Interconnection device for low and high current stress electromigration and correlation study

• US 6,320,391 B1
• Filed: 05/08/1998
• Issued: 11/20/2001
• Est. Priority Date: 05/08/1998
• Status: Expired due to Fees

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Bui, Nguyen D.
• Primary Examiner(s): BROWN, GLENN WARNER
• Application Number:
  US09/076,219
• Time in Patent Office: 1,292 Days
• Field of Search: 324/525, 324/531, 324/537, 324/760, 324/713, 324/715, 324/718, 324/719
• US Class Current: 324/537
• CPC Class Codes: G01R 31/2853 Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections G01R31/31717 takes precedence; test of chip-to-PCB or lead-to-PCB connections G01R31/66
• CPC Class Codes: G01R 31/2884 using dedicated test connectors, test elements or test circuits on the IC under test G01R31/2855 takes precedence

Abstract

An interconnection test structure for evaluating more accurately and reliably electromigration characteristics is provided. The test structure includes an elongated metal test conductor having a first end and a second end, small extension metal conductors connected to the first end and the second end of the test conductor, and a plurality of vias disposed in the small extension metal conductors adjacent the first end and the second end of the test conductor. As a result, the current density of the plurality of vias is made to be less than the current density of the test conductor.

Claims

1. An interconnection test structure using high stress current for evaluating more accurately and reliably electromigration characteristics, said test structure comprising:

an elongated metal test conductor having a first end and a second end;

small extension metal conductors connected to said first end and said second end of said test conductor, said first end and said second end of said test conductor extending outwardly towards said respective extension metal conductors; and

a plurality of vias being disposed in said small extension metal conductors adjacent said first end and said second end of said test conductor so as to cause the current density of said plurality of vias to be less than the current density of said test conductor,

whereby failure of the test conductor due to electromigration will occur before failure of the vias due to the electromigration.

2. An interconnection test structure as claimed in claim 1, wherein said test conductor has a length of approximately 800 μ

m and a width of about 0.5 μ

m.

3. An interconnection test structure as claimed in claim 1, wherein the area of said test conductor is less than the total area of said plurality of vias.

4. An interconnection test structure as claimed in claim 3, wherein each of said plurality of vias is of a rectangular shape in its construction.

5. An interconnection test structure as claimed in claim 3, wherein each of said plurality of vias is of a square shape in its construction.

6. An interconnection test structure as claimed in claim 3, wherein each of said plurality of vias is of a circular shape in its construction.

7. An interconnection test structure as claimed in claim 1, wherein said vias are located in said small extension metal conductors adjacent said first and second ends of said test conductor and are aligned longitudinally to be co-linear to said test conductor.

8. An interconnection test structure as claimed in claim 1, wherein said vias are located in said small extension metal conductors adjacent the first and second ends of said test conductor and are aligned vertically so as to be perpendicular to said test conductor.

9. An interconnection test structure as claimed in claim 1, wherein said plurality of vias extend outwardly from the first and second ends of said test conductor and flare outwardly into said extension conductors in a triangular pattern.

10. An interconnection test structure as claimed in claim 1, further comprising means for applying an electrical current through said test conductor via said extension metal conductors.

11. An interconnection test structure as claimed in claim 10, wherein said electrical current has a current density in the range of 10 mA/μ

m² to 100 mA/μ

m².

12. An interconnection test structure as claimed in claim 11, wherein said current density is approximately 50 mA/μ

m².

13. An interconnection test structure as claimed in claim 12, further comprising means for measuring resistance of said test conductor after the application of the electrical current.

14. An interconnection test structure as claimed in claim 1, wherein said test conductor is made of an aluminum material.

15. An interconnection test structure as claimed in claim 1, wherein said test conductor is formed of an aluminum-alloy material.