Method and apparatus for producing uniform process rates
First Claim
1. A plasma processing apparatus for processing a substrate with a plasma, comprising:
- a first RF power source having a first RF frequency;
a process chamber;
a substantially circular antenna operatively coupled to said first RF power source and disposed above a plane defined by said substrate when said substrate is disposed within said process chamber for said processing, said substantially circular antenna being configured to induce an electric field inside said process chamber with a first RF energy generated by said first RF power source, said substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane, said first pair of concentric loops and said second pair of concentric loops being substantially identical and symmetrically aligned with one another, said substantially circular antenna forming an azimuthally symmetric plasma inside said process chamber; and
a coupling window disposed between said antenna and said process chamber, said coupling window being configured to allow the passage of said first RF energy from said antenna to the interior of said process chamber, said coupling window having a first layer and a second layer, said second layer being configured to substantially suppress the capacitive coupling formed between said substantially circular antenna and said plasma, said substantially circular antenna and said coupling window working together to produce a substantially uniform process rate across the surface of said substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.
-
Citations
40 Claims
-
1. A plasma processing apparatus for processing a substrate with a plasma, comprising:
-
a first RF power source having a first RF frequency;
a process chamber;
a substantially circular antenna operatively coupled to said first RF power source and disposed above a plane defined by said substrate when said substrate is disposed within said process chamber for said processing, said substantially circular antenna being configured to induce an electric field inside said process chamber with a first RF energy generated by said first RF power source, said substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane, said first pair of concentric loops and said second pair of concentric loops being substantially identical and symmetrically aligned with one another, said substantially circular antenna forming an azimuthally symmetric plasma inside said process chamber; and
a coupling window disposed between said antenna and said process chamber, said coupling window being configured to allow the passage of said first RF energy from said antenna to the interior of said process chamber, said coupling window having a first layer and a second layer, said second layer being configured to substantially suppress the capacitive coupling formed between said substantially circular antenna and said plasma, said substantially circular antenna and said coupling window working together to produce a substantially uniform process rate across the surface of said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
-
20. An antenna arrangement for generating an electric field inside a process chamber, said antenna arrangement comprising:
-
a first loop disposed around an antenna axis;
a second loop coupled to said first loop, said second loop having a geometry that is substantially similar to a geometry of said first loop, said second loop being disposed below said first loop and around said antenna axis such that said first and second loops are symmetrically aligned relative to said antenna axis, said first and second loops being arranged to carry a current therethrough, wherein each of the loops are arranged to the flow current in the same direction around said antenna axis. - View Dependent Claims (21, 31, 32, 33, 34, 35, 36, 37, 38, 39)
-
-
22. A coupling window arrangement for processing a substrate with a plasma inside a process chamber, said coupling window being disposed between an antenna and said process chamber, said antenna being configured for generating RF energy, said generating forming capacitive coupling between said antenna and said plasma, said coupling window arrangement comprising:
-
a first layer being formed from a dielectric material; and
a second layer bonded to said first layer, said second layer being formed from a material that is substantially resistant to said plasma present within said process chamber during said processing, said second layer forming part of the inner peripheral surface of said process chamber, said first layer and said second layer being, configured to allow the passage of said RF energy from said antenna to the interior of said process chamber. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30)
-
-
40. A plasma processing apparatus for processing a substrate, comprising:
-
a process chamber in which a plasma is both ignited and sustained for said processing;
a multi-layered antenna configured to produce an electric field via RF energy inside said process chamber, said antenna having a top loop and a bottom loop, which are substantially similar to one another, and which are symmetrically aligned relative to an antenna axis; and
a multi-layered window configured to allow the passage of said RF energy from said antenna to said process chamber, said window having a first layer and a second layer, said second layer being arranged to suppress capacitive coupling, which may occur between said plasma and said antenna.
-
Specification