Temperature control system for process chamber

• US 6,326,597 B1
• Filed: 04/15/1999
• Issued: 12/04/2001
• Est. Priority Date: 04/15/1999
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Chen, Jerry C, Dʼambra, Allen I., Fuentes, Victor H, Floyd, Edward L, Hoffman, Daniel J, Liang, Qiwei, Lubomirsky, Dmitry, Yavelberg, Simon
• Primary Examiner(s): PASCHALL, MARK H
• Application Number:
  US09/292,726
• Time in Patent Office: 964 Days
• Field of Search: 219/497, 219/121.4, 219/121.41, 219/121.43, 219/121.52, 219/121.51, 118/724, 118/725, 118/723.I, 118/723.R, 156/345, 156/646.1
• US Class Current: 219/494
• CPC Class Codes: H01L 21/67248 Temperature monitoring

Abstract

Temperature control of a process chamber 25 is achieved by directing a flow of gas at an external surface 100 of the chamber 25. In one aspect, gas directed at the chamber 25 passes through a gas flow amplifier 115 that increases the gas flow. Gas for the temperature control can be drawn in from the ambient air and, after passing over the process chamber 25, the gas can flow out through an outlet 150. Data is presented demonstrating superior temperature control performance over a conventional system.

Claims

1. A temperature control system for controlling a temperature of a surface of an enclosure wall of a process chamber adapted to process a substrate, the temperature control system comprising a gas flow amplifier having a nozzle adapted to emit a gas flow stream that is directed toward the surface of the enclosure wall of the process chamber to control the temperature of the surface.

2. A temperature control system according to claim 1 wherein the gas flow amplifier is adapted to amplify the gas flow stream directed toward the surface of the enclosure wall of the process chamber.

3. A temperature control system according to claim 1 wherein the gas flow amplifier is adapted to direct a primary gas stream toward the surface of the enclosure wall of the process chamber thereby entraining a secondary gas stream also toward the surface of the enclosure wall of the process chamber, the primary gas stream comprising a volumetric flow rate that is lower than the volumetric flow rate of the secondary gas stream.

4. A temperature control system according to claim 3 wherein the secondary gas stream flows into an inlet and out of an outlet of the gas flow amplifier.

5. A temperature control system according to claim 1 comprising a reservoir of pressurized gas connected to the nozzle.

6. A temperature control system according to claim 5 wherein the gas flow amplifier comprises an inlet to receive gas and an outlet adapted to direct the received gas toward the surface of the enclosure wall of the process chamber, and wherein the nozzle is between the inlet and the outlet.

7. A temperature control system according to claim 6 wherein the nozzle is adapted to direct a primary gas stream toward the surface of the enclosure wall of the process chamber, whereby a secondary gas stream is induced to flow into the inlet and out of the outlet.

8. A temperature control system according to claim 6 wherein the nozzle is adapted to direct the gas flow stream toward the surface of the enclosure wall of the process chamber at at least about sonic velocities.

9. A temperature control system according to claim 1 wherein the nozzle comprises an opening sized from about 0.1 mils to about 50 mils.

10. A temperature control system according to claim 1 wherein the nozzle comprises an annular opening.

11. A temperature control system according to claim 6 wherein the inlet comprises a first diameter and the outlet comprises a second diameter, and wherein the first diameter is smaller than the second diameter.

12. A temperature control system according to claim 6 wherein the gas flow amplifier comprises a substantially conical surface between the inlet and the outlet.

13. A temperature control system according to claim 4 comprising a gas deflector between the outlet of the gas flow amplifier and the surface of the process chamber.

14. A temperature control system according to claim 13 wherein gas deflector comprises an orifice sized to allow at least partial flow of the gas therethrough.

15. A temperature control system according to claim 13 wherein gas deflector comprises a conical surface.

16. A temperature control system according to claim 1 further comprising a housing surrounding at least a portion of the surface of the enclosure wall of the process chamber and substantially enclosing the gas flow amplifier.

17. A temperature control system according to claim 16 wherein the housing comprises one or more vents to an external environment.

18. A temperature control system according to claim 1 wherein the gas flow amplifier further comprises a gas line connector adapted to receive pressurized gas from a pressurized gas source.

19. A temperature control system according to claim 1 wherein the temperature control system is absent a heat exchanger to transfer heat to or from the gas.

20. A substrate processing apparatus comprising:

(a) a process chamber comprising a support adapted to hold a substrate during processing of the substrate, the process chamber having a wall with a surface;

(b) a housing surrounding at least a portion of the surface of the wall of the process chamber; and

(c) a gas flow amplifier between the housing and the surface of the wall of the process chamber, the gas flow amplifier having a nozzle adapted to emit a gas flow stream that is directed toward the surface of the wall to control a temperature of the surface.

21. A substrate processing apparatus according to claim 20 wherein the surface comprises a dome shape.

22. A substrate processing apparatus according to claim 20 wherein the gas flow amplifier is adapted to direct a primary gas stream toward the surface of the wall of the process chamber thereby entraining a secondary gas stream also toward the surface of the wall of the process chamber, the primary gas stream comprising a volumetric flow rate that is lower than the volumetric flow rate of the secondary gas stream.

23. A substrate processing apparatus according to claim 22 wherein the secondary gas stream flows into an inlet and out of an outlet of the gas flow amplifier.

24. A substrate processing apparatus according to claim 20 wherein the gas flow amplifier comprises an inlet to receive gas and an outlet adapted to direct the received gas toward the surface of the wall of the process chamber, and wherein the nozzle is between the inlet and the outlet.

25. A substrate processing apparatus according to claim 20 wherein the nozzle is adapted to direct the gas flow stream toward the surface of the wall of the process chamber at at least about sonic velocities.

26. A substrate processing apparatus according to claim 20 wherein the housing comprises one or more vents to an external environment.

27. A substrate processing apparatus comprising:

(a) a process chamber comprising a support adapted to hold a substrate during processing of the substrate, the chamber having a wall comprising an outside surface;

(b) a housing surrounding at least a portion of the outside surface of the wall of the process chamber, the housing having one or more vents toan external environment; and

(c) a gas flow amplifier in the housing having a nozzle adapted to emit a gas flow stream that is directed against the outside surface of the wall of the process chamber to control a temperature of the outside surface.

28. An apparatus according to claim 27 wherein the vents comprise gas egress ports and gas ingress ports.

29. An apparatus according to claim 28 wherein a gas ingress port is located adjacent to the gas flow amplifier.

30. An apparatus according to claim 28 wherein a gas egress port is located such that the gas flow stream flows past the outside surface of the wall of the process chamber before reaching the gas egress port.

31. An apparatus according to claim 27 wherein the only openings in the housing to the external environment are the vents.

32. An apparatus according to claim 27 wherein the process chamber comprises RF coils disposed around the outside surface.

33. A method of controlling the temperature of a surface of an enclosure wall of a process chamber adapted to process a substrate, the method comprising providing a gas flow amplifier having a nozzle capable of emitting a primary gas stream having a first flow rate and that is directed toward the surface of the enclosure wall to entrain a secondary gas stream to form a combined gas stream having a second flow rate and that is directed toward the surface of the enclosure wall to control the temperature of the surface, wherein the second flow rate is higher than the first flow rate.

34. A method according to claim 33 comprising passing a pressurized gas through an opening sized sufficiently small to provide a primary gas stream having at least about sonic velocities.

35. A method according to claim 33 comprising passing a pressurized gas through an opening sized from about 0.1 mil to about 50 mils.

36. A method according to claim 33 comprising directing the primary gas stream in a circular configuration.

37. A method according to claim 33 comprising directing the primary gas stream through a conical volume.

38. A method according to claim 33 comprising directing the primary gas stream through a conical volume comprising an inlet and an outlet for the secondary gas stream, the inlet comprising a first diameter and the outlet comprising a second diameter, and the first diameter being smaller than the second diameter.

39. A method according to claim 33 comprising at least partially deflecting the secondary gas stream before it reaches the surface.

40. A method according to claim 33 comprising deflecting a portion of the secondary gas stream toward a periphery of the surface and allowing another portion to reach a center of the surface.

41. A method of controlling the temperature of a surface of an enclosure wall of a process chamber adapted to process a substrate, the method comprising providing a gas flow amplifier having a nozzle capable of emitting a first gas stream that is directed toward the surface of the enclosure wall at a velocity that is sufficiently high to entrain the flow of a second gas stream that includes the first gas stream against the surface of the enclosure wall to control the temperature of the surface.

42. A method according to claim 41 comprising directing the first gas stream at a first volumetric flow rate to entrain the flow of a second gas stream at a second volumetric flow rate that is higher than the first volumetric flow rate.

43. A method according to claim 42 wherein the second volumetric flow rate is at least 5 times larger than the first volumetric flow rate.

44. A method according to claim 42 comprising directing the first gas stream at at least about sonic velocities.

45. A plasma processing apparatus capable of processing a substrate, the apparatus comprising:

(a) a process chamber comprising RF coils disposed around an external surface of a wall of the process chamber;

(b) a housing surrounding at least a portion of the external surface of the wall of the process chamber; and

(c) a gas flow amplifier located between the housing and the external surface of the wall of the process chamber, the gas flow amplifier having a nozzle adapted to emit a gas flow stream that is directed toward the external surface of the wall to control the temperature of the external surface.

46. A substrate processing apparatus according to claim 45 wherein the gas flow amplifier is adapted to direct a primary gas stream toward the external surface of the wall of the process chamber thereby entraining a secondary gas stream also toward the external surface of the wall of the process chamber, the primary gas stream comprising a volumetric flow rate that is lower than the volumetric flow rate of the secondary gas stream.

47. A substrate processing apparatus according to claim 46 wherein the secondary gas stream flows into an inlet and out of an outlet of the gas flow amplifier.

48. A substrate processing apparatus according to claim 45 wherein the gas flow amplifier comprises an inlet to receive gas and an outlet adapted to direct the received gas toward the external surface of the wall of the process chamber, and wherein the nozzle is between the inlet and the outlet.

49. A substrate processing apparatus according to claim 45 wherein the nozzle is adapted to direct the gas flow stream toward the external surface of the wall of the process chamber at at least about sonic velocities.

50. A substrate processing apparatus according to claim 45 wherein the housing comprises one or more vents to an external environment.

51. A method of controlling the temperature of a surface of an enclosure wall of a process chamber adapted to process a substrate, the method comprising:

(a) providing a housing surrounding at least a portion of the surface of the enclosure wall, wherein the housing comprises a gas ingress port and a gas egress port;

(b) providing a gas flow amplifier to draw gas into the housing through the gas ingress port and propel the gas onto the surface of the enclosure wall to control the temperature of the surface; and

(c) expelling the gas out of the housing through the gas egress port.

52. The method of claim 51 wherein the method is absent a heat exchanger.

53. The method of claim 52 wherein the process chamber comprises a dome and wherein a portion of the gas impacts directly on a center of the dome and another portion of the gas is directed away from the center and onto the sides of the dome.

54. A method according to claim 51 comprising propelling a primary gas stream toward the surface of the enclosure wall of the process chamber thereby entraining a secondary gas stream also toward the surface of the enclosure wall of the process chamber, the primary gas stream comprising a volumetric flow rate that is lower than the volumetric flow rate of the secondary gas stream.

55. A method according to claim 51 comprising propelling the gas toward the surface of the enclosure wall of the process chamber at at least about sonic velocities.

56. A method of controlling the temperature of a surface of an enclosure wall of a plasma process chamber adapted to process a substrate, the method comprising providing a gas flow amplifier having a nozzle capable of emitting a gas flow stream that is directed toward the surface of the enclosure wall of the plasma process chamber to control the temperature of the surface, wherein the gas flow rate of the gas flow stream is sufficiently high such that if the gas flow stream were directed at the surface of an enclosure wall of a plasma process chamber having a dome with an external base diameter of about 14″

that is warmed by heat lamps, and running a plasma with a source RF power of 1400 W and a bias voltage of about 250 W, the difference in the change of temperature at the center and lower side of the dome'"'"'s surface would be less than about 25°

C.