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Method of forming nitride based semiconductor layer

  • US 6,319,742 B1
  • Filed: 07/27/1999
  • Issued: 11/20/2001
  • Est. Priority Date: 07/29/1998
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a semiconductor device, comprising the steps of:

  • forming a first nitride based semiconductor layer containing at least one of boron, gallium, aluminum and indium on an insulating substrate;

    forming an insulating film in a region on said first nitride based semiconductor layer;

    forming a second nitride based semiconductor layer containing at least one of boron, gallium, aluminum and indium using epitaxial lateral overgrowth on said first nitride based semiconductor layer and said insulating film;

    removing said second nitride based semiconductor layer except in a region on said insulating film;

    joining the top surface of said second nitride based semiconductor layer on said insulating film to one surface of a gallium arsenide substrate through a first electrode layer;

    removing said insulating film, to remove said insulating substrate and said nitride based semiconductor layer from said second nitride based semiconductor layer; and

    forming a second electrode layer on said second nitride based semiconductor layer.

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