Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
First Claim
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1. A device comprisinga substrate;
- an AlxGayInzN structure including an n-type layer, a p-type layer, and an active region positioned proximate to the substrate;
a first mirror stack, interposing the substrate and a bottom side of the AlxGayInzN structure, said first mirror stack selected from the group consisting of dielectric distributed Bragg reflectors and composite distributed Bragg reflectors;
a wafer bonded interface, interposing the first mirror stack and a selected one of the substrate and AlxGayInzN structure, having a bonding temperature; and
a p contact and an n contact, the p contact electrically connected to the p-type layer, the n contact electrically connected to the n-type layer.
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Abstract
Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
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Citations
22 Claims
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1. A device comprising
a substrate; -
an AlxGayInzN structure including an n-type layer, a p-type layer, and an active region positioned proximate to the substrate;
a first mirror stack, interposing the substrate and a bottom side of the AlxGayInzN structure, said first mirror stack selected from the group consisting of dielectric distributed Bragg reflectors and composite distributed Bragg reflectors;
a wafer bonded interface, interposing the first mirror stack and a selected one of the substrate and AlxGayInzN structure, having a bonding temperature; and
a p contact and an n contact, the p contact electrically connected to the p-type layer, the n contact electrically connected to the n-type layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A device comprising
a substrate; -
an AlxGayInzN structure including an n-type layer, a p-type layer, and an active region positioned proximate to the substrate;
a first mirror stack, interposing the substrate and a bottom side of the AlxGayInzN structure;
a wafer bonded interface, interposing the first mirror stack and the AlxGayInzN structure, having a bonding temperature; and
a p contact and an n contact, the p contact electrically connected to the p-type layer, the n contact electrically connected to the n-type layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
at least one intermediate bonding layer, adjacent the wafer bonded interface;
wherein at least one of the intermediate bonding layer and the substrate is selected to be compliant.
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14. A device, as defined in claim 13, wherein the AlxGayInzN structure is included in a vertical cavity optoelectronic structure.
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15. A device, as defined in claim 13, wherein the substrate is compliant and is selected from the group consisting of gallium phosphide (GaP), gallium arsenide (GaAs), indium phosphide (InP), and silicon (Si).
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16. A device, as defined in claim 13, wherein the intermediate bonding layer is compliant and selected from the group consisting of dielectrics and alloys containing halides, ZnO, indium, tin, chrome (Cr), gold, nickel, and copper, and II-VI materials.
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17. A device, as defined in claim 13, further comprising a second mirror stack positioned adjacent a top side of the AlxGayInzN structure.
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18. A device, as defined in claim 17, wherein at least one of the first and second mirror stacks is selected from the group consisting of dielectric distributed Bragg reflectors and composite distributed Bragg reflectors.
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19. A device, as defined in claim 12, further comprising a second mirror stack positioned adjacent the AlxGayInzN structure.
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20. A device, as defined claim 19, wherein at least one of the first and second mirror stacks is selected from the group consisting of dielectric distributed Bragg reflectors and composite distributed Bragg reflectors.
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21. A device, as defined in claim 12, wherein the substrate is compliant and is selected from the group consisting of gallium phosphide (GaP), gallium arsenide (GaAs), indium phosphide (InP), and silicon (Si).
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22. A device, as defined in claim 12, wherein the AlxGayInzN structure is included in a vertical cavity optoelectronic structure.
Specification