Methods, complexes, and system for forming metal-containing films

• US 6,326,505 B1
• Filed: 05/11/1999
• Issued: 12/04/2001
• Est. Priority Date: 10/02/1996
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Vaartstra, Brian A.
• Primary Examiner(s): NAZARIO GONZALEZ, PORFIRIO
• Application Number:
  US09/309,825
• Time in Patent Office: 938 Days
• Field of Search: 556/1, 556/175, 556/176, 438/681, 427/248.1
• US Class Current: 556/1
• CPC Class Codes: C07F 5/00 Compounds containing elements of Groups 3 or 13 of the Periodic Table
• CPC Class Codes: C07F 5/065 compounds with an Al-H linkage
• CPC Class Codes: C07F 5/066 compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/301 AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A method of forming a film on a substrate using Group III metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Claims

1. A hydride complex of the formula:

2. The complex of claim 1 wherein M is selected from the group consisting of Al, Ga, and In.

3. The complex of claim 1 wherein each R¹, R², R³, and R⁴ group is independently H or a (C₁-C₂₀) hydrocarbon group.

4. The complex of claim 1 wherein each R¹, R², R³, and R⁴ group is independently H or a (C₁-C₄)alkyl moiety.

5. The complex of claim 1 wherein M is Al.

6. The complex of claim 1 wherein R¹, R³, and R⁴ are each H, and R² is methyl.

7. The complex of claim 5 wherein R¹ and R³ are each H, and R² and R⁴ are each methyl.

8. The complex of claim 1 wherein M is Ga.

9. The complex of claim 8 wherein R¹, R³, and R⁴ are each H, and R² is methyl.

10. The complex of claim 8 wherein R¹ and R³ are each H, and R² and R⁴ are each methyl.

11. The complex of claim 1 wherein M is In.

12. The complex of claim 11 wherein R¹, R³, and R⁴ are each H, and R² is methyl.

13. The complex of claim 11 wherein R¹ and R³ are each H, and R² and R⁴ are each methyl.