Dual floating gate programmable read only memory cell structure and method for its fabrication an operation

• US 6,323,088 B1
• Filed: 08/29/2000
• Issued: 11/27/2001
• Est. Priority Date: 04/08/1998
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Gonzalez, Fernando, Bensistant, Francis L.
• Primary Examiner(s): MAI, SON LUU
• Application Number:
  US09/650,078
• Time in Patent Office: 455 Days
• Field of Search: 438/257, 438/264, 438/266, 438/267, 257/315, 257/316
• US Class Current: 438/257
• CPC Class Codes: G11C 11/5621 using charge storage in a floating gate
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 11/5642 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 16/0458 comprising two or more independent floating gates which store independent data
• CPC Class Codes: G11C 16/0475 comprising two or more independent storage sites which store independent data
• CPC Class Codes: G11C 2211/5612 Multilevel memory cell with more than one floating gate
• CPC Class Codes: H01L 29/66825 with a floating gate H01L29/6684 takes precedence
• CPC Class Codes: H01L 29/7887 Programmable transistors with more than two possible different levels of programmation

Abstract

A flash memory cell in the form of a transistor capable of storing multi-bit binary data is disclosed. A pair of floating gates are provided beneath a control gate. The control gate is connected to a word line while active doped regions (source and drain regions) are connected to respective digit lines. The floating gates are separately charged and read out by controlling voltages applied to the word line and digit lines. The read out charges are decoded into a multi-bit binary value. One or both of the floating gates has a side insulator which connects through a conductor to an associated active doped region thereby forming a capacitor across the side insulator between the floating gate. This capacitor and active region facilitates operation of the transistor as a flash memory cell. Methods of fabricating the memory cell and operating it are also disclosed.

Claims

1. A method of forming a memory cell comprising the steps of:

forming a first floating gate region on a silicon substrate;

forming a second floating gate region on said silicon substrate;

said second floating gate region being adjacent to and electrically isolated from said first floating gate region;

forming a sidewall insulator on at least one of said first and second floating gate regions;

forming an insulating layer over said first and second floating gate regions;

forming a control gate region over said insulating layer and over said first and second floating gate regions;

forming active doped regions in said substrate such that said first and second floating gate regions are located at least in part between said active doped regions; and

forming electrical interconnects with said active doped and control gate regions, at least one of the electrical interconnects to an active doped region also connecting with said sidewall insulator.

2. A method as in claim 1, wherein said electrical interconnects include a first digit line connected with one of said active doped regions, a second digit line connected to the other of said active doped regions, and a row line connected to said control gate region.

3. A method as in claim 1, further comprising the step of placing an insulating region between said first and second floating gate regions, said first and second floating gate regions being adjacent each other but separated by said insulating region.

4. A method as in claim 1, wherein said first and second floating gate regions are spaced from one another, said method further comprising the steps of providing an insulating layer on the tops and the side edges of said first and second floating gate regions which face one another, and wherein said gate control region is additionally formed between the side edges of said first and second floating gate regions which face one another.

5. A method as in claim 1, further comprising the steps of forming a field oxide isolating region around said memory cell to isolate said memory cell from adjacent memory cells in said substrate.

6. A method as in claim 1, further comprising the steps of forming an array of said memory cells on said silicon substrate.

7. A method as in claim 1, wherein said memory cell is a memory cell of a flash memory array.

8. A method of forming a memory cell, the method comprising:

forming a first insulator layer on said silicon substrate;

forming a first floating gate region on said first insulator layer;

forming a second floating gate region adjacent to said first floating gate region and electrically isolated from said first floating gate region;

forming a second insulator layer over said first and second floating gate regions and on at least one sidewall of said first floating gate region;

forming a gate control region over said second insulator layer and over said first and second floating gate regions;

forming active doped regions in said substrate such that said first floating gate region is located at least in part between said active doped regions; and

forming respective electrical interconnects with said active doped regions and control gate region;

at least one of the electrical interconnects for one of said active doped regions being electrically connected with said second insulator layer to form a capacitor between said first floating gate region and said one active doped region through said second insulator layer.

9. A method as in claim 8, wherein said electrical interconnects include a first digit line connected with one of said active doped regions, a second digit line connected to the other of said active doped regions, and a row line connected to said control gate region.

10. A method as in claim 8, further comprising the steps of forming an array of said memory cells on said silicon substrate.

11. A method as in claim 8, wherein said memory cell is a memory cell of a flash memory array.

12. The method of claim 8 further comprising:

removing said second insulator from said at least one sidewall of said first floating gate region; and

forming a third insulator layer on said at least one sidewall of said first floating gate region.