Modification of 193 nm sensitive photoresist materials by electron beam exposure

• US 6,319,655 B1
• Filed: 06/11/1999
• Issued: 11/20/2001
• Est. Priority Date: 06/11/1999
• Status: Expired due to Term

• Current Assignee: Electron Vision Corp (Honeywell International Inc.)
• Original Assignee: Electron Vision Corp (Honeywell International Inc.)
• Inventors: Ross, Matthew, Wong, Selmer
• Primary Examiner(s): Duda, Kathleen
• Application Number:
  US09/330,710
• Time in Patent Office: 893 Days
• Field of Search: 430/270.1, 430/296, 430/329, 430/330, 430/328, 430/311, 430/942, 250/492.2
• US Class Current: 430/311
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: Y10S 430/143 Electron beam

Abstract

A process for increasing the etch resistance of photoresists, especially positive working 193 nm sensitive photoresists which are suitable for use in the production of microelectronic devices such as integrated circuits. A 193 nm photosensitive composition is coated onto a substrate, exposed to activating energy at a wavelength of 193 nm to decompose the polymer in the imagewise exposed areas; and developed to remove the exposed nonimage areas. Then the image areas are exposed to sufficient electron beam radiation to increase the resistance of the image areas to an etchant.

Claims

1. A process for producing an etch resistant image which comprises:

(a) coating and drying a photosensitive composition onto a substrate, which photosensitive composition comprises

(i) at least one water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet radiation at a wavelength of about 193 nm, wherein said polymer is present in the photosensitive composition in an amount sufficient to form a uniform film of the composition components when it is coated on a substrate and dried;

(ii) at least one photosensitive compound capable of generating an acid upon exposure to sufficient activating energy at a wavelength of about 193 nm, said photosensitive compound being present in an amount sufficient to substantially uniformly photosensitize the photosensitive composition;

(b) imagewise exposing the photosensitive composition to sufficient activating energy at a wavelength of 193 nm to cause the photosensitive compound to generate sufficient acid to decompose the polymer in the imagewise exposed areas of the photosensitive composition;

(c) developing the photosensitive composition to thereby remove the exposed nonimage areas and leaving the unexposed image areas of the photosensitive composition;

(d) irradiating the image areas of the photosensitive composition to sufficient electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant.

2. The process of claim 1 wherein the polymer comprises an olefin, an acrylate, a methacrylate, a norbornene containing polymer, an alicyclic polymer or combinations thereof.

3. The process of claim 1 wherein the polymer comprises a polyalkylacrylate or a polyalkylmethacrylate.

4. The process of claim 1 wherein the polymer has a molecular weight in the range of from about 1,000 to about 800,000.

5. The process of claim 1 wherein the photosensitive compound comprises an onium compound.

6. The process of claim 1 wherein the photosensitive compound comprises a sulfonium, iodonium or diazonium compound.

7. The process of claim 1 wherein the substrate is selected from the group consisting of silicon, aluminum, lithium niobate, polymeric resins, silicon dioxide, doped silicon dioxide, gallium arsenide, Group III/V compounds, silicon nitride, tantalum, copper, polysilicon, ceramics and aluminum/copper mixtures.

8. The process of claim 1 wherein the exposing is conducted with an ArF laser.

9. The process of claim 1 wherein the exposing is conducted with an ArF laser at an exposure dose of from about 1 mJ/cm² to about 10 mJ/cm².

10. The process of claim 1 wherein the photosensitive composition further comprises one or more residual solvents selected from the group consisting of propylene glycol alkyl ether, butyl acetate, ethylene glycol monoethyl ether acetate, diglyme, cyclopentanone and propylene glycol methyl ether acetate.

11. The process of claim 1 wherein said polymer is present in the photosensitive composition in an amount of from about 50% to about 99%, and the photosensitive compound is present in an amount of from about 1% to about 20% based on the weight of the non-solvent parts of the photosensitive composition.

12. The process of claim 1 wherein the photosensitive composition further comprises one or more components selected from the group consisting of non-aromatic colorants, dyes, anti-striation agents, leveling agents, crosslinkers, plasticizers, adhesion promoters, speed enhancers, solvents, dissolution inhibitors, acid generators and surfactants.

13. The process of claim 1 wherein the developing is conducted with an aqueous alkaline solution.

14. The process of claim 1 wherein the developing is conducted with a metal ion free aqueous alkaline solution.

15. The process of claim 1 wherein the developing is conducted with an aqueous alkaline solution comprising sodium hydroxide, potassium hydroxide, tetramethyl ammonium hydroxide or mixtures thereof.

16. The process of claim 1 wherein the electron beam irradiating is conducted with a uniform, large-area, overall electron beam exposure source which simultaneously exposes substantially all of the image areas of the photosensitive composition simultaneously.

17. The process of claim 1 wherein the electron beam irradiating is conducted with a uniform large-area electron beam source which covers an exposure area of from about 4 square inches to about 256 square inches simultaneously.

18. The process of claim 1 wherein the electron beam irradiating is conducted with a source which generates an electron beam energy level ranging from about 0.5 to about 30 KeV.

19. The process of claim 1 wherein the electron beam irradiating is from a source which generates an electron dose ranging from about 1 to about 500,000 μ

C/².

20. The process of claim 1 wherein the electron beam irradiating is conducted from a source which generates an electron beam current of from about 1 to about 150 mA.

21. The process of claim 1 wherein the electron beam irradiating is conducted while heating the substrate to a temperature of from about 20°

C. to about 450°

C.

22. The process of claim 1 wherein the electron beam irradiating is conducted in a gas selected from the group consisting of nitrogen, oxygen, hydrogen, argon, xenon, helium, ammonia, silane, a blend of hydrogen and nitrogen, ammonia and mixtures thereof.

23. The process of claim 1 wherein the electron beam irradiating is conducted while the substrate is under a vacuum maintained in the range of from about 10⁻

5 to about 10² torr.

24. The process of claim 1 further comprising the step of heating the imagewise exposed photosensitive composition prior to developing, for a sufficient time and temperature to increase the rate at which the acid decomposes the polymer in the imagewise exposed areas of the photosensitive composition.

25. A process for producing a microelectronic device image which comprises:

(a) coating and drying a photosensitive composition onto a semiconductor substrate, which photosensitive composition comprises

(i) at least one water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet radiation at a wavelength of about 193 nm, wherein said polymer is present in the photosensitive composition in an amount sufficient to form a uniform film of the composition components when it is coated on a substrate and dried;

(ii) at least one photosensitive compound capable of generating an acid upon exposure to sufficient activating energy at a wavelength of about 193 nm, said photosensitive compound being present in an amount sufficient to substantially uniformly photosensitize the photosensitive composition;

(b) imagewise exposing the photosensitive composition to sufficient activating energy at a wavelength of 193 nm to cause the photosensitive compound to generate sufficient acid to decompose the polymer in the imagewise exposed areas of the photosensitive composition;

(c) developing the photosensitive composition to thereby remove the exposed nonimage areas and leaving the unexposed image areas of the photosensitive composition;

(d) irradiating the image areas of the photosensitive composition to sufficient electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant.

26. The process of claim 25 further comprising the step of heating the imagewise exposing the photosensitive composition prior to developing, for a sufficient time and temperature to increase the rate at which the acid decomposes the polymer in the imagewise exposed areas of the photosensitive composition.

27. A microelectronic device image produced by a process which comprises:

(a) coating and drying a photosensitive composition onto a semiconductor substrate, which photosensitive composition comprises

(i) at least one water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet radiation at a wavelength of about 193 nm, wherein said polymer is present in the photosensitive composition in an amount sufficient to form a uniform film of the composition components when it is coated on a substrate and dried;

(ii) at least one photosensitive compound capable of generating an acid upon exposure to sufficient activating energy at a wavelength of about 193 nm, said photosensitive compound being present in an amount sufficient to substantially uniformly photosensitive the photosensitive composition;

(b) imagewise exposing the photosensitive composition to sufficient activating energy at a wavelength of 193 nm to cause the photosensitive compound to generate sufficient acid to decompose the polymer in the imagewise exposed areas of the photosensitive composition;

(c) developing the photosensitive composition to thereby remove the exposed nonimage areas and leaving the unexposed image areas of the photosensitive composition;

(d) irradiating the image areas of the photosensitive composition to sufficient electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant.

28. The microelectronic device image produced by the process of claim 27 which further comprises the step of heating the imagewise exposing the photosensitive composition prior to developing, for a sufficient time and temperature to increase the rate at which the acid decomposes the polymer in the imagewise exposed areas of the photosensitive composition.