Flexible high performance microbolometer detector material fabricated via controlled ion beam sputter deposition process

• US 6,322,670 B2
• Filed: 12/31/1996
• Issued: 11/27/2001
• Est. Priority Date: 12/31/1996
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell International Inc.
• Inventors: Cole, Barrett E., Zins, Christopher J.
• Primary Examiner(s): Nelson, Peter A.
• Application Number:
  US08/770,894
• Publication Number:
  US 20010035341A1
• Time in Patent Office: 1,792 Days
• Field of Search: 204/157.41, 250/334, 250/492.21, 11/538
• US Class Current: 204/157.41
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium
• CPC Class Codes: C23C 14/46 by ion beam produced by an external ion source
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Abstract

A microbolometer film material VOx having a value such that the thermal coefficient of resistance is between 0.005 and 0.05. The film material may be formed on a wafer. The VOx material properties can be changed or modified by controlling certain parameters in the ion beam sputter deposition environment. There is sufficient control of the oxidation process to permit non-stoichometric formation of VOx films. The process is a low temperature process (less than 100 degrees C.). Argon is used for sputtering a target of vanadium in an environment wherein the oxygen level is controlled to determine the x of VOx. The thickness of the film is controlled by the time of the deposition. Other layers may be deposited as needed to form pixels for a bolometer array.

Claims

1. A method for depositing flexible high performance microbolometer detector material comprising:

loading at least one wafer into a chamber;

pumping down the chamber to a vacuum;

setting a flow of argon into the chamber at a certain rate;

calibrating a residual gas analyzer (RGA) so that the RGA can detect a spectrum of species of gases;

setting the flow of argon gas for an ion gun wherein the argon is a sputtering gas;

positioning a target of vanadium proximate to the ion gun;

presputtering the target of vanadium;

set a flow of oxygen into the chamber for presputtering;

set the flow of oxygen into the chamber to a level that is adjusted at least partially with an RGA indication;

activating ion gun to sputter with argon ions, vanadium atoms off of the vanadium target which combine with a certain portion of oxygen atoms in deposition on the at least one wafer, the portion of oxygen atoms determined by a setting of the flow of oxygen into the chamber; and

setting a timer for determining the duration of the deposition to attain a certain thickness of deposited material on the at least one wafer.

2. The method of claim 1 wherein the deposited material is VOx where x is a value such that a thermal coefficient of resistance (TCR) is between 0.005 and 0.05.

3. The method of claim 2 wherein VOx has a log of conductivity between zero and three.

4. The method for depositing flexible high performance microbolometer detector material, comprising:

loading at least one wafer into a chamber;

pumping down the chamber to a vacuum;

setting a flow of an inert gas into the chamber at a certain rate;

calibrating a residual gas analyzer (RGA) so that the RGA can detect a spectrum of species of gases;

setting the flow of the inert gas for an ion gun wherein the inert gas is a sputtering gas;

positioning a target of vanadium proximate to the ion gun;

presputtering the target of vanadium;

setting a flow of oxygen into the chamber for presputtering; and

activating the ion gun to sputter vanadium atoms of the vanadium target which combine with a certain portion of oxygen atoms in deposition on the least one wafer, the portion of oxygen atoms determined by a setting of the flow of oxygen into the chamber.

5. The method of claim 4, wherein the inert gas is selected from group VIII of the periodic table of elements.

6. The method of claim 4, wherein the inert gas is argon.

7. The method of claim 4, wherein the inert gas is xenon.

8. The method of claim 5, wherein:

the deposited material is VOx; and

x is a value such that a thermal coefficient of resistance is between 0.005 and 0.05.

9. The method of claim 8, wherein the VOx has a log of conductivity between zero and three.