compound capable of generating an acid upon exposure to sufficient activating energy at a wavelength of about 193 nm, said photosensitive compound being present in an amount sufficient to substantially uniformly photosensitize the photosensitive composition;
(b) imagewise exposing the photosensitive composition to sufficient activating energy at a wavelength of 193 nm to cause the photosensitive compound to generate sufficient acid to decompose the polymer in the imagewise exposed areas of the photosensitive composition;
(c) developing the photosensitive composition to thereby remove the exposed nonimage areas and leaving the unexposed image areas of the photosensitive composition;
(d) irradiating the image areas of the photosensitive composition to sufficient electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant.
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Abstract
A process for increasing the etch resistance of photoresists, especially positive working 193 nm sensitive photoresists which are suitable for use in the production of microelectronic devices such as integrated circuits. A 193 nm photosensitive composition is coated onto a substrate, exposed to activating energy at a wavelength of 193 nm to decompose the polymer in the imagewise exposed areas; and developed to remove the exposed nonimage areas. Then the image areas are exposed to sufficient electron beam radiation to increase the resistance of the image areas to an etchant.
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Citations
28 Claims
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1. A process for producing an etch resistant image which comprises:
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(a) coating and drying a photosensitive composition onto a substrate, which photosensitive composition comprises (i) at least one water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet radiation at a wavelength of about 193 nm, wherein said polymer is present in the photosensitive composition in an amount sufficient to form a uniform film of the composition components when it is coated on a substrate and dried;
(ii) at least one photosensitive compound capable of generating an acid upon exposure to sufficient activating energy at a wavelength of about 193 nm, said photosensitive compound being present in an amount sufficient to substantially uniformly photosensitize the photosensitive composition;
(b) imagewise exposing the photosensitive composition to sufficient activating energy at a wavelength of 193 nm to cause the photosensitive compound to generate sufficient acid to decompose the polymer in the imagewise exposed areas of the photosensitive composition;
(c) developing the photosensitive composition to thereby remove the exposed nonimage areas and leaving the unexposed image areas of the photosensitive composition;
(d) irradiating the image areas of the photosensitive composition to sufficient electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A process for producing a microelectronic device image which comprises:
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(a) coating and drying a photosensitive composition onto a semiconductor substrate, which photosensitive composition comprises (i) at least one water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet radiation at a wavelength of about 193 nm, wherein said polymer is present in the photosensitive composition in an amount sufficient to form a uniform film of the composition components when it is coated on a substrate and dried;
(ii) at least one photosensitive compound capable of generating an acid upon exposure to sufficient activating energy at a wavelength of about 193 nm, said photosensitive compound being present in an amount sufficient to substantially uniformly photosensitize the photosensitive composition;
(b) imagewise exposing the photosensitive composition to sufficient activating energy at a wavelength of 193 nm to cause the photosensitive compound to generate sufficient acid to decompose the polymer in the imagewise exposed areas of the photosensitive composition;
(c) developing the photosensitive composition to thereby remove the exposed nonimage areas and leaving the unexposed image areas of the photosensitive composition;
(d) irradiating the image areas of the photosensitive composition to sufficient electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant. - View Dependent Claims (26)
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27. A microelectronic device image produced by a process which comprises:
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(a) coating and drying a photosensitive composition onto a semiconductor substrate, which photosensitive composition comprises (i) at least one water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet radiation at a wavelength of about 193 nm, wherein said polymer is present in the photosensitive composition in an amount sufficient to form a uniform film of the composition components when it is coated on a substrate and dried;
(ii) at least one photosensitive compound capable of generating an acid upon exposure to sufficient activating energy at a wavelength of about 193 nm, said photosensitive compound being present in an amount sufficient to substantially uniformly photosensitive the photosensitive composition;
(b) imagewise exposing the photosensitive composition to sufficient activating energy at a wavelength of 193 nm to cause the photosensitive compound to generate sufficient acid to decompose the polymer in the imagewise exposed areas of the photosensitive composition;
(c) developing the photosensitive composition to thereby remove the exposed nonimage areas and leaving the unexposed image areas of the photosensitive composition;
(d) irradiating the image areas of the photosensitive composition to sufficient electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant. - View Dependent Claims (28)
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Specification