Use of silicon oxynitride ARC for metal layers
DC CAFCFirst Claim
1. A method of forming a silicon oxynitride antireflection coating over a metal layer, comprising:
- providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate;
depositing a silicon oxynitride layer on the metal layer having a thickness from about 100 Å
to about 1500 Å
; and
forming an oxide layer having a thickness from about 5 Å
to about 50 Å
over the silicon oxynitride layer to provide the silicon oxynitride antireflection coating, wherein the oxide layer forms a barrier to migration of nitrogen atoms from the silicon oxynitride layer.
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Litigations
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Accused Products
Abstract
In one embodiment, the present invention relates to a method of forming a silicon oxynitride antireflection coating over a metal layer, involving the steps of providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate; depositing a silicon oxynitride layer over the metal layer having a thickness from about 100 Å to about 150 Å; and forming an oxide layer having a thickness from about 5 Å to about 50 Å over the silicon oxynitride layer to provide the silicon oxynitride antireflection coating. In another embodiment, the present invention relates to a method of reducing an apparent reflectivity of a metal layer having a first reflectivity in a semiconductor structure, involing forming a silicon oxynitride antireflection coating over the metal layer; wherein the silicon oxynitride antireflection coating formed over the metal layer has a second reflectivity and is formed by depositing silicon oxynitride on the metal layer by chemical vapor deposition and forming an oxide layer over the oxynitride, and the difference between the first reflectivity and the second reflectivity is at least about 60%.
34 Citations
20 Claims
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1. A method of forming a silicon oxynitride antireflection coating over a metal layer, comprising:
-
providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate;
depositing a silicon oxynitride layer on the metal layer having a thickness from about 100 Å
to about 1500 Å
; and
forming an oxide layer having a thickness from about 5 Å
to about 50 Å
over the silicon oxynitride layer to provide the silicon oxynitride antireflection coating,wherein the oxide layer forms a barrier to migration of nitrogen atoms from the silicon oxynitride layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of reducing an apparent reflectivity of a metal layer having a first reflectivity in a semiconductor structure, comprising forming a silicon oxynitride antireflection coating on the metal layer;
- wherein the silicon oxynitride antireflection coating formed over the metal layer has a second reflectivity and is formed by depositing silicon oxynitride on the metal layer by chemical vapor deposition and forming an oxide layer having a thickness from about 5 Å
to about 50 Å
over the silicon oxynitride, and the difference between the first reflectivity and the second reflectivity is at least about 60%,wherein the oxide layer forms a barrier to migration of nitrogen atoms from the silicon oxynitride layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
- wherein the silicon oxynitride antireflection coating formed over the metal layer has a second reflectivity and is formed by depositing silicon oxynitride on the metal layer by chemical vapor deposition and forming an oxide layer having a thickness from about 5 Å
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15. A method of processing a semiconductor substrate, comprising:
-
providing a semiconductor substrate comprising a metal layer having a reflectivity of at least 80%;
forming a silicon oxynitride antireflection coating on the metal layer having a thickness from about 100 Å
to about 1500 Å
, the silicon oxynitride antireflection coating comprising an oxide layer having a thickness from about 5 Å
to about 50 Å
over a silicon oxynitride layer;
depositing a deep ultraviolet photoresist over the silicon oxynitride antireflection coating;
selectively irradiating the deep ultraviolet photoresist with electromagnetic radiation having a wavelength of about 248 nm or less; and
developing the deep ultraviolet photoresist, wherein the oxide layer forms a barrier to migration of nitrogen atoms from the silicon oxynitride layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification